Effect of Light and Feed Restriction During Rearing on Production Performance of Egg Strain Layers

Ahsan-ul-haq, Ahsan-ul-haq,Ahmad, Nazir,Rasool, Shahid,Shah, T.H. Asian Australasian Association of Animal Productio 1997 Animal Bioscience Vol.10 No.6

432 Babcock ISA white leghorn pullets reared for 8 weeks on a standard managemental conditions were exposed to feed/nutrient and light restrictions from 9 to 20 weeks of age. Four feeding regimes i. e. 100, 85 or 70 percent of the recommended allowance and low energy (2,500 Kcal/kg) low protein (13% CP) ration were fed each in the three light regimes i. e. (A) Natural day light starting from 13.24 hr/day at 8 weeks of age and ending 10.41 hr/day at the end of 20 weeks; (B) Constant 11 hr/day light and (C) starting with 13 hr/day at 8 weeks and decreasing @ 20 min/week till 20 weeks of age. At the age of 20 weeks all the birds were shifted to separate cages under uniform lighting feeding and management. During the 21st week light was increased to 12 hr a day and thereafter with an increase of 30 min per week, increased to 16 hr a day at the age of 29 weeks. From 20 weeks onward till 72 week age, all the birds were offered commercial layer rations ad libitum, prepared according to climatic conditions. The results of the study revealed that birds reared under natural and constant light had higher weights than decreasing light, yet they could not out perform during production period. The effect of feed and nutrient restriction, on the other hand, was found significant during rearing as well as production period. The birds exposed to higher level of feed and those exposed to nutrient restriction were lighter in weight. The 100% fed birds laid their first egg at an early age. However, those reared on 85% of the recommendation excelled all other groups in terms of produced number of eggs, egg mass, hen housed and hen day production and net returns.

Investigations of thermoelectric properties of different gallium nitride polytypes through first-principles approach

Ul Haq Bakhtiar,Kim Se-Hun,Alsardia M.M.,Khadka I.B.,Chaudhry Aijaz Rasool,AlFaify S.,Ahmed R.,Shah Zulfiqar Ali 한국물리학회 2023 Current Applied Physics Vol.49 No.-

In recent years, exploring new polytypes of III-V semiconductors has been widely practiced for the development of thermoelectric devices of high efficiency. In this work, the thermoelectric properties of new polytypes, namely the wurtzite(wz), Berrylium oxide (β-BeO), Nickel arsenide (NiAs), Silicon carbide (SiC), and Titanium arsenide (TiAs) phases of GaN have been investigated using the first-principles approaches. It is found that the p-type of doping induces enhancement of the power factors (PFs) and figure-of-merits (zT) of the GaN polytypes. The optimal p-type doping for PFs has been recognized as - 1.67 eV for wz-GaN, - 1.78 eV for β-BeO-GaN, - 1.33 eV for NiAs-GaN, - 1.58 eV for SiC-GaN, and - 1.48 eV for TiAs-GaN. These optimal p-type doping has induced the room-temperature PFs as high as 13.75 × 1010 W/mK2s recorded for wz-GaN, 13.61 × 1010 W/mK2s for β-BeO-GaN, 41.14 × 1010 W/mK2s for NiAs-GaN, 14.06 × 1010 W/mK2s for SiC-GaN, and 49.21 × 1010 W/mK2s for TiAs-GaN. Furthermore, the PFs of the GaN polytypes are enhanced by increasing the temperature. Due to such significant PFs, the zT values corresponding to p-type doping have been recorded as 1.013 for wz-GaN, 0.998 for β-BeO-GaN, 1.00 for NiAs-GaN, 1.015 for SiC-GaN, and 0.999 for TiAs-GaN. Moreover, we comprehensively discussed the electrical and thermal conductivities and Seebeck coefficients (S) for the predicted GaN polytypes. The results of the thermoelectric properties presented in this study reveal the predicted GaN polytypes may find interesting applications in thermoelectric devices for clean energy harvesting.

Composition-induced influence on the electronic band structure, optical and thermoelectric coefficients of the highly mismatched GaNSb alloy over the entire range: A DFT analysis

Ul Haq, Bakhtiar,Ahmed, R.,Rhee, Joo Yull,Shaari, A.,AlFaify, S.,Ahmed, M. Elsevier 2017 Journal of alloys and compounds Vol.693 No.-

<P><B>Abstract</B></P> <P>Capable of achieving wide control over energy band gap and following optoelectronic properties; the highly mismatched alloys (HMAs) are considered to be promising materials for solar energy conversion devices. The dramatic restructuring of energy bands and density of states in HMAs caused by the replacement of anions with distinctly-mismatched isovalent constituents could further be an important course in improving their thermoelectric efficiency. In this paper, we attempt to explore and address the composition-induced modifications in the electronic band structure and the resultant effects on optical spectra and thermoelectric coefficients of GaN<SUB>1−x</SUB>Sb<SUB>x</SUB> based HMAs in the framework of density functional theory. We observe, the substitution of N by Sb, considerably affects its band structure and split the conduction band minimum (CBM) into sub-bands. With increasing Sb composition, the lowest sub-band stemmed from N-s electrons has experienced drastic downward shift leading to energy gap narrowing. Interestingly, the energy gap narrowing along R- Γ is found to be faster than that of Γ- Γ point leading to an amazing direct to indirect band gap crossover. On the other hand, the composition-induced energy gap narrowing stimulates the red-shift in fundamental absorption edge in both ultraviolet and the infrared regime, making the GaNSb potentially useful material for photovoltaic applications. In addition, substantial effect on the thermoelectric coefficients of GaNSb is also observed via Sb substitution. We obtain larger Seebeck coefficient, improved power factors and figure of merit (ZT) for GaNSb at low Sb substitution and found diminishing effect with the further increase of Sb composition. With enhanced Seebeck coefficient, power factor and ZT values at modest doping levels, GaNSb alloy could be a promising candidate for near or above room temperature thermoelectric applications.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Alloying of GaNSb across entire composition in the framework of DFT. </LI> <LI> The striking direct to indirect energy gap cross over. </LI> <LI> Enhanced absorption in ultraviolet, visible and infrared energy regime. </LI> <LI> Comprehensive investigations of thermoelectric properties of GaNSb alloy. </LI> </UL> </P>

Characteristic alterations of gut microbiota in uncontrolled gout

ul-Haq Asad,Lee Kyung-Ann,Seo Hoonhee,Kim Sukyung,Jo Sujin,고경민,Moon Su-Jin,Kim Yun Sung,Choi Jung Ran,Song Ho-Yeon,Kim Hyun-Sook 한국미생물학회 2022 The journal of microbiology Vol.60 No.12

Microbiome research has been on the rise recently for a more in-depth understanding of gout. Meanwhile, there is a need to understand the gut microbiome related to uric acid-lowering drug resistance. In this study, 16S rRNA gene-based microbiota analysis was performed for a total of 65 stool samples from 17 healthy controls and 48 febuxostat-treated gout patients (including 28 controlled subjects with decreased uric acid levels and 20 uncontrolled subjects with non-reduced uric acid levels). Alpha diversity of bacterial community decreased in the healthy control, controlled, and uncontrolled groups. In the case of beta diversity, the bacterial community was significantly different among groups (healthy control, controlled, and uncontrolled groups). Taxonomic biomarker analysis revealed the increased population of g-Bifidobacterium in healthy controls and g-Prevotella in uncontrolled patients. PCR further confirmed this result at the species level. Additionally, functional metagenomics predictions led to the exploration of various functional biomarkers, including purine metabolism. The results of this study can serve as a basis for developing potential new strategies for diagnosing and treating gout from microbiome prospects.

Bioloistic-mediated Transformation of Cotton (Gossypium hirsutum L.): Embryogenic Calli as Explant

Haq Ikram-ul,Asad Shaheen,Zafar Yusuf The Korean Society of Plant Biotechnology 2005 Plant molecular biology and biotechnology research Vol.7 No.4

Genetic transformation was carried out by using biolistic gun method. The hypocotyl derived embryogenic calli (explants) of cotton (Gossypium hirsutum L.) cv. Cocker-312 were transformed with a recombinant pGreen II plasmid, in which both, bar (selection marker) and GUS (${\beta}$-glucuronidase) reporter genes were incorporated. Explants were arranged on osmoticum-containing medium (0.5M mannitol) 4 hours prior to and 16 hours after bombardment that was resulted into an increase about >80% for GUS stable expression. 3 days after bombardment, GUS assay was performed, which exhibited, $18.36{\pm}1.00$ calli showed blue spots. The transformed embryogenic calli were cultured on selection medium (@ 6 mg/L basta) for 3 months. The putative transgenic plants were developed via selective somatic embryogenesis (@1.50 mg/L basta); maximum $27.58{\pm}1.25$ somatic embryos were obtained while $17.47{\pm}1.00$ embryos developed into plantlets (@ 0.75mg/L basta). In five independent experiments, up to 7.24% transformation efficiency was recorded. The presence of the transgenes was analyzed by using PCR and southern hybridization analysis. The transgenic plants were developed with in 6-7 months, but mostly transformants were abnormal in morphology.

Recent Advancements in the Water Resistance Improvement of Magnesium Oxychloride Cement: An Overview

Haq, Inzimam Ul(하크 인지맘 울),Nawaz, Ahmad(나와즈 아메드),Lee, Haeng Ki(이행기) 한국콘크리트학회 2023 한국콘크리트학회 학술대회 논문집 Vol.35 No.2

Engineering of highly mismatched alloy with semiconductor and semi-metallic substituent's for photovoltaic applications

Haq, Bakhtiar Ul,Ahmed, R.,Mohamad, Mazmira,Shaari, A.,Rhee, JooYull,AlFaify, S.,Kanoun, Mohammed Benali,Goumri-Said, Souraya ELSEVIER 2017 Current Applied Physics Vol.17 No.2

<P>Highly mismatched alloys (HMAs) are getting a substantial interest of researchers because of holding competence of rapid change in physical properties with minor compositional change and consequently showing their potential for solar energy and photovoltaic applications. In the present density functional theory based work, we design HMAs from the extremely dissimilar GaP (semiconductor) and GaBi (semi metal). The alloying of the two compounds with unmatched electronic characteristics has triggered a rapid reduction in the energy gap of GaPBi. The energy gap is reduced by 39.3 meV for every 1% increase in Bi composition. The semiconductor behavior of GaPBi based HMAs is found to be transformed to semi metallic for replacing 64.6% of P atoms by Bi. Unlike the conventional alloys, the variation in the electronic energy gap of GaP1-xBix shows deviation from the Vegard's formalism. Where the optical properties are strongly influenced with the narrowing energy gap of GaPBi. For the Bi-rich GaPBi, the notable red shift is observed in optical dielectric function and absorption spectra. Moreover, the larger atomic size of Bi has enhanced the lattice parameters of Bi-rich GaPBi. The GaPBi based HMAs with tunable energy gap in the span of 2.51 eV-0 eV and the interesting optical properties highlight them prospective materials for optoelectronic applications. (C) 2016 Elsevier B.V. All rights reserved.</P>

High Frequency of Callus Induction, its Proliferation and Somatic Embryogenesis in Cotton (Gossypium hirsutum L.)

Haq, Ikram-ul,Zafar, Yusuf The Korean Society of Plant Biotechnology 2004 Plant molecular biology and biotechnology research Vol.6 No.1

Callus induction and somatic embryogenesis are fundamental to cotton tissue culture biotechnology. An efficient protocol for callus induction, somatic embryogenesis and their maturation have been developed to regenerate plantlets from cotton (Gossypium hirsutum L.) variety coker 312. Embryogenic callus was initiated from hypo-cotyl region that was used as an explant at seedling stage when it was about 7-8 days old. Callus induction was achieved through culturing hypocotyls (5-7mm) on $MS_{1a} medium supplemented with 2,4-D (0.1 mg/L) and KT (0.5 mg/L) for six weeks. A friable, colorless, bulky and well proliferating callus becomes greenish with the addition of NAA (2.0 mg/L), ZT (0.1 mg/L) and removal of 2,4-D (M $S_{1b}$) cultured for two weeks then again transferred to $MS_{1a}. 2,4-dichlorophenoxyacetic acid (2,4-D) promoted the proliferation of embryogenic callus, but had a negative effect on the differentiation and germination of somatic embryos. ZT (0.1mg/L) and activated charcoal (2g/L), both hormones play an important role in differentiation and germination of somatic embryos in hypocotyls derived embryogenic callus but in case of cotton, such a capability have been observed on MS medium with 1.92 g/L $KNO_3$, but it is considered to attain somewhat more improvement. High embryogenesis frequency was achieved through nutrient deficient stress treatment. The frequency of globular embryogenesis (two-three folds) was achieved when well proliferating callus was (from $MS_{1a}$ media) cultured on MS (1/5 strength) medium for four weeks. Here the development of anthocyanins is the best indicator for somatic embryogenesis. However, when embryoid callus was cultured on MS (full strength) medium, the globular embryos were developed into normal plantlets immediately. In this procedure 27.49% cotyledenary embryos were developed. Of that 70% cotyledenary embryos were developed not only into normal plantlets but rooted simultaneously, when cultured on MS (with 0.05 mgg/L giberrelic acid) medium. So complete plants could be regenerated through somatic embryogenesis from hypocotyl explants within 6 months.s.

APPLICATION OF WAVELET ANALYSIS AND MULTI-RESOLUTION DECOMPOSITION FOR HIGH QUALITY COMPRESSION AND RECONSTRUCTION

Fahim-ul-Haq,Azra Khalid,Saad Umer Baig 한국멀티미디어학회 2010 한국멀티미디어학회 국제학술대회 Vol.2010 No.-

With growing demand of various imaging applications, storage requirements of digital imagery are increasing explosively. Efficient representation of image data, their storage and transmission through limited communication bandwidth is a crucial and active area of development today and calls for efficient storage and transmission requirements. Wavelet transform provides analysis details on different levels with much less space as compared to the original data, resulting in high quality image compression. Wavelet transformation separates images into scales through a feature known as multi-resolution analysis. The paper describes wavelet analysis using Daubeucies wavelet as the basis function for approximations. Here a novel multi-resolution analysis based on Daubeucies wavelet is investigated which results in greater compression at low bit-rates and high quality reconstruction

Red organic light-emitting diodes with high efficiency, low driving voltage and saturated red color realized via two step energy transfer based on ADN and Alq3 co-host system

Khizar-ul Haq,Liu Shan-peng,M.A. Khan,X.Y. Jiang,Z.L. Zhang,Jin Cao,W.Q. Zhu 한국물리학회 2009 Current Applied Physics Vol.9 No.1

We demonstrated efficient red organic light-emitting diodes based on a wide band gap material 9,10-bis(2-naphthyl)anthracene (ADN) doped with 4-(dicyano-methylene)-2-t-butyle-6-(1,1,7,7-tetramethyl-julolidyl-9-enyl)-4H-pyran (DCJTB) as a red dopant and 2,3,6,7-tetrahydro-1,1,7,7,-tetramethyl-1H,5H,11H-10(2-benzothiazolyl)quinolizine-[9,9a,1gh]coumarin (C545T) as an assistant dopant. The typical device structure was glass substrate/ITO/4,4',4''-tris(N-3-methylphenyl-N-phenyl-amino)triphenylamine (m-MTDATA)/ N,N'-bis(naphthalene-1-yl)-N,N0-diphenyl-benzidine (NPB)/[ADN:Alq3]:DCJTB:C545T/Alq3/LiF/Al. It was found that C545T dopant did not by itself emit but did assist the energy transfer from the host (ADN) to the red emitting dopant via cascade energy transfer mechanism. The OLEDs realized by this approach significantly improved the EL efficiency. We achieved a significant improvement regarding saturated red color when a polar co-host emitter (Alq3) was incorporated in the matrix of [ADN:Alq3]. Since ADN possesses a considerable high electron mobility of 3.1 × 10-4 ㎠ V-1 s-1, co-host devices with high concentration of ADN (>70%) exhibited low driving voltage and high current efficiency as compared to the devices without ADN. We obtained a device with a current efficiency of 3.6 cd/A, Commission International d’Eclairage coordinates of [0.618, 0.373] and peak λmax = 620 nm at a current density of 20 mA/㎠. This is a promising way of utilizing wide band gap material as the host to make red OLEDs, which will be useful in improving the electroluminescent performance of devices and simplifying the process of fabricating full color OLEDs. We demonstrated efficient red organic light-emitting diodes based on a wide band gap material 9,10-bis(2-naphthyl)anthracene (ADN) doped with 4-(dicyano-methylene)-2-t-butyle-6-(1,1,7,7-tetramethyl-julolidyl-9-enyl)-4H-pyran (DCJTB) as a red dopant and 2,3,6,7-tetrahydro-1,1,7,7,-tetramethyl-1H,5H,11H-10(2-benzothiazolyl)quinolizine-[9,9a,1gh]coumarin (C545T) as an assistant dopant. The typical device structure was glass substrate/ITO/4,4',4''-tris(N-3-methylphenyl-N-phenyl-amino)triphenylamine (m-MTDATA)/ N,N'-bis(naphthalene-1-yl)-N,N0-diphenyl-benzidine (NPB)/[ADN:Alq3]:DCJTB:C545T/Alq3/LiF/Al. It was found that C545T dopant did not by itself emit but did assist the energy transfer from the host (ADN) to the red emitting dopant via cascade energy transfer mechanism. The OLEDs realized by this approach significantly improved the EL efficiency. We achieved a significant improvement regarding saturated red color when a polar co-host emitter (Alq3) was incorporated in the matrix of [ADN:Alq3]. Since ADN possesses a considerable high electron mobility of 3.1 × 10-4 ㎠ V-1 s-1, co-host devices with high concentration of ADN (>70%) exhibited low driving voltage and high current efficiency as compared to the devices without ADN. We obtained a device with a current efficiency of 3.6 cd/A, Commission International d’Eclairage coordinates of [0.618, 0.373] and peak λmax = 620 nm at a current density of 20 mA/㎠. This is a promising way of utilizing wide band gap material as the host to make red OLEDs, which will be useful in improving the electroluminescent performance of devices and simplifying the process of fabricating full color OLEDs.