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Schottky Barrier MOSFETs with High Current Drivability for Nano-regime Applications
Moongyu Jang,Yarkyeon Kim,Myungsim Jun,Cheljong Choi,Taeyoub Kim,Byoungchul Park,Seongjae Lee 대한전자공학회 2006 Journal of semiconductor technology and science Vol.6 No.1
Various sizes of erbium/platinum silicided n/p-type Schottky barrier metal-oxide-semiconductor field effect transistors (SB-MOSFETs) are manufactured from 20μm to 10nm. The manufactured SB-MOSFETs show excellent DIBL and subthreshold swing characteristics due to the existence of Schottky barrier between source and channel. It is found that the minimization of trap density between silicide and silicon interface and the reduction of the underlap resistance are the key factors for the improvement of short channel characteristics. The manufactured 10 nm n-type SBMOSFET showed 550μA/um saturation current at VGS-VT = VDS = 2V condition (Tox = 5nm) with excellent short channel characteristics, which is the highest current level compared with reported data.
Jang, Moongyu,Park, Youngsam,Jun, Myungsim,Hyun, Younghoon,Choi, Sung-Jin,Zyung, Taehyoung Springer 2010 NANOSCALE RESEARCH LETTERS Vol.5 No.10
<P>Silicon nanowires are patterned down to 30 nm using complementary metal-oxide-semiconductor (CMOS) compatible process. The electrical conductivities of n-/p-leg nanowires are extracted with the variation of width. Using this structure, Seebeck coefficients are measured. The obtained maximum Seebeck coefficient values are 122 μV/K for p-leg and −94 μV/K for n-leg. The maximum attainable power factor is 0.74 mW/m K<SUP>2</SUP> at room temperature.</P>
Moongyu Jang,Yarkyeon Kim,Myungsim Jun,Seongjae Lee 대한전자공학회 2005 Journal of semiconductor technology and science Vol.5 No.2
Interface-trap density, lifetime and Schottky barrier height of erbium-silicided Schottky diode are evaluated using equivalent circuit method. The extracted interface trap density, lifetime and Schottky barrier height for hole are determined as 1.5×10^(13) traps/㎠, 3.75 ms and 0.76 eV, respectively. The interface traps are efficiently cured by N₂annealing. Based on the diode characteristics, various sizes of erbium- silicided/platinum-silicided n/p-type Schottky barrier metal-oxide-semiconductor field effect transistors (SB-MOSFETs) are manufactured from 20㎛ to 35nm. The manufactured SB-MOSFETs show excellent drain induced barrier lowering (DIBL) characteristics due to the existence of Schottky barrier between source and channel. DIBL and subthreshold swing characteristics are compatible with the ultimate scaling limit of double gate MOSFETs which shows the possible application of SB-MOSFETs in nanoscale regime.
Characteristics of n-Type SB-MOSFETs Manufactured by Using a Metal-Gate & a High-K Dielectric
Byoungchul Park,장문규,최철종,이희덕,Myungsim Jun,이성재,Taeyoub Kim,Yarkyeon Kim 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.50 No.3
We demonstrated n-type Schottky-barrier metal-oxide-semiconductor field-effect transistors (SB-MOSFETs) by using a low-temperature oxide dummy gate process to effectively form a high-k metal-gate structure. First, a MOS capacitor made a 5-nm-thick high-K dielectric with a tungsten electrode was fabricated. The equivalent oxide thickness and the flat-band voltage extracted by using a quantum-mechanical capacitance-voltage analysis were 1.69 nm and --0.15 V, respectively. A 2 $\mu$m-gate-length n-type SB-MOSFETs with a source and a drain of erbium silicide showed a high on/off-current ratio of about 10$^5$ at a drain voltage of 1 V. The subthreshold swing and the saturation current were 81 mV/dec and 100 $\mu$A/$\mu$m, respectively.