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The First Report of Fusarium solani Causing Wilting in Cnidium officinale in Korea
Kyeungmin Han,Hyoshin Lee,Yun Mi Park,Kwon Seok Jeon,Wonsu Choen,Chung Ryul Jung 한국식물병리학회 2021 식물병연구 Vol.27 No.2
Cnidium officinale is a perennial herb belonging to the family Umbelliferae. Its origin is China and is also dis- tributed in Korea and Japan. In 2017, a phenomenon of browning and wilting of leaves was discovered in the cultivation field of the National Institute of Forest Science, Suwon, Korea. The pathogens isolated from plants were consistent with Fusarium solani as a result of morphological examination and molecular phylogenetic analysis. This is the first record of F. solani on C. officinale in Korea.
차세대 웨어러블 전자시스템용 실리콘 나노선 트랜지스터 연구
임경민,김민석,김윤중,임두혁,김상식,Im, Kyeungmin,Kim, Minsuk,Kim, Yoonjoong,Lim, Doohyeok,Kim, Sangsig 한국진공학회 2016 진공 이야기 Vol.3 No.3
In future wearable electronic systems, 3-dimensional (3D) devices have attracted much attention due to their high density integration and low-power functionality. Among 3D devices, gate-all-around (GAA) nanowire transistor provides superior gate controllability, resulting in suppressing short channel effect and other drawbacks in 2D metal-oxide-semiconductor field-effect transistor (MOSFET). Silicon nanowires (SiNWs) are the most promising building block for GAA structure device due to their compatibility with the current Si-based ultra large scale integration (ULSI) technology. Moreover, the theoretical limit for subthreshold swing (SS) of MOSFET is 60 mV/dec at room temperature, which causes the increase in Ioff current. To overcome theoretical limit for the SS, it is crucial that research into new types of device concepts should be performed. In our present studies, we have experimentally demonstrated feedback FET (FBFET) and tunnel FET (TFET) with sub-60 mV/dec based on SiNWs. Also, we fabricated SiNW based complementary TFET (c-TFET) and SiNW complementary metal-oxide-semiconductor (CMOS) inverter. Our research demonstrates the promising potential of SiNW electronic devices for future wearable electronic systems.
Impact ionization and tunneling operations in charge-plasma dopingless device
Kim, Minsuk,Kim, Yoonjoong,Lim, Doohyeok,Woo, Sola,Im, Kyeungmin,Cho, Jinsun,Kang, Hyungu,Kim, Sangsig Elsevier 2017 Superlattices and microstructures Vol.111 No.-
<P><B>Abstract</B></P> <P>In this paper, we present the impact ionization and tunneling operations in a newly designed dopingless device. Our proposed device functions selectively—as either a <I>p</I>-channel impact-ionization MOSFET (<I>p</I>-IMOS) or an <I>n</I>-channel tunneling field-effect transistor (<I>n</I>-TFET)—according to the bias conditions. To realize the dopingless device, the charge-plasma effect is employed to induce <I>n</I>- or <I>p</I>-type regions without any doping process, by choosing an electrode metal with an appropriate work function. The band diagrams, <I>I–V</I> characteristics, subthreshold swings (<I>SS</I>), and carrier-concentration profiles of the device under the <I>p</I>-IMOS and <I>n</I>-TFET operation modes are analyzed in our study, using a commercial device simulator. The device yields an extremely low <I>SS</I> of 0.53 mV/dec under the <I>p</I>-IMOS operation mode. It also exhibits a low off-current of approximately 10<SUP>−14</SUP> A/μm and a high <I>I</I> <SUB>ON</SUB>/<I>I</I> <SUB>OFF</SUB> of approximately 10<SUP>8</SUP>, under the <I>n</I>-TFET operation mode.</P> <P><B>Highlights</B></P> <P> <UL> <LI> A charge-plasma effect is employed to realize our newly designed dopingless device. </LI> <LI> The single dopingless device possesses both <I>p</I>-IMOS and <I>n</I>-TFET characteristics. </LI> <LI> Without any doping, the device can act similar to a conventional doped device. </LI> </UL> </P>