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스퍼터링법에 의한 ZnO 투명전도막의 제작과 전기적 특성
유용택,조재철,정운조,정용근 한국센서학회 1997 센서학회지 Vol.6 No.1
ZnO thin film had been deposited the glass by sputtering method, and investigated by optical and electrical properties. When the rf power was 180W and sputtering pressure was 1 x 10^(-3) Torr at room temperature, thin film deposited had strongly oriented c-axis and the lowest resistivity(1 x 10^(-4)Ω·cm), and then carrier concentration and Hall mobility were 6.27x10^(20) cm^(-3) and 22.04㎠/V·s, respectively. Transmittance of ZnO thin film in visible range was above 90%, and this thin film cut off the ultraviolet range below 330nm and the infrared and range above 850nm. And after annealing in hydrogen ate, the resistivity of ZnO thin film was somewhat decreased, while obtained as stable state.
Reaction Sintering 에 의한 ZnO:Al2O3 합성물의 구조 및 광학적 특성
박계춘,유용택,강병모 한국센서학회 1998 센서학회지 Vol.7 No.3
ZnO and Al₂O₃ powder were weighed in 1 : 1 mole ratio and ball-milled in ethanol for 3 h. Dried mixture were pressed and then sintered at 900 ℃ ∼ 1200 ℃ for 3 h in vacuum(3 X 10^(-5) Torr). According to XRD, remnant ZnO and Al₂O₃ not converted to ZnAl₂O₄ were observed up to 1100℃, which were completely changed to ZnAl₂O₄ ternary compound at 1200. Optical bandgap is calculated at 4.75 eV. With increasing sintering temperature, PL spectrums shifted to shorter wavelengths and are appeared 430nm at 1200 ℃.
김성구,류용택,박계춘 한국센서학회 1994 센서학회지 Vol.3 No.1
Single-phase CuInS₂ thin film were prepared by E-beam deposition and the effects of its annealing were investigated. The S/In/Cu was stacked from S, In and Cu by EBE method and then, In the nitrogen atmosphere, the stacked layer were annealed to convert chalcopyrite CulnS₂ thin films. and that result we obtained p-type Chalcopyrite CuInS₂ thin films, Its resistivity was 0.03∼0.007Ωcm, Hah mobility was 0.07∼0.1㎠V^(-1)S^(-1) and Hall concentration was 10^(20-21)cm^(-3), respectively.
EBE 법으로 제작한 CuInS2 박막 특서에 관한 연구
김성구,박계춘,류용택 한국센서학회 1994 센서학회지 Vol.3 No.1
The polycrystalline CuInS₂ thin films were prepared by annealing in vacuum and extra S supply of S/In/Cu stacked layers, which were deposited by sequential electron beam evaporation(EBE). n-type CuInS₂ was fabricated in vacuum with chalcopyrite structure and its minimum resistivity was 142ΩCm. Also, p-type CuInS₂ was made in extra S supply with chalcopyrite structure and its minimum resistivity was 137ΩCm.
박계춘,조재철,류용택 한국센서학회 1993 센서학회지 Vol.2 No.1
CdS and Se thin films were deposited on slide glass by EBE method respectively and surface morphology, crystal structure, electrical and optical properties were investigated by substrate temperature and annealing. The deposited CdS film was well fabricated with cubic structure at substrate temperature of 150℃, Se film was deposited with noncrystal structure until substrate temperature of 100℃, but Se film was grown with monoclinic structure at substrate temperature of 150℃. And so. after annealing at 150℃ for 15min, noncrystalline Se was proved to be hexagonal structure. Finally, the maximum output of Se/CdS heterojunction at 5000 lux was 4 mW/㎠ and maximum spectral sensitivity was represented at 585nm.