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Xue-Ping Li,Qing-Qing Xu,Wei-Biao Liao,Zhan-Jun Ma,Xiao-Ting Xu,Meng Wang,Peng-Ju Ren,Li-Juan Niu,Xin Jin,Yong-Chao Zhu 한국식물학회 2016 Journal of Plant Biology Vol.59 No.5
Abscisic acid (ABA) and hydrogen peroxide (H2O2) are important regulatory factors involved in plant development under adversity stress. Here, the involvement of H2O2 in ABA-induced adventitious root formation in cucumber (Cucumis sativus L.) under drought stress was determined. The results indicated that exogenous ABA or H2O2 promoted adventitious rooting under drought stress, with a maximal biological response at 0.5 μM ABA or 800 μM H2O2. The promotive effects of ABA-induced adventitious rooting under drought stress were suppressed by CAT or DPI, suggesting that endogenous H2O2 might be involved in ABA-induced adventitious rooting. ABA increased relative water content (RWC), leaf chlorophyll content, chlorophyll fluorescence parameters (Fv/Fm, ΦPS II and qP), water soluble carbohydrate (WSC) and soluble protein content, and peroxidase (POD), polyphenol oxidase (PPO) and indoleacetate oxidase (IAAO) activities, while decreasing transpiration rate. However, the effects of ABA were inhibited by H2O2 scavenger CAT. Therefore, H2O2 may be involved in ABA-induced adventitious root development under drought stress by stimulating water and chlorophyll content, chlorophyll fluorescence, carbohydrate and nitrogen content, as well as some enzyme activities.
Jun Guan,Yu Xue,Rong-yu Zang,Ji-hong Liu,Jian-qing Zhu,Ying Zheng,Bo Wang,Hua-ying Wang,Xiao-jun Chen 대한부인종양학회 2021 Journal of Gynecologic Oncology Vol.32 No.4
Background: Sentinel lymph node (SLN) mapping has been recommended as an alternative staging approach to lymphadenectomy for apparent uterine-confined endometrial cancer (EC). However, the prognostic value of SLN mapping alone instead of systematic lymphadenectomy on EC patients remains unclear. Methods: A multi-center, open label, non-inferiority randomized controlled trial has been designed to identify if SLN mapping alone is not inferior to pelvic lymphadenectomy on prognosis of patients with intermediate-high-risk EC clinically confined to uterus. Eligible patients will be 1:1 randomly assigned to accept SLN mapping or pelvic lymphadenectomy. The primary endpoint is the 2-year progression-free survival (PFS). The second points are the 5-year PFS, 5-year overall survival, surgery-related adverse events and life quality. A total of 780 patients will be enrolled from 6 hospitals in China within 3-year period and followed up for 5 years. Trial Registration: ClinicalTrials.gov Identifier: NCT04276532
Jun Li,Liang Zhang,Xiao-Wen Zhang,Hao Zhang,Xue-Yin Jiang,Dong-bin Yu,Wen-Qing Zhu,Zhi-Lin Zhang 한국물리학회 2010 Current Applied Physics Vol.10 No.5
Bottom-contact (BC) copper phthalocyanine (CuPc) thin film transistor with UV/ozone treated Au as a source/drain electrode was fabricated and the contact resistance was estimated from the transmission line method (TLM). Comparing the properties of OTFT with untreated Au electrode, the performance of the BC CuPc-TFT with the UV/ozone treated Au electrodes was significantly improved: saturation mobility increased from 4.69 × 10−3 to 2.37 × 10−2 ㎠/V s, threshold voltage reduced from −29.1 to −6.4 V, and threshold swing varied from 5.08 to 2.25 V/decade. The contact resistance of the device with UV/ozone treated Au electrodes was nearly 20 times smaller than that of the device with untreated Au electrodes at the gate voltage of −20 V. This result indicated that using the UV/ozone treated Au electrode is an effective method to reduce the contact resistance. The present BC configuration with UV/ozone treated Au electrodes could be a significant step towards the commercialization of OTFT technology.
Suppression of bias stress-induced degradation of pentacene-TFT using MoOx interlayer
Jun Li,Hua-Ping Lin,Fang Zhou,Wen-Qing Zhu,Xue-Yin Jiang,Zhi-Lin Zhang 한국물리학회 2012 Current Applied Physics Vol.12 No.1
The bias stress effect in pentacene thin-film transistors (TFTs) with and without MoOx interlayer was characterized. The device without MoOx interlayer showed a large threshold voltage shift of 5.1 V after stressing with a constant gate-source voltage of 40 V for 10000 s, while at the same condition, the device with MoOx interlayer showed a low threshold voltage shift of 1.9 V. The results can be attributed to the stable interface between MoOx/pentacene and small contact resistance change for the device with MoOx/Cu electrode. Pentacene-TFTs with MoOx interlayer showed a high field-effect mobility of 0.61 cm2/V s and excellent bias stability, which could be a significant step toward the commercialization of OTFT technology.
Improving the electrical performance of HfInZnO-TFTs by introducing a thin ITO interlayer
Jun Li,Xing-Wei Ding,Jianhua Zhang,Wen-Qing Zhu,Xue-Yin Jiang,Zhi-Lin Zhang 한국물리학회 2014 Current Applied Physics Vol.14 No.8
We have fabricated hafniumeindiumezinc-oxide (HfInZnO) thin film transistors (TFT) with indiumetinoxide (ITO) interlayer. Compared with conventional HfInZnO-TFT, the electrical performance and bias stability of HfInZnO-TFTs with ITO interlayer are improved. HfInZnO-TFT with 4-nm-thick ITO interlayer shows a high mobility of 7.2 cm2/V s, a low threshold voltage of 0.13 V and a better bias stability. The performance enhancement is attributed to a decrease in interface trap state and an increase in carrier concentration. It suggests that introducing ITO interlayer at the ALD Al2O3/HfInZnO interface is an effective way to improve the electrical performance and bias stability.
Refined numerical simulation in wind resource assessment
Xue-Ling Cheng,Jun Li,Fei Hu,Jingjing Xu,Rong Zhu 한국풍공학회 2015 Wind and Structures, An International Journal (WAS Vol.20 No.1
A coupled model system for Wind Resource Assessment (WRA) was studied. Using a mesoscale meteorological model, the Weather Research and Forecasting (WRF) model, global-scale data were downscaled to the inner nested grid scale (typically a few kilometers), and then through the coupling Computational Fluid Dynamics (CFD) mode, FLUENT. High-resolution results (50 m in the horizontal direction; 10 m in the vertical direction below 150 m) of the wind speed distribution data and ultimately refined wind farm information, were obtained. The refined WRF/FLUENT system was then applied to assess the wind resource over complex terrain in the northern Poyang Lake region. The results showed that the approach is viable for the assessment of wind energy.
Inhibitory Effect of Benzyl Isothiocyanate on Proliferation in vitro of Human Glioma Cells
Zhu, Yu,Zhuang, Jun-Xue,Wang, Qin,Zhang, Hai-Yan,Yang, Ping Asian Pacific Journal of Cancer Prevention 2013 Asian Pacific journal of cancer prevention Vol.14 No.4
Malignant glioma, also known as brain cancer, is the most common intracranial tumor, having an extremely high mortality and recurrence rate. The survival rate of the affected patients is very low and treatment is difficult. Hence, growth inhibition of glioma has become a hot topic in the study of brain cancer treatment. Among the various isothiocyanate compounds, it has been confirmed that benzyl isothiocyanate (BITC) can inhibit the growth of a variety of tumors, including leukemia, glioma and lung cancer, both inside and outside the body. This study explored inhibitory effects of BITC on human glioma U87MG cells, as well as potential mechanisms. It was found that BITC could inhibit proliferation, induce apoptosis and arrest cell cycling of U87MG cells. In addition, it inhibited the expression of SOD and GSH, and caused oxidative stress to tumor cells. Therefore, it is believed that BITC can inhibit the growth of U87MG cells outside the body. Its mechanism may be related to the fact that BITC can cause oxidative stress to tumor cells.
SiOx interlayer to enhance the performance of InGaZnO-TFT with AlOx gate insulator
Jun Li,Fan Zhou,Hua-Ping Lin,Wen-Qing Zhu,Jianhua Zhang,Xue-Yin Jiang,Zhi-Lin Zhang 한국물리학회 2012 Current Applied Physics Vol.12 No.5
We have fabricated indium-gallium-zinc (IGZO) thin film transistor (TFT) using SiOx interlayer modified aluminum oxide (AlOx) film as the gate insulator and investigated their electrical characteristics and bias voltage stress. Compared with IGZO-TFT with AlOx insulator, IGZO-TFT with AlOx/SiOx insulator shows superior performance and better bias stability. The saturation mobility increases from 5.6 cm2/V s to 7.8 cm2/V s, the threshold voltage downshifts from 9.5 V to 3.3 V, and the contact resistance reduces from 132 Ucm to 91 Ucm. The performance improvement is attributed to the following reasons: (1) the introduction of SiOx interlayer improves the insulator surface properties and leads to the high quality IGZO film and low trap density of IGZO/insulator interface. (2) The better interface between the channel and S/D electrodes is favorable to reduce the contact resistance of IGZO-TFT.