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Analysis of the erbium silicide growth mechanism on SOI for n-type SB-MOSFETs
Yarkyeon Kim,Jaeheon Shin,장문규,이성재 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.45 No.2
We have investigated the formation conditions of the stable Er silicides according to the annealing temperature and various ratios of Er to Si thickness considering the strip process of unreacted Er on the silicon on insulator (SOI) substrate. As the thickness ratio of Er to Si layer increases, the synthesized Er silicides on SOI substrate become gradually unstable. Especially, the Er-rich region is formed near the interface between the Si and BOX layer on decreasing the Si thickness and these unstable Er silicides are easily removed in the strip process by SPM. Also, the amount of Si consumed by Er during the silicide formation and the total thickness of the Er silicides are calculated from the density of the Si, Er, and Er silicide. From the experimental and theoretical results, the thickness of the Er layer should be about 1.5 times greater than the theoretical thickness and must be below 1.5 times the Si thickness to form stable Er silicide.
Half-Metallic Ferromagnet Formation on Si Wafers by Using a Silicidation Process
Yarkyeon Kim,최철종,Seongjae Lee,이영백,현영훈 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.3
The half-metallic ferromagnet formation of Co2MnSi on Si-on-insulator (SOI) wafers was investigated using the silicidation technique, which is a compatible process with CMOS fabrication technology and involves the deposition of Co-Mn metallic films on a silicon layer before a thermal annealing step. Correlations were observed between the magnetic properties and the microstructures of the Co-Mn-Si systems prepared using different process conditions. The process of rapid thermal annealing at 600 ℃ for 10 min. was found to produce a strong magnetic lm mainly of Co2MnSi phase, where the saturated magnetization amounts to 5.9 × 10-5 emu/mm2 for a 100-nm-thick film with a coercive field of 99 Oe.
The control of oscillation mode in silicon microbeams using silicon nitride anchor (5 pages)
Baek, In-Bok,Lee, Bong Kuk,Kim, Yarkyeon,Ahn, Chang-Geun,Kim, Young Jun,Yoon, Yong Sun,Jang, Won Ik,Kim, Hakseong,Lee, Sang Wook,Lee, Seongjae American Institute of Physics 2014 Applied Physics Letters Vol.105 No.10
Silicone-Based Adhesives with Highly Tunable Adhesion Force for Skin-Contact Applications
Lee, Bong Kuk,Ryu, Jin Hwa,Baek, In-Bok,Kim, Yarkyeon,Jang, Won Ick,Kim, Sang-Hyeob,Yoon, Yong Sun,Kim, Seung Hwan,Hong, Seong-Gu,Byun, Sangwon,Yu, Han Young Wiley (John WileySons) 2017 Advanced healthcare materials Vol.6 No.22
장문규,Yarkyeon Kim,신재헌,이성재,박경완 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.45 No.3
Erbium-silicided 50-nm-gate-length n-type Schottky barrier metal-oxide-semiconductor elde ect transistors (SB-MOSFETs) with 5 nm gate oxide thickness are manufactured. The saturation current is 120 A/m and on/o-current ratio is higher than 105 with low leakage current less than 10 nA/m. Novel phenomena of this device are discussed. The increase in tunneling current with an increase in drain voltage is explained by reference to a drain-induced Schottky barrier thicknessthinning eect. The abnormal increase of drain current with a decrease of gate voltage is explained by hole carrier injection from drain into channel. The mechanism of threshold voltage increase in SB-MOSFETs is discussed. Based on the extracted model parameters, the performance of 10-nmgate- length SB-MOSFETs is predicted. The results show that the subthreshold swing value can be lower than 60 mV/decade.
Moongyu Jang,Yarkyeon Kim,Jaeheon Shin,Seongjae Lee,Kyoungwan Park 대한전자공학회 2004 Journal of semiconductor technology and science Vol.4 No.2
Silicided 50-nm-gate-length n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors (SB-MOSFETs) with 5 nm gate oxide thickness are manufactured. The saturation current is 120 uA/uM and on/off-current ratio is higher than 10^5 with low leakage current less than 10nA/um. Novel phenomena of this device are discussed. The increase of tunneling current with the increase of drain voltage is explained using drain induced Schottky barrier thickness thinning effect. The abnormal increase of drain current with the decrease of gate voltage is explained by hole carrier injection from drain into channel. The mechanism of threshold voltage increase in SB-MOSFETs is discussed. Based on the extracted model parameters, the performance of 10-nm-gate-length that the subthreshold swing valve can be lower than 60mV/decade.
Characterization of erbium-silicided Schottky diode junction
Jang, Moongyu,Kim, Yarkyeon,Shin, Jaeheon,Lee, Seongjae IEEE 2005 IEEE electron device letters Vol.26 No.6
Trap density, lifetime, and the Schottky barrier height of erbium-silicided Schottky diode are evaluated using equivalent circuit method. The extracted trap density, lifetime, and Schottky barrier height for hole are determined as 1.5×10<SUP>13</SUP> traps/cm<SUP>2</SUP>, 3.75 ms and 0.76 eV, respectively. By using the developed method, the interface of the Schottky diode can be evaluated quantitatively.
Moongyu Jang,Yarkyeon Kim,Myungsim Jun,Seongjae Lee 대한전자공학회 2005 Journal of semiconductor technology and science Vol.5 No.2
Interface-trap density, lifetime and Schottky barrier height of erbium-silicided Schottky diode are evaluated using equivalent circuit method. The extracted interface trap density, lifetime and Schottky barrier height for hole are determined as 1.5×10^(13) traps/㎠, 3.75 ms and 0.76 eV, respectively. The interface traps are efficiently cured by N₂annealing. Based on the diode characteristics, various sizes of erbium- silicided/platinum-silicided n/p-type Schottky barrier metal-oxide-semiconductor field effect transistors (SB-MOSFETs) are manufactured from 20㎛ to 35nm. The manufactured SB-MOSFETs show excellent drain induced barrier lowering (DIBL) characteristics due to the existence of Schottky barrier between source and channel. DIBL and subthreshold swing characteristics are compatible with the ultimate scaling limit of double gate MOSFETs which shows the possible application of SB-MOSFETs in nanoscale regime.