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Cu_0.28Ag_0.72InSe_1.4S_0.6 薄膜에 關한 硏究
鄭海德,朴桂春 木浦大學校 工業技術硏究所 1991 工業技術硏究誌 Vol.1 No.-
The polycrystalline Cu_0.28Ag_0.72InSe_1.4S_0.6 thin films are prepared by vacuum heat treatment of layer, which is deposited by direct resisting vacuum evaporation. From optical absorption spetra, the optical band gap energy is determined to be 1.5[eV] at room temperature. From electrical method, hole concentration, resistivity and mobility are 9.3*10^18[㎝^-3], 6*10^-2[Ωㆍ㎝], 11.2[㎠/V.sec] respectively at room temperature.
E-beam 제작된 Cu-doped CdS 박막에 관한 연구
이진,박계춘,김성구 木浦大學校 工業技術硏究所 1992 工業技術硏究誌 Vol.2 No.-
In this paper, We prepared the thin film Cu-doped CdS Photovoltaic Cell, varying deposition condition by E-beam process and investigated its properties. After the Cu-CdS films were deposited on transparent ITO glass, We heat-treated to diffuse Cu atoms to CdS film at 350[℃]. With deposited Cu-doped CdS film, We investigated the electrical, optical, X-ray diffraction and junction property. We studied how to prepare the High conversion efficiency Solar cell window layer.
정해덕,박계춘,조재철,정운조,김성구 木浦大學校 工業技術硏究所 1992 工業技術硏究誌 Vol.2 No.-
The polycrystalline CuInS_2 thin films are prepared by vacuum heat treatment of layer, which is deposited by vaccum evaporation in order. The electrical and optical properties of the films are investigated at various sulfur deposition mole rate, substrate temperature, heat treatment temperature and time. From data, n type- CuInS_2 exhibits resistivity, transmittance and energy band gap with 142[Ωㆍ㎝], 73[%], and 1.5[eV] respectively at optimum fabrication condition. Finally, the films are fabricated with chalcopyrite structure.
정운조,박계춘,정해덕 국립7개대학공동논문집간행위원회 2002 공업기술연구 Vol.2 No.-
Ti films were deposited onto 100×100 ㎜ alumina substrates using dc magnetron sputtering under the following conditions; substrate temperature of R.T.∼400 ℃, annealing temperature of 100∼400 ℃ and sputtering gas pressure of 1.3∼3.0×10^-2 Torr. And the film were examined by X-ray diffraction analysis (XRD), scanning electron microscopy(SEM) and 4-point measurement system. The best electrical and structural properties obtained by substrate temperature of ∼200 ℃, target-substrate distance of ∼14 ㎝ and sputtering pressure of 1.3∼1.7×10^-2 Torr. Also at that condition the most excellent adhesion was observed.
강병모,박계춘 木浦大學校 工業技術硏究所 1997 工業技術硏究誌 Vol.7 No.-
ZnO and Al2O3 powders were mixed in 1:1 mole ratio and ball-milled with ethanol for 3h. After the pressing process, the mixtures were sintered at 700°C~1300°C for 5 h in air to form ZnAl2O4. Structural properties were analyzed by X-ray diffraction patterns : optical properties by sbsorption spectra with UV-VIS-NIR Spectrophotometer : microstructural properties by SEM : photoluminescent properties by using PL Measuring System. In result, ZnAl2O4 phosphor is crystallized at 1100°C and optical bandgap is calculated at 4.65 eV. PL spectra were shifted to longer wavelengths with increasing temperature and was appeared around 780mm at 1300°C. Additionally, the peak intensity was very strong at 800°C and was declined with increasing temperature.
정운조,김성,박계춘 국립7개대학공동논문집간행위원회 2001 공업기술연구 Vol.1 No.-
The optical near field patterns, propagation loss and mode sizes of x-cut Ti:LiNbO_3 optical waveguide which was fabricated by Ti-diffusion varying with Ti strip thickness in wet oxygen atmosphere were investigated and tested at optical wavelength 1550㎚. As Ti thickness increased from 760A˚, the insertion loss of waveguide was decreased. But at Ti thickness 1500A˚, mode sizes are widely broadened. The Ti thickness of below 1100A˚ and above 1500A˚ showed negative effects to propagation loss and fiber coupling. The best Ti thickness for fabricating low propagation loss and good fiber coupling was inferred to be between 1100A˚-1500A˚ in our conditions. And for Ti thickness 1150A˚, its propagation loss, horizontal/vertical mode sizes were measured 1.61㏈/㎝, 11.9/8.9㎛ for TM, 0.22㏈/㎝, 12.0/9.1㎛ for TE respectively.
정운조,김성,박계춘 木浦大學校 應用科學硏究院 2001 應用科學硏究誌 Vol.1 No.-
The optical near field patterns, propagation loss and mode sizes of x-cut Ti:LiNbO_3 optical waveguide which was fabricated by Ti-diffusion varying with Ti strip thickness in wet oxygen atmosphere were investigated and tested at optical wavelength 1550nm. As Ti thickness increased from 760Å, the insertion loss of waveguide was decreased. But at Ti thickness 1500Å, mode sizes are widely broadened. This Ti thickness of below 1100Å and above 1500Å showed negative effects to propagation loss and fiber coupling. The best Ti thickness for fabricating low propagation loss and good fiber coupling. The best Ti thickness for fabricating low propagation loss and good fiber coupling was inferred to be between 1100Å-1500Å in our conditions. And for Ti thickness 1150Å, its propagation loss, horizontal/vertical mode sizes were measured 1.61dB/cm, 11.9/8.9㎛ for TM, 0.22dB/cm, 12.0/9.1㎛ for TE respectively.