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Cho, Seungho,Jang, Ji‐,Wook,Kong, Ki‐,jeong,Kim, Eun Sun,Lee, Kun‐,Hong,Lee, Jae Sung WILEY‐VCH Verlag 2013 Advanced functional materials Vol.23 No.19
<P><B>Abstract</B></P><P>Mixed metal oxide (MMO) nanostructures co‐doped uniformly by carbon and nitrogen are synthesized for the first time by annealing a terephthalate‐intercalated layered double hydroxide (LDH) under ammonia gas flow. The interlayer gallery of LDH allows effective access of NH<SUB>3</SUB> and the carbon source to its crystal lattice for a uniform nitrogen and carbon doping. Such co‐doped MMO exhibit significantly red‐shifted absorption spectra to visible light region relative to pure MMO. Photoelectrochemical water oxidation and incident‐photon‐to‐current‐conversion efficiency of LDH‐derived photocatalysts demonstrate that all the visible light absorption caused by the anion doping contributes to the photocatalytic activity over the entire absorbed wavelength range of <610 nm. Density functional theory calculations of electronic structures are performed to elucidate the possibility of bandgap narrowing upon nitrogen and carbon co‐doping on MMO structures.</P>
Ag/에폭시간 계면 접착력 향상을 위한 전해 실란 처리
공원효(Wonhyo Kong),박광렬(Gwangryeol Park),류호준(Hojun Ryu),배인섭(Inseob Bae),강성일(Sung-il Kang),최승회(Seunghoe Choe) 한국표면공학회 2023 한국표면공학회지 Vol.56 No.1
The reliability of leadframe-based semiconductor package depends on the adhesion between metal and epoxy molding compound (EMC). In this study, the Ag surface was electrochemically treated in a solution containing silanes in order to improve the adhesion between Ag and epoxy substrate. After electrochemical treatment, the thin silane layer was deposited on the Ag surface, whereby the peel strength between Ag and epoxy substrate was clearly improved. The improvement of peel strength depended on the functional group of silane, implying the chemical linkage between Ag and epoxy.
고신뢰성 데이터 유지 특성을 가진 3단자 사이리스터 랜덤 액세스 메모리
김향우(Hyangwoo Kim),조현수(Hyeonsu Cho),서명해(Myunghae Seo),이승호(Seungho Lee),공병돈(Byoung Don Kong),백창기(Chang-Ki Baek) 대한전자공학회 2021 대한전자공학회 학술대회 Vol.2021 No.6
Three-terminal thyristor random access memory(TRAM) is investigated in terms of gate-cathode voltage(VGC,ST) and anode-cathode voltage(VAC,ST) in the standby state to improve the retention characteristics and low-power operation. The device with the optimized VGC,ST of -0.4 V and VAC,ST of 0.55 V shows the continuous retention capability without refresh operation with a low standby current of 0.13 pA. In addition, the proposed array operation scheme can effectively minimize operation disturbances on unselected cells. Consequently, the three-terminal TRAM with the proposed array operation provides excellent retention and high-reliable memory configurations comparable with or surpass DRAM.