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Optical parameters of boron-doped ZnO nanorods grown by low-temperature hydrothermal reaction.
Kim, Soaram,Park, Hyunggil,Nam, Giwoong,Yoon, Hyunsik,Kim, Younggyu,Kim, Byunggu,Ji, Iksoo,Kim, Jong Su,Kim, Jin Soo,Kim, Do Yeob,Kim, Sung-O,Leem, Jae-Young American Scientific Publishers 2014 Journal of nanoscience and nanotechnology Vol.14 No.11
<P>Sol-gel spin-coating was used to deposit ZnO seed layers onto quartz substrates, and ZnO nanorods doped with various concentrations of B (i.e., BZO nanorods) ranging from 0 to 2.0 at% were hydrothermally grown on the ZnO seed layers. The effects of B doping on the absorption coefficient, optical band gap, Urbach energy, refractive index, extinction coefficient, single-oscillator energy, dispersion energy, average oscillator strength, average oscillator wavelength, dielectric constant, and optical conductivity of the hydrothermally grown BZO nanorods were investigated. The optical band gaps were 3.255, 3.243, 3.254, 3.258, and 3.228 eV for the nanorods grwon at 0, 0.5, 1.0, 1.5 and 2.0 at% B, respectively. B doping increased the Urbach energy from 40.7 to 65.1 meV for the nanorods grown at 0 and 2.0 at% B, respectively, and significantly affected the dispersion energy, the single-oscillator energy, the average oscillator wavelength, the average oscillator strength, the refractive index, and the optical conductivity of the hydrothermally grown BZO nanorods.</P>
Do Yeob Kim,Min Su Kim,Tae Hoon Kim,김건식,Hyun Young Choi,Min Young Cho,H. H. Ryu,W. W. Park,D. Y. Lee,김진수,Jong Su Kim,J. S. Son,J. Y. Leem 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.54 No.1
Self-assembled InAs quantum dots (QDs) embedded in GaAs/InxGa1-xAs strained layers with different In mole fractions were grown by using molecular beam epitaxy (MBE) and their optical properties were investigated by using photoluminescence (PL) spectroscopy. The InAs QDs were grown on GaAs(2 nm)/InxGa1-xAs(2 nm)×10 strained layers with x = 0.1, 0.32 and 0.52 and were capped with the same strained layer. The PL peak positions of the InAs QDs were red-shifted by increasing the In mole fraction of the GaAs/InxGa1-xAs strained layer. As a result, the emission wavelength of the QDs embedded in the GaAs/InxGa1-xAs strained layer with x = 0.52 was about 1.27um at room temperature. Compared to the PL spectra of the as-grown InAs QDs, the PL spectra of the InAs QDs grown on GaAs/In0:1Ga0:9As strained layers showed blue-shifts of about 100 meV with increasing annealing temperature up to 850℃ and signicant enhancements of the PL peak intensity.
MBE growth of ZnO Epilayers with Annealed Initial Zn Layers and its Properties
Ghun Sik Kim,Min Su Kim,Do Yeob Kim,Su Min Jeon,Min Young Cho,Hyun Young Choi,Jae Min Lim,Ji Hoon Kim,Dong-Yul Lee,Joo In Lee,Sung Dong Park,Eundo Kim,Myong Hyo Jung,Do-Weon Hwang,Jae-Young Leem 한국진공학회 2009 한국진공학회 학술발표회초록집 Vol.37 No.-
RF 플라즈마에 의해 생성된 산소 플라즈마의 발광 스펙트럼
김도엽,김민수,김태훈,김군식,최현영,조민영,전수민,박성동,김진하,김은도,황도원,임재영,Kim, Do-Yeob,Kim, Min-Su,Kim, Tae-Hoon,Kim, Ghun-Sik,Choi, Hyun-Young,Cho, Min-Young,Jeon, Su-Min,Park, Sung-Dong,Kim, Jin-Ha,Kim, Eun-Do,Hwang, Do-Weon 한국진공학회 2009 Applied Science and Convergence Technology Vol.18 No.2
본 연구에서는 ZnO 박막을 성장하기 위한 plasma-assisted molecular beam epitaxy (PAMBE)에 장착된 플라즈마건에 13.56 MHz의 rf 전력을 인가하였을 때 발생되는 산소 플라즈마의 발광 스펙트럼을 광발광 분광기(optical emission spectroscopy: OES)를 이용하여 조사하였다. 실험은 산소 가스 유량을 1 sccm에서 20 sccm, rf 전력을 25W에서 250 W 범위에서 플라즈마건의 오리피스의 직경을 각각 3 mm 와 5 mm로 달리하여 행해졌다. 산소 플라즈마를 발생시켰을 때 오리피스의 직경에 상관없이 전형적인 산소 플라즈마의 발광 스펙트럼이 관측되었다. 특히 776.8 nm와 843.9 nm에서 $3p^{5}P-3s^{5}S^{0}$, $3p^{3}P-3s^{3}S^{0}$ 천이에 기인하는 강한 산소 원자 발광선이 관측되었다. 산소 유량과 rf 파워가 증가함에 따라 776.8 nm와 843.9 nm의 발광 세기는 증가하였고, 776.8 nm의 스펙트럼 발광 세기의 증가율이 843.9 nm의 스펙트럼 발광 세기 증가율보다 컸다. 또한 오리피스 직경이 3 mm일 때가 5 mm일 때보다 산소 플라즈마가 더 안정적으로 발생하였다. We investigated optical emission of oxygen plasma discharged by 13.56 MHz radio frequency (rf) by using optical emission spectroscopy (OES). Experimental measurement is done at a range of oxygen flow rate of 1$\sim$20 seem, rf power of 25$\sim$250 W, and orifice 3 and 5 mm in diameter. When oxygen plasma was generated, typical emission spectra for oxygen plasma were observed regardless of diameter of orifice. Strong atomic emission lines are observe at 776.8 an 843.9 nm, corresponding to the $3p^{5}P-3s^{5}S^{0}$ and $3p^{3}P-3s^{3}S^{0}$ transitions, respectively. The emission intensity of line at 776.8 and 843.9 nm increased with increasing the oxygen flow rate and rf power. The increasing rate of emission intensity of 776.8 nm line was larger than that of 843.9 nm line. When the diameter of orifice was 3 mm, the oxygen plasma was more stably generated than orifice 5 mm in diameter.