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Single Crystal Growth and Magnetic Properties of Mn - doped Bi₂Se₃ and Sb₂Se₃
Jeongyong Choi,Hee-Woong Lee,Bong-Seo Kim,Sungyoul Choi,Jiyoun Choi,Sunglae Cho 한국자기학회 2004 Journal of Magnetics Vol.9 No.4
We have grown Mn-doped Bi₂Se₃ and Sb₂Se₃ single crystals using the temperature gradient solidification method. We report on the structural and magnetic propertis of Mn-doped Bi₂Se₃ and Sb₂Se₃ compound semiconductors. The lattice constants of several percent Mn-doped Bi₂Se₃ and Sb₂Se₃ were slightly smaller than those of the un-doped samples due to the smaller Mn atomic radius (1.40 Å) than those of Bi (1.60 Å) and Sb (1.45 Å). Mn-doped Bi₂Se₃ and Sb₂Se₃ showed spin glass and paramagnetic properties, respectively.
Magnetic properties of Mn-doped Bi<sub>2</sub>Te<sub>3</sub> and Sb<sub>2</sub>Te<sub>3</sub>
Choi, Jeongyong,Choi, Sungyoul,Choi, Jiyoun,Park, Yongsup,Park, Hyun-Min,Lee, Hee-Woong,Woo, Byung-Chul,Cho, Sunglae WILEY-VCH Verlag 2004 Physica status solidi. PSS. B, Basic solid state p Vol.241 No.7
<P>We have fabricated Mn-doped Bi<SUB>2</SUB>Te<SUB>3</SUB> and Sb<SUB>2</SUB>Te<SUB>3</SUB> single crystals by the vertical gradient solidification method. The compositions and crystal structures of Bi<SUB>2−x</SUB>Mn<SUB>x</SUB>Te<SUB>3</SUB> and Sb<SUB>2−x</SUB>Mn<SUB>x</SUB>Te<SUB>3</SUB> were determined using Electron Probe Micro-Analyzer (EPMA) and powder X-ray diffraction (XRD) patterns, respectively. Both crystal structures were rhombohedral with smaller lattice constants because of the smaller atomic radius of Mn than those of Bi and Sb. Based on the magnetization measurements, Mn-doped Bi<SUB>2</SUB>Te<SUB>3</SUB> and Sb<SUB>2</SUB>Te<SUB>3</SUB> compounds have ferromagnetic ordering at T<SUB>C</SUB> = 10 and 17 K, respectively. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)</P>
Choi, Jiyoun,Choi, Jeongyong,Choi, Sungyoul,Kim, Jongphil,Cho, Sunglae Japan Institute of Metals 2015 MATERIALS TRANSACTIONS Vol.56 No.9
<P> We have grown un-doped and transition metal (V, Cr, Mn, Fe, Co, Ni, Cu)-doped Ge bulk single crystals using the vertical gradient solidification method. The electrical resistivities of V, Ni, Co, and Fe-doped Ge crystals significantly increased, 10<SUP>4</SUP>∼10<SUP>5</SUP> times, between 5 and 100 K, which were 100 times larger than that of the commercial Ge resistance temperature device (RTD). The large variation of electrical resistance at low temperature arises from decreased carrier density and mobility at low temperature. The mobility reduction at low temperature might be caused by ionized impurity scattering. </P>