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Na Gyeong Geum(Na Gyeong Geum),Ju Hyeong Yu(Ju Hyeong Yu),So Jung Park(So Jung Park),Min Yeong Choi(Min Yeong Choi),Jae Won Lee(Jae Won Lee),Gwang Hun Park(Gwang Hun Park),Hae-Yun Kwon(Hae-Yun Kwon),J 한국자원식물학회 2022 한국자원식물학회지 Vol.35 No.6
Under the COVID-19 pandemic, interest in immune enhancement is increasing. Although the immune-enhancing activity of plants of the genus Hibiscus has been reported, there is no study on the immune-enhancing activity of H. syriacus. Thus, in this study, we investigated the immune-enhancing activity of Hibiscus syriacus leaves (HSL) in mouse macrophages, RAW264.7 cells, and immunosuppressed mice. HSL increased the production of immunostimulatory factors such as nitric oxide (NO), inducible nitric oxide synthase (iNOS), interleukin-1β (IL-1β), and tumor necrosis factor-α (TNF-α) and activated the phagocytosis in RAW264.7 cells. The HSL-mediated production of immunostimulatory factors was dependent on toll-like receptor 4 (TLR4), p38, and c-Jun N-terminal kinase (JNK) in RAW264.7 cells. In the immunosuppressed mouse model, HSL increased the spleen index, the levels of the cytokines, and the numbers of lymphocytes, neutrophils, and monocytes. Taken together, HSL may be considered to have immune-enhancing activity and be expected to be used as a potential immune-enhancing agent.
Na, Bock Soon,Jung, Soon-Won,Moon, Yu Gyeong,Park, Chan Woo,Park, Nae-Man,Oh, Ji-Young,Lee, Sang Seok,Koo, Jae Bon,Koo, Kyung-Wan American Scientific Publishers 2016 Journal of nanoscience and nanotechnology Vol.16 No.10
<P>Future stretchable electronic systems require memory devices that combine low power consumption with mechanical stretchability. We fabricated stretchable ferroelectric memory transistors (FMTs) on a polydimethylsiloxane substrate with patterned polyimide island structures by using an amorphous InGaZnO semiconductor and ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) (P(VDF-TrFE)) gate insulator. The FMTs exhibited a field-effect mobility of 7.5 cm(2)V(-1)s(-1) and a current on/off ratio of 10(7) at a relatively low operating voltage. Furthermore, the fabricated memory transistors showed no noticeable changes in their electrical performance for large strains of up to 50%.</P>