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투명 유연 a-IGZO 박막트랜지스터의 제작 및 전기적 특성
박석형,조경아,오현곤,김상식,Park, Sukhyung,Cho, Kyoungah,Oh, Hyungon,Kim, Sangsig 한국전기전자재료학회 2016 전기전자재료학회논문지 Vol.29 No.2
In this study, we fabricate transparent and bendable a-IGZO (amorphous indium gallium zinc oxide) TFTs (thin-film transistors) with a-IZO (amorphous indium zinc oxide) transparent electrodes on plastic substrates and investigate their electrical characteristics under bending states. Our a-IGZO TFTs show a high transmittance of 82% at a wavelength of 550 nm. And these TFTs have an $I_{on}/I_{off}$ ratio of $1.8{\times}10^8$, a field effect mobility of $15.4cm^2/V{\cdot}s$, and a subthreshold swing of 186 mV/dec. The good electrical characteristics are retained even after bending with a curvature radius of 18 mm corresponding to a strain of 0.5% owing to mechanical durability of the transparent electrodes used in this study.
Channel과 gate 구조에 따른 산화물 박막트랜지스터의 전기적 특성 연구
공희성,조경아,김재범,임준형,김상식,Kong, Heesung,Cho, Kyoungah,Kim, Jaybum,Lim, Junhyung,Kim, Sangsig 한국전기전자학회 2022 전기전자학회논문지 Vol.26 No.3
In this study, we designed oxide thin-film transistors (TFTs) with dual gate and tri layered split channels, and investigated the structural effect of the TFTs on the electrical characteristics. The dual gates played a key role in increasing the driving current, and the channel structure of tri layers and split form contributed to the increase in the carrier mobility. The tri layered channels consisting of the a-ITGZO and two ITO layers inserted between the gate dielectric and a-ITGZO led to the increase in the on-current by using ITO layers with high conductivity, and the split channels lowered series resistance of the channels. Compared with the mobility (15 cm<sup>2</sup>/V·s) of the single gate a-ITGZO TFT, the mobility (134 cm<sup>2</sup>/V·s) of the dual gate tri-layer split channel TFT was remarkably enhanced by the structural effect.
전기방사로 제작된 산화물 나노사 열전 pn 커플의 제작 및 특성
이동훈,조경아,최진용,김상식,Lee, Donghoon,Cho, Kyoungah,Choi, Jinyoung,Kim, Sangsig 한국전기전자재료학회 2015 전기전자재료학회논문지 Vol.28 No.4
In this study, we propose a novel fabrication of an oxide-based lateral thermoelectric pn couple and investigate the characteristics of the thermoelectric couple. Electrospun ZnO and $LaSrCoO_3$ nanofibers are used as n- and p-legs of the couple, respectively. The Seebeck coefficients of the n- and p-type nanofibers and the pn couple are $-98.1{\mu}V/K$, $42.4{\mu}V/K$, and $118.8{\mu}V/K$, respectively. The thermoelectric couple generates an output voltage of $484.7{\mu}V$ at a temperature difference of 4.1 K.
칼코제나이드 나노입자와 유리섬유를 이용하여 제작된 열전모듈의 발전 특성
류호현,조경아,최진용,김상식,Ryu, Hohyeon,Cho, Kyoungah,Choi, Jinyoung,Kim, Sangsig 한국전기전자재료학회 2015 전기전자재료학회논문지 Vol.28 No.4
In this study, we fabricated a thermoelectric module made of nanoparticles (NPs) and glass fibers investigated its thermoelectric characteristics. P-type HgTe and n-type HgSe NPs synthesized by colloidal method were used as thermoelectric materials and glass fibers were used as spacers between the hot and cold electrodes of the thermoelectric module. In the module, the average Seebeck coefficients of the HgTe and HgSe NPs were 1260 and $-628{\mu}V/K$, respectively. The p-n module generated about a voltage of 11.9 mV and showed a power density of $1.6{\times}10^{-5}{\mu}W/cm^2$ at a temperature difference of 7.5 K.
김동원(Dong-Won Kim),조경아(Kyoungah Cho),김현석(Hyunsuk Kim),김상식(Sangsig Kim) 대한전기학회 2006 대한전기학회 학술대회 논문집 Vol.2006 No.7
Electrical characteristics of field-effect thin film transistors (TFTs) with p-channels of CdTe/CdHgTe core-shell nanocrystals are investigated in this paper. For the fabrication of bottom and top-gate TFTs, CdTe/CdHgTe nanocrystals synthesized by colloidal method are first dispersed on oxidized p? Si substrates by spin-coating, the dispersed nanoparticles are sintered at 150℃ to form the channels for the TFTs, and A1₂O₃ layers are deposited on the channels. A representative bottom-gate field-effect TFT with a bottom-gate SiO₂ layer exhibits a mobility of 0.21㎠/Vs and an Ion/Ioff ratio of 1.5×l0² and a representative top-gate field-effect TFT with a top-gate A1₂O₃ layer provides a field-effect mobility of 0.026㎠/Vs and an Ion/Ioff ratio of 2.5×10². A1₂O₃ was deposited for passivation of CdTe/CdHgTe core-shell nanocrystal layer, resulting in enhanced hole mobility, Ion/Ioff ratio by 0.25, 3×10³, respectively. The CdTe/CdHgTe nanocrystal-based TFTs with bottom- and top gate geometries are compared in this paper.
게이트 절연막 조성에 따른 a-ITGZO 박막트랜지스터의 전기적 특성 연구
공희성(Heesung Kong),조경아(Kyoungah Cho),김상식(Sangsig Kim) 한국전기전자학회 2021 전기전자학회논문지 Vol.25 No.3
본 연구에서는 HfO₂와 Al₂O₃ 비율을 조절하여 게이트 절연막을 구성하고, 게이트 절연막에 따른 a-ITGZO 박막트랜지스터의 전기적 특성을 분석하였다. HfO₂ 게이트 절연막, HfO₂와 Al2O₃ 비율이 2:1인 게이트 절연막, HfO₂와 Al₂O₃ 비율이 1:1인 게이트 절연막으로 구성된 a-ITGZO 박막트랜지스터의 전자이동도는 각각 32.3, 26.4, 16.8 cm²/Vs이고 SS 값은 각각 206, 160, 173 mV/dec 이며 히스테리시스 윈도우 폭은 각각 0.60, 0.12, 0.09 V 이었다. 게이트 절연막에서 Al₂O₃ 비율이 높아질수록 a-ITGZO 박막트랜지스터의 히스테리시스 윈도우 폭이 감소했는데, 이는 Al₂O₃ 비율이 높아질수록 게이트 절연막과 채널 박막 사이의 interface trap density가 감소했기 때문이다. In this study, we fabricated amorphous indium-tin-gallium-zinc-oxide thin-film transistors (a-ITGZO TFTs) with gate dielectrics of HfO₂ and the mixed layers of HfO₂ and Al₂O₃, and investigated the effect of gate dielectric on electrical characteristics of a-ITGZO TFTs. When only HfO₂ was used as the gate dielectric, the mobility and subthreshold swing (SS) were 32.3 cm²/Vs and 206 mV/dec. For the a-ITGZO TFTs with gate dielectric made of HfO₂ and Al₂O (2:1, 1:1), the mobilities and SS were 26.4 cm²/Vs (2:1), 16.8 cm²/Vs(1:1), 160 mV/dec (2:1) and 173 mV/dec (1:1). On the other hand, the hysteresis window shown in transfer curves of the a-ITGZO TFTs was lessened from 0.60 to 0.09 V by the increase of Al₂O₃ ratio in gate dielectric, indicating that the interface trap density between the gate dielectric and channel layer decreases due to Al₂O₃.
플라스틱 기판 위에 스핀 코팅으로 증착된 HgSe 나노입자 박막의 광전류 특성
변광섭(KwangSub Byun),조경아(Kyoungah Cho),김상식(Sangsig Kim) 대한전기학회 2009 대한전기학회 학술대회 논문집 Vol.2009 No.7
콜로이드 방법으로 합성한 HgSe 나노입자를 스핀코팅 방법을 이용하여 플라스틱 기판위에 HgSe 박막으로 형성하고 그 광전류특성을 633 ㎚ 파장의 빛을 이용하여 조사하였다. HgSe 나노입자 박막을 150 ℃에서 15분동안 열처리를 하였을 때 효율이 약 90 μ/A으로 열처리 전에 비해 대략 45배 증가하였다.
저온 열처리 공정에 따른 Ag₂Se 나노입자 박막의 열전특성
양승건(Seunggen Yang),조경아(Kyoungah Cho),윤정권(Junggwon Yun),최진용(Jinyong Choi),김상식(Sangsig Kim) 대한전기학회 2016 전기학회논문지 Vol.65 No.4
In this study, we synthesized Ag₂Se nanoparticles (NPs) in an aqueous solution and investigated the thermoelectric characteristics of Ag₂Se NPs thin films on plastic substrates. Regardless of thermal annealing treatment, all the Ag2Se NPs thin films show the negative Seebeck coefficients, indicating the n-type characteristics. As the annealing temperature increases, the electric conductivity increases while the Seebeck coefficient decreases. The electric conductivity of the thin film annealed at 180°C is larger by 106 times, compared with the as-prepared thin film, And the maximum power density for the thin film annealed at 180°C is calculated to be 44 μW/㎠.
쿨링패치 부착에 따른 태양광-열전 융합소자의 성능 연구
이재환(Jaehwan Lee),조경아(Kyoungah Cho),박윤범(Yoonbeom Park),김상식(Sangsig Kim) 한국전기전자학회 2021 전기전자학회논문지 Vol.25 No.4
본 연구에서는 태양광소자와 열전소자로 이루어진 에너지 융합 발전소자에 쿨링패치를 적용하고 에너지 융합 발전소자의 성능을 조사하였다. 쿨링패치를 열전소자의 뒷면에 부착하였을 때, 에너지 융합 발전소자의 상층에 위치한 태양광소자의 온도가 저하되고 열전소자 양단의 온도차는 증가되었다. 태양광 복사 조도를 200 W/m2부터 1000 W/㎡까지 증가시키면서 에너지 융합 발전소자의 성능을 측정해본 결과, 쿨링패치는 태양광의 조도가 증가할수록 에너지 융합 발전소자의 성능 향상에 효과적이었고 1000 W/㎡에서는 42.1 ㎽까지 융합소자의 최대 출력 전력이 증가하였다. 본 연구에서는 쿨링패치를 에너지융합 발전소자에 부착함으로써 에너지 융합 발전소자의 출력 전력이 27% 이상으로 증가하는 것을 확인하였다. In this study, we examine the availability of a cooling patch to enhance the output power of a hybrid energy device (HED) comprising a photovoltaic cell (PVC) and a thermoelectric generator (TEG). The cooling patch attached on the back of the TEG drops the temperature of the PVC via the TEG and makes a large thermal gradient across the TEG under irradiances in a range of 200 to 1000 W/㎡. The cooling patch is more effective for the output power of the HED as the irradiance increases, and it enhances the maximum output power of the HED to 42.1 ㎽ at an irradiance of 1000 W/㎡. The increment in the maximum output power reaches 27% owing to the attachment of the cooling patch that does not consume any power.