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Kim, Kyoung-Han,Kim, Yun Hye,Son, Joe Eun,Lee, Ju Hee,Kim, Sarah,Choe, Min Seon,Moon, Joon Ho,Zhong, Jian,Fu, Kiya,Lenglin, Florine,Yoo, Jeong-Ah,Bilan, Philip J,Klip, Amira,Nagy, Andras,Kim, Jae-Ryon Nature Publishing Group 2017 Cell research Vol.27 No.11
<P>Intermittent fasting (IF), a periodic energy restriction, has been shown to provide health benefits equivalent to prolonged fasting or caloric restriction. However, our understanding of the underlying mechanisms of IF-mediated metabolic benefits is limited. Here we show that isocaloric IF improves metabolic homeostasis against diet-induced obesity and metabolic dysfunction primarily through adipose thermogenesis in mice. IF-induced metabolic benefits require fasting-mediated increases of vascular endothelial growth factor (VEGF) expression in white adipose tissue (WAT). Furthermore, periodic adipose-VEGF overexpression could recapitulate the metabolic improvement of IF in non-fasted animals. Importantly, fasting and adipose-VEGF induce alternative activation of adipose macrophage, which is critical for thermogenesis. Human adipose gene analysis further revealed a positive correlation of adipose VEGF-M2 macrophage-WAT browning axis. The present study uncovers the molecular mechanism of IF-mediated metabolic benefit and suggests that isocaloric IF can be a preventive and therapeutic approach against obesity and metabolic disorders.</P>
GWA meta-analysis of personality in Korean cohorts
Kim, Bo-Hye,Kim, Han-Na,Roh, Seung-Ju,Lee, Mi Kyeong,Yang, Sarah,Lee, Seung Ku,Sung, Yeon-Ah,Chung, Hye Won,Cho, Nam H,Shin, Chol,Sung, Joohon,Kim, Hyung-Lae Springer Science and Business Media LLC 2015 Journal of human genetics Vol.60 No.8
<P>Personality is a determinant of behavior and lifestyle that is associated with health and human diseases. Despite the heritability of personality traits is well established, the understanding of the genetic contribution to personality trait variation is extremely limited. To identify genetic variants associated with each of the five dimensions of personality, we performed a genome-wide association (GWA) meta-analysis of three cohorts, followed by comparison of a family cohort. Personality traits were measured with the Revised NEO Personality Inventory for the five-factor model (FFM) of personality. We investigated the top five single-nucleotide polymorphisms (SNPs) for each trait, and revealed the most highly association with neuroticism and TACC2 (rs1010657, P=8.79 10(-7)), extraversion and PTPN12 (rs12537271, P=1.47 10(-7)), openness and IMPAD1 (rs16921695, P=5 10(-8)), agreeableness and RPS29 (rs8015351, P=1.27 10(-6)) and conscientiousness and LMO4 (rs912765, P=2.91 10(-6)). It had no SNP reached the GWA study threshold (P<5 10(-8)). When expanded the SNPs up to top 100, the correlation of PTPRD (rs1029089) and agreeableness was confirmed in Healthy Twin cohort with other 13 SNPs. This GWA meta-analysis on FFM personality traits is meaningful as it was the first on a non-Caucasian population targeted to FFM of personality traits.</P>
STUDY ON THE EFFECT OF HEAT LOSS IN POST EXPOSURE BAKE PROCESS
Sarah KIM,Do Wan KIM 한국산업응용수학회 2009 한국산업응용수학회 학술대회 논문집 Vol.2009 No.5
In post exposure bake (PEB) process of semiconductor devices production, a shape of critical dimension (CD) could be changed into an inappropriate form by superfluous heating temperature and time of a hot-plate. This is because redundant diffusion of acid can occur from them. In the past, there was little concern about such deformation of CD because the line width of CD that we wanted was relatively thick. However, now we need to control with prudence heating temperature and time of a hot-plate for a thinner line width (ex. sub-32nm) of CD that is used lately. These reasons let us have a desire to start this work. Here we present a mathematical heat conduction model during PEB process for getting suitable heating temperature and time and compute it by using numerical method. Computation of the heat conduction is a very delicate matter, especially because of the multiscale conductivity and thickness of stacked sublayers of the wafer. However, through our method we could markedly reduce the unknowns. Thus, our method brings more cost efficient benefits because we can compute heat transfer only with the averaging interface temperatures which are the reduces unknowns. Also, a system of Volterra-type integral equations for the same number of unknowns could be drived. In other words, we used integral scheme that has several kernels. It is more stable and robust than a difference method. These points could be merits of our work. There are previous works, [1] and [2], on this topic. The previous papers stated that the PEB wafer stack was insulated from the surrounding air temperature. That is, there was no consideration about heat loss. However, in the PEB process, when heat transfer occurs from one layer to another, there must be temperature leakage into the surrounding air. We propose a new numerical algorithm in which effect of heat loss is added. Finally, we obtain the accurate and efficient results including realistic wafer tests. Reliable results are shown for heat conduction to photoresist on top of wafer during PEB process.
Kim, Youngrae,Kim, Sarah Eunkyung The Korean Ceramic Society 2012 한국세라믹학회지 Vol.49 No.5
Nitrogen-incorporated $SnO_2$ thin films were deposited by rf magnetron sputtering. Comparative structural, electrical and optical studies of thin films deposited by sputtering of the Sn metallic target and sputtering of the $SnO_2$ ceramic target were conducted. The $SnO_2$ thin films deposited by sputtering of the Sn metallic target had a higher electrical conductivity due to a higher carrier concentration than those by sputtering of the $SnO_2$ ceramic target. Structurally the $SnO_2$ thin films deposited by sputtering of the $SnO_2$ ceramic target had a better crystallinity and a larger grain size. This study confirmed that there were distinct and clear differences in electrical, structural, and optical characteristics between $SnO_2$ thin films deposited by reactive sputtering of the Sn metallic target and by direct sputtering of the $SnO_2$ ceramic target.
Kim, Cheol,Cho, Seungbum,Kim, Sungdong,Kim, Sarah Eunkyung Electrochemical Society 2017 ECS journal of solid state science and technology Vol.6 No.12
<P>A p-type oxide is a key element for transparent thin-film transistor applications. Among the various p-type oxides currently available, SnO<SUB>x</SUB> deposited by sputtering is the subject of interest in this study for high-performance and reliable thin films. A tin target or a tin oxide target is typically used to fabricate p-type SnO<SUB>x</SUB> during sputtering. A metallic target provides easy control of various film properties and chemical compositions, while a ceramic target offers structural stability and better control of stoichiometry. To use the advantages of both metallic and ceramic targets, a composite target of Sn and SnO was devised, which may provide reliable p-type SnO<SUB>x</SUB> and better control of structural defects. We evaluated four different composition ratios of Sn+SnO targets: a 100 mol% metallic Sn target, a composite target with 50 mol% Sn powder + 50 mol% SnO powder, a composite target with 20% Sn powder + 80 mol% SnO powder, and a 100 mol% ceramic SnO target. SnO<SUB>x</SUB> films were deposited under various sputtering conditions and analyzed structurally, electrically and optically. The composite target with 20 mol% Sn was found to be a promising candidate for p-type SnO<SUB>x</SUB> films, showing >75% transmittance and high mobility up to 9.07 cm<SUP>2</SUP>V<SUP>−1</SUP>s<SUP>−1</SUP>.</P>
Effects of forming gas plasma treatment on low-temperature Cu-Cu direct bonding
Kim, Sungdong,Nam, Youngju,Kim, Sarah Eunkyung IOP Publishing 2016 Japanese journal of applied physics Vol.55 No.6
<P>Low-temperature Cu-Cu direct bonding becomes of great importance as Cu is widely used as an interconnection material in the packaging industry. Preparing a clean surface is a key to successful Cu-Cu direct bonding. We investigated the effects of forming gas plasma treatment on the reduction of Cu oxide and Cu-Cu bonding temperature. As plasma input power and treatment time increased, Cu oxide could be effectively reduced, and this could be attributed to the enhanced chemical reaction between forming gas plasma and Cu oxide. When the bonding temperature was reduced from 415 to 300 degrees C, the bonding strength of the plasma-treated interface was increased from 1.8 to 5.55 J/m(2) while that of the wet-treated interface was decreased. (C) 2016 The Japan Society of Applied Physics</P>
Kim, Cheol,Kim, Sungdong,Kim, Sarah Eunkyung Elsevier S.A. 2017 Thin Solid Films Vol.634 No.-
<P><B>Abstract</B></P> <P>SnO<SUB>x</SUB> thin films are potentially excellent conductive material with large hole mobility and have attracted ever-increasing attention for next generation electronic applications. In this study, SnO<SUB>x</SUB> thin films were deposited on a borosilicate glass substrate by radio frequency (rf) reactive sputtering using a SnO/Sn (9:1mol% ratio) composite target. The composite target was used to produce a chemically stable composition of SnO<SUB>x</SUB> thin film while controlling structural defects by chemical reaction between tin and oxygen. The effects of oxygen contents and annealing on various properties of SnO<SUB>x</SUB> thin films were studied. The structural analysis was carried out using X-ray photoelectron spectroscopy and X-ray diffraction. The electrical and optical analyses were performed by the Van der Pauw Hall effect measurement and UV/VIS spectrometer, respectively. SnO<SUB>x</SUB> thin films at P<SUB>O2</SUB> =0% (annealed) and 3% (as deposited) exhibited a p-type conductivity of 0.09–0.11Ω<SUP>−1</SUP> cm<SUP>−1</SUP>, a hole mobility of 0.2–1.2cm<SUP>2</SUP> V<SUP>−1</SUP> s<SUP>−1</SUP>, and a hole concentration of ~10<SUP>18</SUP> cm<SUP>−3</SUP>. Also, these thin films showed the transmittance of about 70% and an optical bandgap of 2.75–3.01eV.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Fabrication of p-type transparent SnO<SUB>x</SUB> thin films by rf sputtering </LI> <LI> SnO:Sn composite target effect on electrical properties of p-type SnO<SUB>x</SUB> thin films </LI> <LI> Study of electrical conductivity conversion of p-type SnO<SUB>x</SUB> thin films </LI> <LI> Annealing effect on electrical properties of p-type SnO<SUB>x</SUB> thin films </LI> </UL> </P>
Fumarate-Mediated Persistence of <i>Escherichia coli</i> against Antibiotics
Kim, Jun-Seob,Cho, Da-Hyeong,Heo, Paul,Jung, Suk-Chae,Park, Myungseo,Oh, Eun-Joong,Sung, Jaeyun,Kim, Pan-Jun,Lee, Suk-Chan,Lee, Dae-Hee,Lee, Sarah,Lee, Choong Hwan,Shin, Dongwoo,Jin, Yong-Su,Kweon, Da American Society for Microbiology 2016 Antimicrobial agents and chemotherapy Vol.60 No.4
<P>Bacterial persisters are a small fraction of quiescent cells that survive in the presence of lethal concentrations of antibiotics. They can regrow to give rise to a new population that has the same vulnerability to the antibiotics as did the parental population. Although formation of bacterial persisters in the presence of various antibiotics has been documented, the molecular mechanisms by which these persisters tolerate the antibiotics are still controversial. We found that amplification of the fumarate reductase operon (FRD) in Escherichia coli led to a higher frequency of persister formation. The persister frequency of E. coli was increased when the cells contained elevated levels of intracellular fumarate. Genetic perturbations of the electron transport chain (ETC), a metabolite supplementation assay, and even the toxin-antitoxin-related hipA7 mutation indicated that surplus fumarate markedly elevated the E. coli persister frequency. An E. coli strain lacking succinate dehydrogenase (SDH), thereby showing a lower intracellular fumarate concentration, was killed similar to 1,000-fold more effectively than the wild-type strain in the stationary phase. It appears that SDH and FRD represent a paired system that gives rise to and maintains E. coli persisters by producing and utilizing fumarate, respectively.</P>