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- 저자 : V. Huse (검색결과 2 건)
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Structural studies of Mn doped ZnO nanoparticles
B.N. Dole,V.D. Mote,V.R. Huse,Y. Purushotham,M.K. Lande,K. M. Jadhav,S.S. Shah 한국물리학회 2011 Current Applied Physics Vol.11 No.3
Mn substituted ZnO nanoparticles with compositional formula Zn_(1-x)Mn_xO where x = 0.00, 0.04 and 0.08were synthesized by sol-gel route. All the samples sintered at 650 ℃ for 12 h in a furnace followed by furnace cooling up to room temperature. X-ray diffraction (XRD) studies shows the presence of hexagonal crystal structure as same as parent compound (ZnO) in all samples. The lattice parameters ‘a’ and ‘c’were determined from XRD data and found that they increase linearly with the Mn content, which suggests that doped Mn ions go to Zn sites. Grain size, X-ray density and Atomic packing fraction (APF)were evaluated using XRD data and found that grain size increases while X-ray density and Atomic packing fraction (APF) decreases with dopant concentration increases. The functional groups and chemical interactions of Mn substituted Zinc oxide samples were also determined at various peaks using FTIR data and observed the presence of function groups in the samples. Results of such an investigation presented in this paper.
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R.R. Ahire,Abhay A. Sagade,S.D. Chavhan,V. Huse,F. Singh,D.K. Avasthi,D.M. Phase,Ramphal Sharma 한국물리학회 2009 Current Applied Physics Vol.9 No.3
Modified chemical bath deposited (MCBD) bismuth sulphide (Bi2S3) thin films’ structural, optical and electrical properties are engineered separately by annealing in air for 1 h at 300 ℃ and irradiating with 100 MeV Au swift heavy ions (SHI) at 5 × 1012 ions/㎠ fluence. It is observed that the band gap of the films gets red shifted after annealing and irradiation from pristine (as deposited) films. In addition, there is an increase in the grain size of the films due to both annealing and irradiation, leading to the decrease in resistivity and increase in thermoemf of the films. These results were explained in the light of thermal spike model. Modified chemical bath deposited (MCBD) bismuth sulphide (Bi2S3) thin films’ structural, optical and electrical properties are engineered separately by annealing in air for 1 h at 300 ℃ and irradiating with 100 MeV Au swift heavy ions (SHI) at 5 × 1012 ions/㎠ fluence. It is observed that the band gap of the films gets red shifted after annealing and irradiation from pristine (as deposited) films. In addition, there is an increase in the grain size of the films due to both annealing and irradiation, leading to the decrease in resistivity and increase in thermoemf of the films. These results were explained in the light of thermal spike model.
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