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김동원(Dong-Won Kim),조경아(Kyoungah Cho),김현석(Hyunsuk Kim),김상식(Sangsig Kim) 대한전기학회 2006 대한전기학회 학술대회 논문집 Vol.2006 No.7
Electrical characteristics of field-effect thin film transistors (TFTs) with p-channels of CdTe/CdHgTe core-shell nanocrystals are investigated in this paper. For the fabrication of bottom and top-gate TFTs, CdTe/CdHgTe nanocrystals synthesized by colloidal method are first dispersed on oxidized p? Si substrates by spin-coating, the dispersed nanoparticles are sintered at 150℃ to form the channels for the TFTs, and A1₂O₃ layers are deposited on the channels. A representative bottom-gate field-effect TFT with a bottom-gate SiO₂ layer exhibits a mobility of 0.21㎠/Vs and an Ion/Ioff ratio of 1.5×l0² and a representative top-gate field-effect TFT with a top-gate A1₂O₃ layer provides a field-effect mobility of 0.026㎠/Vs and an Ion/Ioff ratio of 2.5×10². A1₂O₃ was deposited for passivation of CdTe/CdHgTe core-shell nanocrystal layer, resulting in enhanced hole mobility, Ion/Ioff ratio by 0.25, 3×10³, respectively. The CdTe/CdHgTe nanocrystal-based TFTs with bottom- and top gate geometries are compared in this paper.
Hot-Walled PLD법을 이용한 은도핑된 나노선의 특성분석
김경원(Kyoungwon Kim),박동훈(Dong-Hoon Park),플락(Pulak Chandra Debnath),김상식(Sangsig Kim),이상렬(Sang Yeol Lee) 대한전기학회 2009 대한전기학회 학술대회 논문집 Vol.2009 No.11
1, 3 and 5 weight % Ag doped zinc oxide (ZnO) nanowires (NWs) were grown on the (0001) plane of sapphire substrate by hot-wall pulsed laser deposition (HW-PLD) with Au catalyst at 800℃. The process condition for the doped ZnO NW formation is optimized by adjusting the kinetic energy and the flux of the laser ablated particles by hot-wall control. Variation of structural and optical properties of various NWs are investigated depending on the growth kinetics by changing target to substrate distance scanning electron microscopy (SEM), transmittance electron microscopy (TEM) and photoluminescence (PL). PL spectra of the multiple doped NWs measured at different temperatures ranging from 13 to 300 K were studied experimentally and theoretically in order to investigate the p-type behavior indicated by the acceptor-bound excitons.
Dielectrophoresis 방법으로 제작한 Si 나노선과 ZnO 나노입자 필름 기반 p-n 이종접합 다이오드
김광은(Kwangeun Kim),이명원(Myeongwon Lee),윤정권(Junggwon Yun),김상식(Sangsig Kim) 대한전기학회 2011 전기학회논문지 Vol.60 No.1
Newly-developed fabrication of a p-n heterojunction diode constructed with a p-Si nanowire (NW) and an n-ZnO nanoparticle (NP) thin-film by the dielectrophoresis (DEP) technique is demonstrated in this study. With the bias of 20 Vp-p at the input frequency of 1 ㎒, the most efficient assembly of the n-ZnO NPs is shown for the fabrication of the p-n heterojunction diode with a p-Si NW. The p-n heterojunction diode fabricated in this study represents current rectifying characteristics with the turn on voltage of 1.1 V. The diode can be applied to the fabrication of optoelectrical devices such as photodetectors, light-emitting diodes (LEDs), or solar cells based on the high conductivity of the NW and the high surface to volume ratio of the NP thin film.
전기방사법으로 제작된 ZnS:Mn/PVP 하이브리드 나노사의 발광특성
김광은(Kwangeun Kim),조경아(Kyoungah Cho),곽기열(Kiyeol Kwak),윤창준(Changjoon Yoon),김상식(Sangsig Kim) 대한전기학회 2009 대한전기학회 학술대회 논문집 Vol.2009 No.7
ZnS:Mn 나노입자가 포함된 PVP 고분자 하이브리드 나노사를 전기방사법으로 제작하였다. 하이브리드 나노사의 표면 특성은 주사 전자 현미경으로 관측하였으며, 형광분광광도계와 공초점 주사 현미경 (CLSM)을 이용하여 하이브리드 나노사의 발광특성을 조사하였다. 순수한 PVP 나노사와 하이브리드 나노사의 photoluminescence (PL) 스펙트럼 비교를 통하여, 586 ㎚에서 관찰된 PL 피크는 ZnS:Mn 나노입자에서 기인되었음을 알 수 있었으며, CLSM을 이용하여 ZnS:Mn 나노입자의 발광을 이미지화 하였다.
김광은(Kwangeun Kim),이명원(Myeongwon Lee),윤정권(Junggwon Yoon),김상식(Sangsig Kim) 대한전기학회 2010 대한전기학회 학술대회 논문집 Vol.2010 No.7
Newly-developed fabrication of hybrid diodes constructed with a Si nanowire (NW) and ZnO nanoparticle (NP) thin film by dielectrophoresis (DEP) technique is demonstrated in this study. With the bias of 20 V<SUB>p-p</SUB> at the input frequency of 1 ㎒, the assembly of the ZnO NPs is most efficient for the fabrication of the hybrid diode composed of a Si NW and ZnO NP thin film. The hybrid diode fabricated in this study shows well-defined current rectifying characteristics with the turn on voltage of 1.1 V.
피드백 전계효과 트랜지스터에 대한 리뷰: 동작 메커니즘과 적용 분야
김민석,이경수,김상식,Kim, Minsuk,Lee, Kyungsoo,Kim, Sangsig 한국전기전자학회 2018 전기전자학회논문지 Vol.22 No.2
Since feedback field-effect transistors (FBFETs) have ideal switching characteristics resulting from feedback phenomenon caused by electrons and holes in the channel region, the researches about FBFET devices have been proposed and demonstrated worldwide recently. The device operated with novel principle can operate as a switching electronic device. Besides, because the hysteresis characteristics of the device by accumulated electrons and holes in channel region can be also utilized for memory applications, its application range is wide. In this paper, we cover various device structures of FBFET proposed until now and their operation mechanism, and then look into their applicable fields. 피드백 전계효과 트랜지스터는 채널 내부의 전자와 정공의 의해 발생하는 피드백 현상으로 이상적인 스위칭 특성을 갖기 때문에 최근 세계적으로 많은 연구가 진행되고 있다. 이 새로운 동작원리를 가지는 소자는 초저전력 스위칭 전자소자로 동작이 가능할 뿐만 아니라 채널 내부에 축적된 전자와 정공에 의한 히스테리시스 특성으로 메모리 소자로도 동작 가능하여 그 활용 범위가 넓다. 본 논문에서는 지금까지 제안된 다양한 구조의 피드백 전계효과 트랜지스터와 그 동작 메커니즘에 관해 확인하고 적용 가능 분야에 대해서 살펴본다.
차세대 웨어러블 전자시스템용 실리콘 나노선 트랜지스터 연구
임경민,김민석,김윤중,임두혁,김상식,Im, Kyeungmin,Kim, Minsuk,Kim, Yoonjoong,Lim, Doohyeok,Kim, Sangsig 한국진공학회 2016 진공 이야기 Vol.3 No.3
In future wearable electronic systems, 3-dimensional (3D) devices have attracted much attention due to their high density integration and low-power functionality. Among 3D devices, gate-all-around (GAA) nanowire transistor provides superior gate controllability, resulting in suppressing short channel effect and other drawbacks in 2D metal-oxide-semiconductor field-effect transistor (MOSFET). Silicon nanowires (SiNWs) are the most promising building block for GAA structure device due to their compatibility with the current Si-based ultra large scale integration (ULSI) technology. Moreover, the theoretical limit for subthreshold swing (SS) of MOSFET is 60 mV/dec at room temperature, which causes the increase in Ioff current. To overcome theoretical limit for the SS, it is crucial that research into new types of device concepts should be performed. In our present studies, we have experimentally demonstrated feedback FET (FBFET) and tunnel FET (TFET) with sub-60 mV/dec based on SiNWs. Also, we fabricated SiNW based complementary TFET (c-TFET) and SiNW complementary metal-oxide-semiconductor (CMOS) inverter. Our research demonstrates the promising potential of SiNW electronic devices for future wearable electronic systems.
DOE 법에 의한 Ga 첨가된 ZnO 박막의 공정조건 탐색
이득희(Deuk-Hee Lee),김상식(Sangsig Kim),이상렬(Sang Yeol Lee) 대한전기학회 2010 전기학회논문지 Vol.59 No.1
Design of experiment (DOE) method is employed for a systematic and highly efficient optimization of Ga-doped ZnO thin films synthesized by pulsed laser deposition (PLD) process. We sequentially adopted fractional-factorial design (FD) and central composite design (CCD) of the DOE methods. In fractional-FD stage, significant factors to make conductive electrode are found to target-substrate (T-S) distance and oxygen partial pressure. Moreover, correlation among the process factors is elucidated using surface profile modeling. Electrical properties of the GZO films grown on a glass substrate had been optimized to find that the lowest electrical resistivity of about 1.8´10?⁴Wcm which was acquired with the T-S distance and the oxygen pressure of 4 cm and 7 mTorr, respectively. During the DOE-fueled optimization process, the transparency of the GZO films is ensured higher than 85 %.