http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Recent progress of oxide-TFT-based inverter technology
Nomura Kenji 한국정보디스플레이학회 2021 Journal of information display Vol.22 No.4
Oxide semiconductor-based thin-film transistor (oxide-TFT) technology have gained significant attention since the innovation of n-channel oxide-TFT using ZnO and amorphous In–Ga–Zn–O (a-IGZO) channels because of their superior device properties including excellent electrical property such as high TFT mobility over >10 cm2/Vs and the low-cost manufacturability originating from the low-temperature processability. Already, n-channel a-IGZO-TFT is widely employed as a TFT pixel switching backplane for several high-performance active-matrix flat-panel displays, and oxide-TFT technology to date is well acknowledged as the best TFT technology for future device applications in the wide range area of electronics such as sensors, Internet of things (IoT), energy-harvesting, medical/bio-interface device, etc. Therefore, the development of large-scale circuit beyond discrete TFT device level becomes increasingly important and is vital to advance the next stage of oxide- TFT technology. In particular, developing oxide-TFT-based inverter device technology is the key for developing several digital and analog circuits. In this paper, the recent progress and challenges in oxide-TFT-based inverter technology, including unipolar NMOS, PMOS, CMOS, and CMOS-like inverters using ambipolar oxide-TFT, are reviewed.
Photofield-Effect in Amorphous In-Ga-Zn-O (a-IGZO) Thin-Film Transistors
Tze-Ching Fung,Chiao-Shun Chuangc,Kenji Nomura,Han-Ping David Shieh,Hideo Hosono,Jerzy Kanicki 한국정보디스플레이학회 2008 Journal of information display Vol.9 No.4
We studied both the wavelength and intensity dependent photo-responses (photofield-effect) in amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs). During the a-IGZO TFT illumination with the wavelength range from 460~660 nm (visible range), the off-state drain current (IDS_off) only slightly increased while a large increase was observed for the wavelength below 400 nm. The observed results are consistent with the optical gap of ~3.05eV extracted from the absorption measurement. The a-IGZO TFT properties under monochromatic illumination (λ=420nm) with different intensity was also investigated and IDS_off was found to increase with the light intensity. Throughout the study, the field-effect mobility (μeff) is almost unchanged. But due to photo-generated charge trapping, a negative threshold voltage (Vth) shift is observed. The mathematical analysis of the photofield-effect suggests that a highly efficient UV photocurrent conversion process in TFT off-region takes place. Finally, a-IGZO mid-gap density-of-states (DOS) was extracted and is more than an order of magnitude lower than reported value for hydrogenated amorphous silicon (a-Si:H), which can explain a good switching properties observed for a-IGZO TFTs.
Photofield-Effect in Amorphous In-Ga-Zn-O (a-IGZO) Thin-Film Transistors
Fung, Tze-Ching,Chuang, Chiao-Shun,Nomura, Kenji,Shieh, Han-Ping David,Hosono, Hideo,Kanicki, Jerzy The Korean Infomation Display Society 2008 Journal of information display Vol.9 No.4
We studied both the wavelength and intensity dependent photo-responses (photofield-effect) in amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs). During the a-IGZO TFT illumination with the wavelength range from $460\sim660$ nm (visible range), the off-state drain current $(I_{DS_off})$ only slightly increased while a large increase was observed for the wavelength below 400 nm. The observed results are consistent with the optical gap of $\sim$3.05eV extracted from the absorption measurement. The a-IGZO TFT properties under monochromatic illumination ($\lambda$=420nm) with different intensity was also investigated and $I_{DS_off}$ was found to increase with the light intensity. Throughout the study, the field-effect mobility $(\mu_{eff})$ is almost unchanged. But due to photo-generated charge trapping, a negative threshold voltage $(V_{th})$ shift is observed. The mathematical analysis of the photofield-effect suggests that a highly efficient UV photocurrent conversion process in TFT off-region takes place. Finally, a-IGZO mid-gap density-of-states (DOS) was extracted and is more than an order of magnitude lower than reported value for hydrogenated amorphous silicon (a-Si:H), which can explain a good switching properties observed for a-IGZO TFTs.
Nobuko Kojima,Tada Hayato,Akihiro Nomura,Soichiro Usui,Kenji Sakata,Kenshi Hayashi,Atsushi Nohara,Akihiro Inazu,Masa-aki Kawashiri,Masayuki Takamura 한국지질동맥경화학회 2024 지질·동맥경화학회지 Vol.13 No.1
ObjectiveSitosterolemia is a rare autosomal recessive disease caused by the deleterious variants of adenosine 5'-triphosphate (ATP)-binding cassette sub-family G member 5 (ABCG5) or ATP-binding cassette sub-family G member 8 (ABCG8). There are only few data on the pathogenicity of ABCG5 and ABCG8. This study aimed to propose a scheme for determining variant pathogenicity and to catalog the putative pathogenic variants in sitosterolemia. MethodsThis study enrolled 377 consecutive Japanese patients with hyper-low-density lipoprotein cholesterolemia (mean age: 46.5±19.8 years, with 192 men) who have targeted-sequenced data on ABCG5 or ABCG8 (among 21 Mendelian lipid genes for any dyslipidemias) and serum sitosterol levels at Kanazawa University Hospital from 2016 to 2021. Serum sitosterol levels were divided by 0.79 in patients treated with ezetimibe, accounting for the average reduction with this drug. ABCG5 or ABCG8 variants were defined as putative pathogenic if associated with serum sitosterol levels ≥5 µg/mL or homozygous if associated with serum sitosterol levels ≥10 µg/mL. ResultsTwenty-three ABCG5 or ABCG8 variants (16 missense, 2 nonsense, 2 frameshift, 2 deletion, and 1 splice mutation) were identified. Based on our definition, 11 putative pathogenic variants (median sitosterol level: 10.1 [6.5–17.1] µg/mL) were found in 36 individuals and 12 benign variants (median sitosterol: 3.5 [2.5–4.1] µg/mL) in 14 individuals. ConclusionThe scheme proposed for assessing the pathogenicity of genetic variations (ABCG5 and ABCG8) is useful. Using this scheme, 11 putative pathogenic, and 12 benign variants in ABCG5 or ABCG were classified.
Lee, Hyun-Taek,Kim, Ho-Jin,Kim, Chung-Soo,Gomi, Kenji,Taya, Minoru,Nomura, Shû,hei,Ahn, Sung-Hoon Elsevier 2017 Acta Biomaterialia: structure-property-function re Vol.57 No.-
<P><B>Abstract</B></P> <P>Biological materials are the result of years of evolution and possess a number of efficient features and structures. Researchers have investigated the possibility of designing biomedical structures that take advantage of these structural features. Insect shells, such as beetle shells, are among the most promising types of biological material for biomimetic development. However, due to their intricate geometries and small sizes, it is challenging to measure the mechanical properties of these microscale structures. In this study, we developed an in-situ testing platform for site-specific experiments in a focused ion beam (FIB) system. Multi-axis nano-manipulators and a micro-force sensor were utilized in the testing platform to allow better results in the sample preparation and data acquisition. The entire test protocol, consisting of locating sample, ion beam milling and micro-mechanical bending tests, can be carried out without sample transfer or reattachment. We used our newly devised test platform to evaluate the micromechanical properties and structural features of each separated layer of the beetle horn shell. The Young’s modulus of both the exocuticle and endocuticle layers was measured. We carried out a bending test to characterize the layers mechanically. The exocuticle layer bent in a brick-like manner, while the endocuticle layer exhibited a crack blunting effect.</P> <P><B>Statement of Significance</B></P> <P>This paper proposed an in-situ manipulation/test method in focused ion beam for characterizing micromechanical properties of beetle horn shell. The challenge in precise and accurate fabrication for the samples with complex geometry was overcome by using nano-manipulators having multi-degree of freedom and a micro-gripper. With the aid of this specially designed test platform, bending tests were carried out on cantilever-shaped samples prepared by focused ion beam milling. Structural differences between exocuticle and endocuticle layers of beetle horn shell were explored and the results provided insight into the structural advantages of each biocomposite structure.</P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>