http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
현승철,오석균,윤상현,김화택,김형곤,최성휴,김창대,윤창선,권숙일,Hyun, Seung-Cheol,Oh, Seok-Kyun,Yun, Sang-Hyun,Kim, Wha-Tek,Kim, Hyung-Gon,Choe, Sung-Hyu,Kim, Chang-Dae,Yoon, Chang-Sun,Kwun, Sook-Il 한국진공학회 1993 Applied Science and Convergence Technology Vol.2 No.2
$SbS_{1-x}Se_xI,\;BiS_{1-x}Se_xI,\;Sb_{1-x}Bi_xSI,\;Sb_{1-x}Bi_xSeI,\;SbS_{1-x}Se_xI:Co,\;BiS_{1-x}Se_xI:Co,\;Sb_{1-x}Bi_xSI:Co$, and $Sb_{1-x}Bi_xSeI:Co$ single crystals were grown by the vertical Bridgman method using the ingots. It has been found that these single crystals have an orthorhombic structure and indirect optical transition. The composition dependences of energy gaps are given by $E_g(x)=E_g(0)-Ax+Bx^2$. The impurity optical absorption peaks due to cobalt deped with impurity are attributed to the electron transitions between the split energy levels of $Co^{2+}$ and $Co^{3+}$ ions sited at $T_d$symmetry of the host lattice.
$Zn_{0.5}Cd_{0.5}Al_{2}Se_{4}$ 및 $Zn_{0.5}Cd_{0.5}Al_{2}Se_{4}$:$Co^{2+}$ 단결정의 광학적 특성과 열역학 함수 추정
현승철,박현,박광호,오석균,김형곤,김남오,Hyun, Seung-Cheol,Park, Hjung,Park, Kwang-Ho,Oh, Seok-Kyun,Kim, Hyung-Gon,Kim, Nam-Oh 대한전기학회 2003 전기학회논문지C Vol.52 No.7
$Zn_{0.5}Cd_{0.5}Al_{2}Se_{4}$ and $Zn_{0.5}Cd_{0.5}Al_{2}Se_{4}$:$Co^{2+}$ single crystals were grown by CTR method. The grown single crystals have defect chalcopyrite structure with lattice constant a=5.5966$\AA$, c=10.8042$\AA$ for the pure, a=5.6543$\AA$, c=10.8205$\AA$ for the Co-doped single crystal, respectively. The optical energy band gap was given as indirect band gap. The optical energy band gap was decreased according to add of Co-impurity Temperature dependence of optical energy band gap was fitted well to the Varshni equation. From this relation, we can deduced the entropy, enthalpy and heat capacity. Also, we can observed the Co-impurity optical absorption peaks assigned to the $Co^{2+}$ ion sited at the $T_{d}$ symmetry lattice and we consider that they were attributed to the electron transitions between energy levels of ions.
현승철(Seung-Cheol Hyun),오석균(Seok-Kyun Oh),윤상현(Sang-Hyun Yun),김화택(Wha-Tek Kim),김형곤(Hyung-Gon Kim),최성휴(Sung-Hyu Choe),김창대(Chang-Dae Kim),윤창선(Chang-Sun Yoon),권숙일(Sook-Il Kwun) 한국진공학회(ASCT) 1993 Applied Science and Convergence Technology Vol.2 No.2
SbS_(1-x)Se_xI, BiS_(1-x)Se_xI, Sb_(1-x)Bi_xSI, Sb_(1-x)Bi_xSel, SbS_(1-x)Se_xI : Co, BiS_(1-x)Se_xI : Co, Sb_(1-x)Bi_xSI : Co, 및Sb_(1-x)Bi_xSeI : Co 단결정을 성장시키기 위하여, 투명석영관내에 고순도의 성분원소 혼합물을 넣고 진공봉입하여 iogot를 합성하였다. 합성된 ingot를 사용하여 수직 Bridgman 방법으로 이들 단결정을 성장시켰다. 성장된 단결정의 구조는 orthorhombic 구조이었고, energy band 구조는 간접전이형으로 주어졌으며, 조성 X에 따른 energy gap의 조성의존성은 E_g(x)=E_g(0)-Ax+BX²으로 주어진다. 불순물로 cobalt를 첨가할 때 나타나는 불순물 광흡수 peak는 모결정의 T_d 대칭점을 갖는 격자점에 첨가한 cobalt 가 Co²+, Co³+ ion으로 위치하고, 이들 ion의 energy 준위들 사이의 전자전이에 의해서 나타남을 확인하였다. SbS_(1-x)Se_xI, BiS_(1-x)Se_xI, Sb_(1-x)Bi_xSI, Sb_(1-x)Bi_xSel, SbS_(1-x)Se_xI : Co, BiS_(1-x)Se_xI : Co, Sb_(1-x)Bi_xSI : Co, and Sb_(1-x)Bi_xSeI : Co single crystals were grown by the vertical Bridgman method using the ingots. It has been found that these single crystals have an orthorhombic structure and indirect optical transition. The composition dependences of energy gaps are given by E_g(x)=E_g(0)-Ax+Bx². The impurity optical absorption peaks due to cobalt doped with impurity are attributed to the electron transitions between the split energy levels of Co²+ and Co³+ ions sited at T_d symmetry of the host lattice.
${\alpha}-In_2S_3:Co^{2+}$ 단결정의 광학적 특성에 관한 연구
박광호,현승철,정진,오석균,Park, Kwang-Ho,Hyun, Seung-Cheol,Jeong, Jin,Oh, Seok-Kyun 한국전기전자재료학회 2008 전기전자재료 Vol.21 No.12
The ${\alpha}-In_2S_3:Co^{2+}$ single crystal with a good quality and stabilized property were gained successfully by the CTR(Chemical Transport Reaction)method. XRD analysis showed that the grown single crystals were cubic structure. The optical absorption spectra of ${\alpha}-In_2S_3:Co^{2+}$ single crystal showed impurity absorption peaks due to cobalt impurity. These impurity absorption pesks were assigned to the ligand transition between the split energy levels of $Co^{2+}$ ions sited in $T_d$ symmetry of these semiconductor host lattice.
오석균,현승철,윤상현,김화택,김형곤,최성휴,윤창선,권숙일,Oh, Seok-Kyun,Hyun, Seung-Cheol,Yun, Sang-Hyun,Kim, Wha-Tek,Kim, Hyung-Gon,Choe, Sung-Hyu,Yoon, Chang-Sun,Kwun, Sook-Il 한국진공학회 1993 Applied Science and Convergence Technology Vol.2 No.2
SbSI : V, SbSeI : V, BiSI : V, BiSeI : V, SbSI : Cr, SbSeI : Cr, BiSI : Cr, BiSeI : Cr, SbSI : Ni, SbSeI : Ni, BiSI : Ni, 및 BiSeI : Ni 단결정을 고순도(99.9999%)의 성분원소에 혼합물을 투명석 영관내에 넣고, $1{\times}10^{-6}mmHg$의 진공에서 봉입하여 합성한 ingot를 사용하여, 수직 Bridgman 방법으로 성장시켰다. 성장된 단결정의 구조는 orthorhombic 구조이며, 광학적 energy band gap 구조는 간접전이형 이었고, energy gap의 온도의존성은 상전이에 관계되는 2개의 변곡점이 나타났으며, 연속된 영역에서는 Varshni 방정식을 만족하였다. 첨가한 3d 불순문(V, Cr, Ni)은 모결정의 $T_d$ 대칭을 갖는 주격자점에 +2가 ion으로 위치하며, 이들 ion의 energy 준위간의 전자전이에 의하여 불순물 광흡수 peak가 나타난다. Single crystals, SbSI : V, SbSeI : V, BiSI : V, BiSeI : V, SbSI : Cr, SbSeI : Cr, BiSI : Cr, BiSeI : Cr, SbSI : Ni, SbSeI : Ni, BiSI : Ni, and BiSeI : Ni were grown by the vertical Bridgman method. It is found that the grown single crystals have an orthorhombic structure and the indirect optical transitions. The temperature dependence of energy gap shows the two reflection point related with the phase transitions and is well fitted with Varshni equation in the continuous region. The optical absorption peaks due to the doped impurities (V, Cr and Ni) are respectively attributed to the electron transitions between the split energy levels of $V^{+2}$, $Cr^{+2}$ and $Ni^{+2}$ ions sited at $T_d$ symmetry of the host lattice.
α-In<sub>2</sub>S<sub>3</sub>:Co<sup>2+</sup> 단결정의 광학적 특성에 관한 연구
박광호,현승철,정진,오석균,Park, Kwang-Ho,Hyun, Seung-Cheol,Jeong, Jin,Oh, Seok-Kyun 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.12
The ${\alpha}-In_2S_3:Co^{2+}$ single crystal with a good quality and stabilized property were gained successfully by the CTR(Chemical Transport Reaction)method. XRD analysis showed that the grown single crystals were cubic structure. The optical absorption spectra of ${\alpha}-In_2S_3:Co^{2+}$ single crystal showed impurity absorption peaks due to cobalt impurity. These impurity absorption pesks were assigned to the ligand transition between the split energy levels of $Co^{2+}$ ions sited in $T_d$ symmetry of these semiconductor host lattice.
김남오,민완기,김형곤,오금곤,현승철,Kim, Nam-oh,Min, Wan-Ki,Kim, Hyung-gon,Oh, Gum-kon,Hyun, Seung-cheol 대한전기학회 2004 전기학회논문지 P Vol.53 No.1
The results of investigations of Ag2Se single crystal are presented. $Ag_2Se$ crystal was grown by the Bridgman method. The $Ag_2Se$ single crystal was an orthorhombic structure with lattice constance $a=4.333{\AA}$, $b=7.062{\AA}$, $c=7.764{\AA}$. Hall effect shows a n-type conductivity in the $Ag_2Se$ single crystal. The electrical resistivity was $1.25{\times}10^3ohm^{-1}^cm{-1}$ and electron mobility was $-5.48{\times}10^3cm^2/V{\cdot}sec$ at room temperature(RT).