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High Density Plasma 발생 장치의 구성 및 특성
황도원,손영호,김인수 경운대학교 산업기술연구소 1999 産業技術硏究論文誌 Vol.1 No.1(B)
High density plasma deposition system was organized using electron cyclotron resonance source, and its plasma properties were measured by using the Langmuir probe method. The ECR microwave plasma conditions could be controlled by means of mass flow controller and ECR microwave power according to the vacuum pressure of 2.3×10^-5 Torr to 5.2×10^-2 Torr. The ion density was increased with an increase of gas flow rate, and a decrease of the distance between ECR source and substrates. The electron temperatures were decreased with an increase of gas flow rate, and a decrease of the distance between ECR source and substrates. The estimated plasma potential was from 27.0V to 31.5V
Bridgman 방법으로 성장된 Cd0.8Mn0.2Te 의 전기적 특성연구
이정주,황도원,유인근,박영신 慶尙大學校 1991 論文集 Vol.30 No.2
본 실험에서 자체 제작한 전기로를 이용하여 Bridgman-Stockbarger 방법으로 Cd0.8Mn0.2Te를 성장시켜 전기적 특성을 조사하였는데, 주로 Hall effect 측정과 TSC측정으로 비저항, Hall 이동도, Hall계수, carrier 농도, ,trap energy level, 이탈 진동수, 포획 단면적 등을 구하였다.
손영호,김인수,황도원 경운대학교 산업기술연구소 1999 産業技術硏究論文誌 Vol.2 No.1
Al thin films were fabricated by using vacuum evaporation method and ion beam assisted deposition method. The effects of ion impact on Al thin films were characterized by the surface roughness and the SEM morphology. Al thin films fabricated by vacuum evaporation method were increasing surface roughness as increasing substrate temperature. Al thin films fabricated by ion beam assisted deposition method were decreasing hillock profiles and increasing density as increasing ion arrival ratio comparing to the Al thin films fabricated by vacuum evaporation method.
손영호,김인수,황도원 경운대학교 산업기술연구소 1999 産業技術硏究論文誌 Vol.2 No.1
Hydrogenated amorphous carbon(a-C:H) thin films were fabricated by electron cyclotron resonance plasma enhanced chemical vapor deposition method. The carbon and hydrogen structure of the a-C:H thin films have been investigated as functions of ECR power, CH₄/H₂ gas composition and flow rate, deposition time and DC self bias voltage. The bonding characteristics of the a-C:H thin films was analyzed using FTIR spectroscopy. The absorption peaks of the film were observed in the range of 2800∼3000 cm^-1. So bonding structure of a-C:H thin films as a function of the deposition parameter have sp³ bonding mostly and some sp² bonding. The structure of the a-C:H thin films changes CH₃ bonding to CH₂ or CH bonding as increasing deposition time. The reduction of the absorption peaks in the a-C:H thin films fabricated as a function of DC self bias voltage could be the result of dehydrogenation due to the breaking of the C-H bonds caused by increasing ion impact.
각분해 광전자 분광법을 이용한 Pd(111)의 전자구조 연구
황도원(Do Weon Hwang),강정수(Jeongsoo Kang),홍재화(Jae Hwa Hong),정재인(Jae In Jeong),문종호(Jong Ho Moon),김건호(Kun Ho Kim),이정주(Jeoung Ju Lee),이영백(Young Pak Lee),홍순철(Soon Cheol Hong),민병일(Byung Il Min) 한국진공학회(ASCT) 1996 Applied Science and Convergence Technology Vol.5 No.1
저에너지 전자회절(low energy electron diffraction: LEED)과 각분해 광전자 분광법(angle-resolved photoemission spectroscopy: ARPES)을 이용하여 깨끗한 Pd(111) 표면의 원자구조 및 전자구조를 연구하였다. LEED 무늬는 3-fold 대칭성을 가진 전형적인 fcc (111)면에 해당하는 깨끗한 무늬가 관찰되었다. Pd(111) 표면의 Γ-M', Γ-K, Γ-M의 세 대칭선 방향을 따라 ARPES측정을 행하였고, 이 결과들로부터 4d 전자들의 실험 띠구조를 구하였다. 실험 띠구조는 이론적으로 계산한 Pd bulk 띠구조와 대체로 일치하였으며, Pd(111) 표면의 일함수의 실험값 역시 띠구조 이론에 의해 예측된 값과 잘 일치하였다. 한편 실험 띠구조는 계산한 bulk 띠구조에 비하여 에너지 준위가 Brillouin영역의 k값에 따라 0.1 ~0.8eV 정도 페르미 준위에 가깝게 나타났으며, 실험 띠폭이 이론 띠폭보다 약 0.5eV 정도 좁게 나타났다. 이러한 차이점의 원인으로 국소화된 표면 4d 전자들의 영향 및 Pd 4d bulk 전자들간의 Coulomb 상호작용 효과가 고려되었다. We have investigated atomic and electronic structures of a clean Pd(111) surface using low energy electron diffraction (LEED) and angle-resolved photoemission spectroscopy (ARPES). A typical clean LEED pattern with a 3-fold symmetry has been observed, corresponding to that for an fcc (111) surface. ARPES measurements have been performed along the Γ-M', Γ-K, Γ-M symmetry lines, from which the experimental band structure of Pd(111) has been determined. The experimental band structure and work function of Pd(111) surface are found to agree well with the calculated band structure of bulk Pd and the calculated work function of Pd(111), respectively. However, the peak positions in the experimental band structure are located closer to the Fermi level than in the theoretical band structure by 0.1~0.8 eV, depending on the k-points in the Brilouin zone. In addition, the experimental band widths are narrower than the theoretical band widths by about 0.5 eV. The effects of the localized surface Pd 4d states and the Coulomb interaction between Pd 4d bulk electrons have been discussed as possible origins of such discrepancies between experiment and theory.