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RISS 인기검색어
- 검색키워드
- 저자 : D.K. Avasthi (검색결과 2 건)
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VLS-like growth and characterizations of dense ZnO nanorods grown by e-beam process
Agarwal, D C,Chauhan, R S,Avasthi, D K,Sulania, I,Kabiraj, D,Thakur, P,Chae, K H,Chawla, Amit,Chandra, R,Ogale, S B,Pellegrini, G,Mazzoldi, P Institute of Physics [etc.] 2009 Journal of Physics. D, Applied Physics Vol.42 No.3
<P>We present a new approach to produce ZnO nanorods in a reproducible manner at a temperature lower than other physical vapour deposition techniques, such as the vapour–liquid–solid mechanism. Arrays of well-aligned ZnO nanorods of uniform diameter have been synthesized on the Si substrate precoated with Au, using a simple electron beam evaporation method without the flow of any carrier gas. Scanning electron microscopy and atomic force microscopy characterizations show that as-grown nanorods are well aligned and uniform in diameter. X-ray diffraction measurements and clear lattice fringes in high-resolution transmission electron microscopy image show the growth of good quality polycrystalline hexagonal ZnO nanorods and a ⟨0 0 2⟩ growth direction. The polarization-dependent studies of near edge x-ray absorption fine structure (NEXAFS) are performed to investigate the electronic structure of the zinc and oxygen ions. The analysis of NEXAFS spectra at different angles of incidence of photon flux indicates the formation of ZnO nanorods having anisotropic behaviour of O and Zn states. The photoluminescence spectrum exhibits strong ultraviolet emission at 385 nm and the UV–visible spectrum also shows a band-gap transition around 390 nm indicating the good quality of nanorods. The catalytic growth mechanism of the ZnO nanorods is discussed on the basis of experimental results in this work.</P>
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R.R. Ahire,Abhay A. Sagade,S.D. Chavhan,V. Huse,F. Singh,D.K. Avasthi,D.M. Phase,Ramphal Sharma 한국물리학회 2009 Current Applied Physics Vol.9 No.3
Modified chemical bath deposited (MCBD) bismuth sulphide (Bi2S3) thin films’ structural, optical and electrical properties are engineered separately by annealing in air for 1 h at 300 ℃ and irradiating with 100 MeV Au swift heavy ions (SHI) at 5 × 1012 ions/㎠ fluence. It is observed that the band gap of the films gets red shifted after annealing and irradiation from pristine (as deposited) films. In addition, there is an increase in the grain size of the films due to both annealing and irradiation, leading to the decrease in resistivity and increase in thermoemf of the films. These results were explained in the light of thermal spike model. Modified chemical bath deposited (MCBD) bismuth sulphide (Bi2S3) thin films’ structural, optical and electrical properties are engineered separately by annealing in air for 1 h at 300 ℃ and irradiating with 100 MeV Au swift heavy ions (SHI) at 5 × 1012 ions/㎠ fluence. It is observed that the band gap of the films gets red shifted after annealing and irradiation from pristine (as deposited) films. In addition, there is an increase in the grain size of the films due to both annealing and irradiation, leading to the decrease in resistivity and increase in thermoemf of the films. These results were explained in the light of thermal spike model.
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