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RISS 인기검색어
- 검색키워드
- 저자 : Khizar-ul Haq (검색결과 2 건)
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Khizar-ul Haq,Liu Shan-peng,M.A. Khan,X.Y. Jiang,Z.L. Zhang,Jin Cao,W.Q. Zhu 한국물리학회 2009 Current Applied Physics Vol.9 No.1
We demonstrated efficient red organic light-emitting diodes based on a wide band gap material 9,10-bis(2-naphthyl)anthracene (ADN) doped with 4-(dicyano-methylene)-2-t-butyle-6-(1,1,7,7-tetramethyl-julolidyl-9-enyl)-4H-pyran (DCJTB) as a red dopant and 2,3,6,7-tetrahydro-1,1,7,7,-tetramethyl-1H,5H,11H-10(2-benzothiazolyl)quinolizine-[9,9a,1gh]coumarin (C545T) as an assistant dopant. The typical device structure was glass substrate/ITO/4,4',4''-tris(N-3-methylphenyl-N-phenyl-amino)triphenylamine (m-MTDATA)/ N,N'-bis(naphthalene-1-yl)-N,N0-diphenyl-benzidine (NPB)/[ADN:Alq3]:DCJTB:C545T/Alq3/LiF/Al. It was found that C545T dopant did not by itself emit but did assist the energy transfer from the host (ADN) to the red emitting dopant via cascade energy transfer mechanism. The OLEDs realized by this approach significantly improved the EL efficiency. We achieved a significant improvement regarding saturated red color when a polar co-host emitter (Alq3) was incorporated in the matrix of [ADN:Alq3]. Since ADN possesses a considerable high electron mobility of 3.1 × 10-4 ㎠ V-1 s-1, co-host devices with high concentration of ADN (>70%) exhibited low driving voltage and high current efficiency as compared to the devices without ADN. We obtained a device with a current efficiency of 3.6 cd/A, Commission International d’Eclairage coordinates of [0.618, 0.373] and peak λmax = 620 nm at a current density of 20 mA/㎠. This is a promising way of utilizing wide band gap material as the host to make red OLEDs, which will be useful in improving the electroluminescent performance of devices and simplifying the process of fabricating full color OLEDs. We demonstrated efficient red organic light-emitting diodes based on a wide band gap material 9,10-bis(2-naphthyl)anthracene (ADN) doped with 4-(dicyano-methylene)-2-t-butyle-6-(1,1,7,7-tetramethyl-julolidyl-9-enyl)-4H-pyran (DCJTB) as a red dopant and 2,3,6,7-tetrahydro-1,1,7,7,-tetramethyl-1H,5H,11H-10(2-benzothiazolyl)quinolizine-[9,9a,1gh]coumarin (C545T) as an assistant dopant. The typical device structure was glass substrate/ITO/4,4',4''-tris(N-3-methylphenyl-N-phenyl-amino)triphenylamine (m-MTDATA)/ N,N'-bis(naphthalene-1-yl)-N,N0-diphenyl-benzidine (NPB)/[ADN:Alq3]:DCJTB:C545T/Alq3/LiF/Al. It was found that C545T dopant did not by itself emit but did assist the energy transfer from the host (ADN) to the red emitting dopant via cascade energy transfer mechanism. The OLEDs realized by this approach significantly improved the EL efficiency. We achieved a significant improvement regarding saturated red color when a polar co-host emitter (Alq3) was incorporated in the matrix of [ADN:Alq3]. Since ADN possesses a considerable high electron mobility of 3.1 × 10-4 ㎠ V-1 s-1, co-host devices with high concentration of ADN (>70%) exhibited low driving voltage and high current efficiency as compared to the devices without ADN. We obtained a device with a current efficiency of 3.6 cd/A, Commission International d’Eclairage coordinates of [0.618, 0.373] and peak λmax = 620 nm at a current density of 20 mA/㎠. This is a promising way of utilizing wide band gap material as the host to make red OLEDs, which will be useful in improving the electroluminescent performance of devices and simplifying the process of fabricating full color OLEDs.
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L. Zhang,J. Li,X.W. Zhang,D.B. Yu,H.P. Lin Khizar-ul-Haq,X.Y. Jiang,Z.L. Zhang 한국물리학회 2010 Current Applied Physics Vol.10 No.5
Low-voltage-drive ZnO thin-film transistors (TFTs) with room-temperature radio frequency magnetron sputtering SiO2 as the gate insulator were fabricated successfully on the glass substrate. The ZnO-TFT operates in the enhancement mode with a threshold voltage of 4.2 V, a field effect mobility of 11.2 ㎠/V s, an on/off ratio of 3.1 × 106 and a subthreshold swing of 0.61 V/dec. The drain current can reach to 1 mA while the gate voltage is only of 12 V and drain voltage of 8 V. The C–V characteristics of a MOS capacitor with the structure of ITO/SiO2/ZnO/Al was investigated. The carrier concentration ND in the ZnO active layer was determined, the calculated ND is 1.81 × 1016 cm−3, which is the typical value of undoped ZnO film used as the channel layer for ZnO-TFT devices. The experiment results show that SiO2 film is a promising insulator for the low voltage and high drive capability oxide TFTs.
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