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만성 정신분열증 환자에 있어 Clozapine 투여에 의한 비정형적 Prolactin반응
이홍식,김찬형,기선완 대한신경정신의학회 1994 신경정신의학 Vol.33 No.3
Objects : Typical antipsychotic drugs robustily increase prolactin both in rodents and in man. Unlike in rodents, Meltzer(1989) found that acutely administered clozapine did not increases serum prolactin levels in schizophrenia and his preliminary data suggested that prolactin levels might even be reduced during clozapine treatment. Methods : We investigated the serum prolactin levels in chronic schizophrenics, who were assigned to clozapine(N=28) or haloperidol(N=20) for eight weeks. Blood samples were obtained biweekly during the study period, and serum prolactin concentrations were measured by standard double-antibody radioimmunoassay. Results : The serum prolactin levels were not changed in the schizophrenic patients to whom clozapine had been administrated, otherwise marked increases in serum prolactin level were observed in the haloperidol treatment group. Conclusion : Our results suggest that clozapine differs from typical antipsychotics(e.g., haloperidol) in its failure to produce serum prolactin elevation in schizophrenic patients.
Hong, Wan-Shick,Kim, Jong-Man The Korean Infomation Display Society 2003 Journal of information display Vol.4 No.3
A low temperature doping technique to be applied in poly-Si TFTs on plastic substrates was investigated. Heavily-doped amorphous silicon layers were deposited on poly-Si and the dopant atoms were driven in by subsequent excimer laser annealing. The entire process was carried out under a substrate temperature of 120 $^{\circ}C$, and a sheet resistance of as low as 300 ${\Omega}$/sq. was obtained.
홍완식,Hong, Wan-Shick 한국진공학회 2014 진공 이야기 Vol.1 No.3
Vacuum growth of thin films via chemical vapor deposition (CVD) methods has been extensively used in modern semiconductor and flat panel display industries. The CVD processes have a wide range of variation and are categorized according to their working conditions, power sources, precursor materials, and so forth. Basic components and process steps common to all CVD branches are discussed. In addition, characteristics and applications of two major CVD techniques - LPCVD and PECVD - are reviewed briefly.
Park, Jung-Hoon,Hong, Wan-Shick,Kim, Gang Chel,Chang, Hye Jung,Lee, Jong-Ho,Yoon, Kyung Joong,Son, Ji-Won The Electrochemical Society 2013 Journal of the Electrochemical Society Vol.160 No.9
<P>The effect of the post-annealing on the properties of the La<SUB>0.6</SUB>Sr<SUB>0.4</SUB>CoO<SUB>3-δ</SUB>-Ce<SUB>0.9</SUB>Gd<SUB>0.1</SUB>O<SUB>2-δ</SUB> (LSC-GDC) nano-composite cathode fabricated by pulsed laser deposition (PLD) is investigated. Implementing the post-annealing treatment at a temperature in the range of 800°C ∼ 1000°C enables the control of the grain size in the LSC-GDC over the range of several tens of nanometers to near one-hundred nanometers. Moreover, the post-annealing treatment improves the interconnectivity between the same materials and mitigates the vertical separation between the columnar domains, resulting in the reduction of the lateral conduction loss. In terms of the electrochemical properties, the cathodic activity of the post-annealed cathode appears to be reduced due to the reduction in the number of the surface reaction sites, which is a result of the post-annealing grain-size growth. Although this grain-size growth results less power output of the solid oxide fuel cell (SOFC) using a post-annealed LSC-GDC cathode relative to that of the SOFC using the as-deposited LSC-GDC cathode, the lifetime of the former at 650°C is improved.</P>
Lee, Kyoung-Min,Hong, Wan-Shick American Scientific Publishers 2011 Journal of nanoscience and nanotechnology Vol.11 No.1
<P>Silicon nitride (SiN(x)) films for a gate dielectric layer of thin film transistors were deposited by catalytic chemical vapor deposition at a low temperature (< or = 200 degrees C). A mixture of SiH4, NH3 and H2 was used as a source gas. Metal-insulator-semiconductor (MIS) capacitor structures were fabricated for current-voltage (I-V) and capacitance-voltage (C-V) measurements. The breakdown voltage characteristics of the SiN(x) films were improved by the increase of NH3/SiH4 and H2/SiH4 mixing ratios and substrate temperatures. H2 treatment was attempted to improve the breakdown voltage further. A breakdown voltage as high as 6.6 MV/cm was obtained after H2 annealing at 180 degrees C. The defect states inside the SiN(x) films were analyzed by photoluminescence spectra. Silicon dangling bonds (2.5 eV) and nitrogen dangling bonds (3.1 eV) were observed. These defect states inside the SiN(x) films disappeared after H2 annealing. Flat band voltage shifts were observed in C-V curves, and their magnitudes decreased as the defect states inside the SiN(x) films decreased.</P>
Park, Jung-Hoon,Hong, Wan-Shick,Yoon, Kyung Joong,Lee, Jong-Ho,Lee, Hae-Weon,Son, Ji-Won The Electrochemical Society 2014 Journal of the Electrochemical Society Vol.161 No.1
<P>Binary nanocomposite thin films of lanthanum strontium cobaltite and gadolinia-doped ceria (La<SUB>0.6</SUB>Sr<SUB>0.4</SUB>CoO<SUB>3−δ</SUB>-Ce<SUB>0.9</SUB>Gd<SUB>0.1</SUB>O<SUB>2−δ</SUB>, LSC-GDC) were prepared using pulsed laser deposition (PLD) for application as cathodes of low-temperature operating solid oxide fuel cell (LT-SOFC). The thin films were fabricated under identical deposition conditions, but the LSC:GDC mixing ratio was varied. The PLD-processed LSC-GDC nanocomposites exhibit different physical and electrochemical properties than do conventional powder-processed composite SOFC cathodes. The LSC:GDC mixing ratio not only alters the composition of the LSC-GDC nanocomposite thin films but also affects their crystallographic orientation and microstructure. The major component of the composite appears to govern the physical properties of the LSC-GDC nanocomposite thin films. The electrochemical properties measured with AC impedance spectroscopy during the half-cell tests reveal that the electrochemical performance of the LSC-GDC nanocomposite cathode is enhanced as the LSC content in the composite increases, which is in contrast to the behavior of powder-processed composite cathodes. The present study provides important insight into the design and application of thin-film-processed nanocomposite electrodes.</P>
Noh, Se Myoung,Hong, Wan-Shick The Korean Ceramic Society 2015 한국세라믹학회지 Vol.52 No.3
Silicon nitride films were deposited at $100^{\circ}C$ by using the catalytic chemical vapor deposition technique. The source gas mixing ratio, $R_N=[NH_3]/[SiH_4]$, was varied from 10 to 30, and the hydrogen dilution ratio, $R_H=[H_2]/[SiH_4]$, was varied from 20 to 100. The breakdown field strength reached a maximum value at $R_N=20$ and $R_H=20$, whereas the resistivity decreased in the same sample. The relative permittivity had a positive correlation with the breakdown field strength. The capacitance-voltage threshold curve showed an asymmetric hysteresis loop, which became more squared as $R_H$ increased. The width of the hysteresis window showed a negative correlation with the slope of the transition region, implying that the combined effect of $R_N$ and $R_H$ overides the interface defects while creating charge storage sites in the bulk region.