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스퍼터링법에 의한 ZnO 투명전도막의 제작과 전기적 특성
유용택,조재철,정운조,정용근 한국센서학회 1997 센서학회지 Vol.6 No.1
ZnO thin film had been deposited the glass by sputtering method, and investigated by optical and electrical properties. When the rf power was 180W and sputtering pressure was 1 x 10^(-3) Torr at room temperature, thin film deposited had strongly oriented c-axis and the lowest resistivity(1 x 10^(-4)Ω·cm), and then carrier concentration and Hall mobility were 6.27x10^(20) cm^(-3) and 22.04㎠/V·s, respectively. Transmittance of ZnO thin film in visible range was above 90%, and this thin film cut off the ultraviolet range below 330nm and the infrared and range above 850nm. And after annealing in hydrogen ate, the resistivity of ZnO thin film was somewhat decreased, while obtained as stable state.