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Eun-Seok Kim,Young-Gwang Kim,Wan-Kyu Joung,Hyun-Yul Shin,Chi-Woong Nho,Geun-Woo Song 한국작물학회 2008 한국작물학회 학술발표대회 논문집 Vol.2008 No.10
Chinese milkvetch(CM) has been cultivated as green manure source for environment friendly farming in southern area. This experiment was conducted to produce good quality rice through studying the changes of yield, quality and leaf colors as affected by the amount of CM biomass retuned to paddy field. We growed rice, transplanted in June 10 with cultivar dongjinilho, in four different plots retuned green manure with 0, 1.5, 3.0, and 4.5 ㎏ m-2 CM biomass in May 30. Nitrogen amounts were 5.5g by 1.5㎏CM biomass, 11.1g by 3.0㎏, and 16.6g by 4.5㎏ in late May. There were no different SPAD values among treatments in 10 days after transplanting. However, the more the CM biomass from 20 days after transplanting, the higher the SPAD values were. the plot of CM biomass to 3.0 ㎏ m-2 had same heading date but the plot of 4.5 ㎏ m-2 was one day late heading date as compared with the others. There were no different plant height, number of panicle, panicle length, number of leaf and ripening ratio among the CM biomass amounts. The higher the CM biomass amount, the more likely the plant was lodge. the plot retuned CM fresh biomass 1.5 ㎏ m-2 showed the higher rice yield than the plot retuned 3.0 and 4.5 ㎏ m-2 in 2006, but all plots had similar rice yields in 2007. There was no different whiteness of rice among all treatments . The more the CM biomass amount retuned to plot, the higher the protein content of rice.
NiSi2/Si (111) 계면에 대한 고분해능 투과전자현미경 연구
이은하,이정용,최치규 대한금속재료학회(대한금속학회) 1994 대한금속·재료학회지 Vol.32 No.11
When 200 Å-thick Ni films deposited on Si(111) at room temperature were in situ annealed at 650℃ for 20 minutes, epitaxial NiSi₂ layers were formed. Interfaces between NiSi₂ and Si(111) were observed using a high-resolution transmission electron microscopy. It has been known that the (111 ̄) sl facet formed on the A-NiSi₂/Si(111) interface. In addition to this, the (001)_(SI, A-NISI)₂, facet was found in the present study. On the B-NiSi₂/Si(111) interface, the formation of (111 ̄)SI//((11) ̄5)B-NISI₂ and ((11) ̄5)SI//(111 ̄)B-NISI₂ facets was found. In sample deposited 10 Å, Ni films and annealed at 500℃ for 3 minutes, nuclei of NiSi₂ were observed. Each nucleus had a hexagonal shape. The NiSi₂ nucleus grew with various facets in order to minimize the total interfacial energy of each nucleus.