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- 저자 : S.D. Chavhan (검색결과 2 건)
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Effect of temperature on stacking orientations of zinc phthalocyanine thin films.
Senthilarasu, S,Baek, Su-Jin,Chavhan, S D,Lee, J,Lee, Soo-Hyoung American Scientific Publishers 2008 Journal of Nanoscience and Nanotechnology Vol.8 No.10
<P>This paper reports the structural and optical properties of zinc phthalocyanine (ZnPc) thin films, prepared by thermal evaporation method, and their stacking dependence on the substrate temperature. The thickness of the films was measured by a quartz crystal monitor. X-ray diffraction analysis of the vacuum evaporated ZnPc films identified a phase transformation of metastable alpha-ZnPc phase to stable beta-ZnPc phase due to variation in the substrate temperature. The crystallite size (D), dislocation density (delta) and strain (epsilon) were calculated. The transmittance and absorbance spectra were recorded in the wavelength range 300-2500 nm using a UV-vis spectrophotometer. As the temperature was increased from room temperature to 200 degrees C, the band gap energy was decreased from 1.82 eV to 1.67 eV. The phase transformation was also confirmed by optical studies.</P>
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R.R. Ahire,Abhay A. Sagade,S.D. Chavhan,V. Huse,F. Singh,D.K. Avasthi,D.M. Phase,Ramphal Sharma 한국물리학회 2009 Current Applied Physics Vol.9 No.3
Modified chemical bath deposited (MCBD) bismuth sulphide (Bi2S3) thin films’ structural, optical and electrical properties are engineered separately by annealing in air for 1 h at 300 ℃ and irradiating with 100 MeV Au swift heavy ions (SHI) at 5 × 1012 ions/㎠ fluence. It is observed that the band gap of the films gets red shifted after annealing and irradiation from pristine (as deposited) films. In addition, there is an increase in the grain size of the films due to both annealing and irradiation, leading to the decrease in resistivity and increase in thermoemf of the films. These results were explained in the light of thermal spike model. Modified chemical bath deposited (MCBD) bismuth sulphide (Bi2S3) thin films’ structural, optical and electrical properties are engineered separately by annealing in air for 1 h at 300 ℃ and irradiating with 100 MeV Au swift heavy ions (SHI) at 5 × 1012 ions/㎠ fluence. It is observed that the band gap of the films gets red shifted after annealing and irradiation from pristine (as deposited) films. In addition, there is an increase in the grain size of the films due to both annealing and irradiation, leading to the decrease in resistivity and increase in thermoemf of the films. These results were explained in the light of thermal spike model.
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