http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
- 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
- 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
RISS 인기검색어
- 검색키워드
- 저자 : Ramphal Sharma (검색결과 5 건)
- 무료
- 기관 내 무료
- 유료
-
Sharma, Ramphal,Mane, Rajaram S,Ghule, Gangri Cai Anil,Ham, Duk-Ho,Min, Sun-Ki,Lee, Seung-Eon,Han, Sung-Hwan Institute of Physics [etc.] 2009 Journal of Physics. D, Applied Physics Vol.42 No.5
<P>Room temperature synthesis of ordered-vacancy-compounds (OVCs) and copper indium diselenide (CuInSe<SUB>2</SUB>, CIS) by cation and anion exchange reactions of solid CdS thin films with CIS ionic solution in an alkaline chemical bath is reported. The growth parameters such as pH, deposition time and concentration of the solutions were optimized to achieve uniform thin films. Nanostructured CdS thin films (150 nm thick) prepared by chemical bath deposition are used for the deposition of OVC and CIS thin films. The ion exchange reaction between the CdS thin film and the CIS ionic solutions transforms the yellow colour CdS film into faint black, indicating the formation of OVC and CIS film. The resultant films were annealed in air at 200 °C for 1 h and further subjected to characterization using the x-ray diffraction, transmission electron microscopy, energy dispersive x-ray analysis, x-ray photoelectron spectroscopy, scanning electron microscopy, atomic force microscopy, optical absorption and electrical measurement techniques. The OVC and CuIn<SUB>3</SUB>Se<SUB>5</SUB> nanodomains are observed in chalcopyrite CIS thin films and these films have nanostructured morphology onto amorphous/nanocrystalline phase of CdS. The OVC–CIS films are p-type with a band gap energy of 1.453 eV.</P>
-
디스판데 니샤드,Ramphal Sharma 한국물리학회 2008 Current Applied Physics Vol.8 No.2
Tin oxide thin lms were deposited by a novel technique called as modied-SILAR. The preparative parameters were optimized toobtain good quality thin lms. As-deposited lms were annealed in O2 atmosphere for 1 h at 500.C. The annealed lms were irradiatedusing Au8+ ions with energy of 100 MeV at dierent uencies of 1· 1011,1· 1012,5· 1012 and 1 · 1013 ions/cm2 using tandem pelletronaccelerator. The irradiation-induced modications in tin oxide thin lms were studied using XRD, AFM, optical band gap, photolumi-nescence andIV measurements. XRD studies showed formation of tin oxide with tetragonal structure. AFM revealed uniform depo-sition of the material with increase in grain size after irradiation. Decrease in band gap from 3.51 eV to 2.82 eV was seen with increases inuency. A decrease in PL intensity, and an additional peak was observed after irradiation.IV measurements showed a decrease in resis-tance with uency.
-
Y.G. Gudage,Ramphal Sharma 한국물리학회 2010 Current Applied Physics Vol.10 No.4
Cadmium selenide (CdSe) thin films have been electrochemically deposited on the stainless steel (SS) and fluorine-doped tin oxide (FTO) coated glass substrates at room temperature (27℃). The growth kinetics of CdSe thin films was studied by using cyclic voltammetry and chronoamperometry with variation in the pH of the electrolytic bath. In addition, the influence of the substrate on the microstructural properties of CdSe is plausibly explained. The photoelectrochemical (PEC) characterization of the film has been carried out to optimize the preparative parameters. X-ray diffraction data reveal growth of the cubic phase with preferential orientation along (1 1 1) direction. Compositional analysis of the film shows nearly stoichiometric film formation at pH 2.7. Uniform film formation with nano-sized grains was seen from SEM images. Optical absorption studies reveal that the pH of the electrolytic solution has a significant effect on the band gap of the film. PEC study revealed that CdSe film deposited at pH 2.7 on SS substrate showed better photosensitivity as compared to the film deposited on FTO coated glass.
-
Room-temperature gas sensing studies of polyaniline thin films deposited on different substrates
Deshpande, N G,Gudage, Y G,Devan, R S,Ma, Y R,Lee, Y P,Sharma, Ramphal Institute of Physics Publishing 2009 Smart materials & structures Vol.18 No.9
<P>Polyaniline thin films, doped with an inorganic acid (HCl), on glass and Si substrates were directly synthesized by an <I>in situ</I> polymerization technique. Studies on the surface morphology as well as topography proved that the film surface is evolved differently on different substrates. The formation of PANI on glass and Si substrates was confirmed by optical and infrared spectroscopy, respectively. Different surface characteristics for different substrates showed a strong effect on the gas sensing properties of these films. The porous fibril morphology on the Si substrate leads to significantly faster and more responsive sensing phenomena.</P>
-
R.R. Ahire,Abhay A. Sagade,S.D. Chavhan,V. Huse,F. Singh,D.K. Avasthi,D.M. Phase,Ramphal Sharma 한국물리학회 2009 Current Applied Physics Vol.9 No.3
Modified chemical bath deposited (MCBD) bismuth sulphide (Bi2S3) thin films’ structural, optical and electrical properties are engineered separately by annealing in air for 1 h at 300 ℃ and irradiating with 100 MeV Au swift heavy ions (SHI) at 5 × 1012 ions/㎠ fluence. It is observed that the band gap of the films gets red shifted after annealing and irradiation from pristine (as deposited) films. In addition, there is an increase in the grain size of the films due to both annealing and irradiation, leading to the decrease in resistivity and increase in thermoemf of the films. These results were explained in the light of thermal spike model. Modified chemical bath deposited (MCBD) bismuth sulphide (Bi2S3) thin films’ structural, optical and electrical properties are engineered separately by annealing in air for 1 h at 300 ℃ and irradiating with 100 MeV Au swift heavy ions (SHI) at 5 × 1012 ions/㎠ fluence. It is observed that the band gap of the films gets red shifted after annealing and irradiation from pristine (as deposited) films. In addition, there is an increase in the grain size of the films due to both annealing and irradiation, leading to the decrease in resistivity and increase in thermoemf of the films. These results were explained in the light of thermal spike model.
연관 검색어 추천
이 검색어로 많이 본 자료
활용도 높은 자료
