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Photofield-Effect in Amorphous In-Ga-Zn-O (a-IGZO) Thin-Film Transistors
Fung, Tze-Ching,Chuang, Chiao-Shun,Nomura, Kenji,Shieh, Han-Ping David,Hosono, Hideo,Kanicki, Jerzy The Korean Infomation Display Society 2008 Journal of information display Vol.9 No.4
We studied both the wavelength and intensity dependent photo-responses (photofield-effect) in amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs). During the a-IGZO TFT illumination with the wavelength range from $460\sim660$ nm (visible range), the off-state drain current $(I_{DS_off})$ only slightly increased while a large increase was observed for the wavelength below 400 nm. The observed results are consistent with the optical gap of $\sim$3.05eV extracted from the absorption measurement. The a-IGZO TFT properties under monochromatic illumination ($\lambda$=420nm) with different intensity was also investigated and $I_{DS_off}$ was found to increase with the light intensity. Throughout the study, the field-effect mobility $(\mu_{eff})$ is almost unchanged. But due to photo-generated charge trapping, a negative threshold voltage $(V_{th})$ shift is observed. The mathematical analysis of the photofield-effect suggests that a highly efficient UV photocurrent conversion process in TFT off-region takes place. Finally, a-IGZO mid-gap density-of-states (DOS) was extracted and is more than an order of magnitude lower than reported value for hydrogenated amorphous silicon (a-Si:H), which can explain a good switching properties observed for a-IGZO TFTs.
Photofield-Effect in Amorphous In-Ga-Zn-O (a-IGZO) Thin-Film Transistors
Tze-Ching Fung,Chiao-Shun Chuangc,Kenji Nomura,Han-Ping David Shieh,Hideo Hosono,Jerzy Kanicki 한국정보디스플레이학회 2008 Journal of information display Vol.9 No.4
We studied both the wavelength and intensity dependent photo-responses (photofield-effect) in amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs). During the a-IGZO TFT illumination with the wavelength range from 460~660 nm (visible range), the off-state drain current (IDS_off) only slightly increased while a large increase was observed for the wavelength below 400 nm. The observed results are consistent with the optical gap of ~3.05eV extracted from the absorption measurement. The a-IGZO TFT properties under monochromatic illumination (λ=420nm) with different intensity was also investigated and IDS_off was found to increase with the light intensity. Throughout the study, the field-effect mobility (μeff) is almost unchanged. But due to photo-generated charge trapping, a negative threshold voltage (Vth) shift is observed. The mathematical analysis of the photofield-effect suggests that a highly efficient UV photocurrent conversion process in TFT off-region takes place. Finally, a-IGZO mid-gap density-of-states (DOS) was extracted and is more than an order of magnitude lower than reported value for hydrogenated amorphous silicon (a-Si:H), which can explain a good switching properties observed for a-IGZO TFTs.