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Diamond 박막 성장에 미치는 Si 표면 영향의 AES에 의한 연구
이철로(C. R. Lee),신용현(Y. H. Shin),임재영(J. Y. Leem),정광화(K. H. Chung),천병선(B. S. Chun) 한국진공학회(ASCT) 1993 Applied Science and Convergence Technology Vol.2 No.2
Si 기판 표면상태 변화와 관련된 핵생성 자유에너지 증가에 따른 다이아몬드 박막성장 거동을 관찰하였다. 표면 연마조건 변화에 따른 3가지 기판(A-Si, B-Si, C-Si) 위에 동일한 성장조건으로 다이아몬드를 성장하였으며, 이때 형상인자와 관련된 자유에너지 관계는 ΔG_(A-Si)<ΔG_(B-Si)<ΔG_(C-Si)이다. AES, SEM, XRD, RHEED에 의해 각각의 박막 A, B, C를 조사한 결과, 핵생성 자유에너지가 가장 적은 A 박막은 (100) (110) 면이 지배적인 고품위 다이아몬드 박막이다. 자유에너지가 A에 비해 다소 적은 B 박막은 (111) 면이 지배적인 8면체 다이아몬드 박막이고, 자유에너지가 가장 적은 C 박막은 흑연이 많이 함유된 구상의 다이아몬드이다. The effect of nucleation free energy related to Si surface states on diamond film growth behavior has been studied. At first, the three kinds of diamond thin films (A, B, C) were deposited on various Si substrates (A-Si, B-Si, C-Si) whose surfaces were polished with 1 ㎛ diamond paste, 6 ㎛ Al₂O₃ powder and 12 ㎛ Al₂O₃ powder respectively. And then, relative nucleation free energy calculated is ΔG_(A-Si)<ΔG_(B-Si)<ΔG_(c-Si) Although there are some difference in grain size, shape and nucleation site, the thin films on A-Si and B-Si were diamond including a small amount of DLC which was confirmed by AES, SEM, XRD and RHEED. Namely, the diamonds of films (B) were not nucleated in scratches but in dents and larger in grain size compare with the film (C) of which diamond were nucleated not only scratches but also dents. And, the sphere diamond which is not general shape was grown on C-Si. After all, the sphere was turned out to be the diamond including much graphite as a result of the AES in situ depth profiling. Consequently, the diamond shape and quality grown on Si were changed from the crystal which the (100) and (110) planes were predominent to the crystal in which (111) plane was predominent, and next to sphere shape diamond including much graphite according as the nucleation free energy increases.
대장 선종과 암의 동시성 병변에서 K-ras 유전자의 돌연변이 및 k-Ras, p16, Cyclin D1과 p53 단백질의 발현
오용열 ( Y. L. Oh ),전훈재 ( H. J. Chun ),박동규 ( D. K. Park ),박재홍 ( J. H. Park ),박철희 ( C. H. Park ),진윤태 ( Y. T. Jeen ),이홍식 ( H. S. Lee ),이상우 ( S. W. Lee ),엄순호 ( S. H. Um ),최재현 ( J. H. Choi ),김창덕 ( C. D. Kim 대한소화기학회 2002 대한소화기학회 춘계학술대회 Vol.2002 No.-
<Background> The colorectal adenoma-carcinoma sequence represents a well-known paradigm for the sequential development of cancer driven by the accumulation of genomic defects, Although the colorectal adenoma-carcinoma sequence is well established, the stu
EACVD로 Si 위에 성장한 다이아몬드 박막의 계면 접합강도
이철로(C. R. Lee),박재홍(J. H. Park),임재영(J. Y. Leem),김관식(K. S. Kim),천병선(B. S. Chun) 한국진공학회(ASCT) 1993 Applied Science and Convergence Technology Vol.2 No.3
필라멘트와 Si 기판 사이의 기전력을 20, 80, 140, 200V로 증가시키면서 EACVD에 의하여 성장된 다이아몬드 박막에 대하여 다이아몬드/Si 계면분석 및 계면강도를 측정하였다. 주사형전자현미경(SEM), 고분해능투과형전자현미경(HRTEM), 오제이전자분석기(AES)에 의해 계면상태를 분석한 결과, 기전력 증가에 따라 활성탄화수소 이온(C_mH_n^-) 에너지가 증가되어져 C_mH_n^-이 Si내로 침투(Impringement)가 증가되고 침투된 높은 에너지의 C_mH_n^-이 Si과 화학결합하여 생성되는 SiC층 깊이 및 농도 분포도 증가된다. 풀 시험(Pull test)에 의한 계면강도 측정 결과, SiC층 깊이 및 농도분포가 증가할수록 계면강도가 증가하였다. 관찰된 파면과 파면의 X-선 메핑 결과 및 HRTEM과 AES에 의한 분석 결과, 기전력 증가에 따라 공극율이 적고 치밀한 다이아몬드 박막이 성장된다. 그리고 생성되는 SiC층 농도 및 깊이 분포가 증가함에 따라 다이아몬드/Si 계면이 강화되고, 상대적으로 파괴는 다이아몬드/Si 계면이 아닌 SiC층이나 Si 내부에서 발생된다. 결국, 기전력을 증가하여 활성탄화수소 이온의 에너지를 증가함으로써 계면강도가 우수하며 공극율이 매우 적고 치밀한 다이아몬드 박막을 성장할 수 있다. The diamond thin films on Si which 20 V (Film A), 80 V (Film B), 140 V (Film C) and 200 V (Film D) had been applied respectively between filament and Si substrates during growth were analysed with SEM, HRTEM and AES. Judging from those results, the diffusion of carbon increased due to the increment of the energy of active hydrocarbon ion (C_mH_n^-) and also the SiC layers were formed as the result of chemical bonding of C_mH_n^- with Si. The amount and depth of SiC layer increased as the potentials increased. The interface adhesion of these films were also measured with Pull test which is the most accurate and general method in evaluation of thin film adhesion. The film (D) which SiC was formed most deeply and widely exhibited the most adhesion in diamond/Si interface. Meanwhiles, the film (A) which had most shallow SiC layer and low SiC concentration exhibited very weak adhesion compare to film (D). Judging from the observation and X-Ray Mapping of fracture surface, the film (D) was fractured in Si below interface and the film (A) was fractured in diamond thin film/Si interface. Also, there are many voids in film (A) and a little in film (D). Conclusively, it is possible to grow the high strength and condensed diamond thin film without pores because the energy of active hydrocarbon ion was increased by elevation of potentials during growth.
Hui, K.S.,Hui, K.N.,Dinh, D.A.,Tsang, C.H.,Cho, Y.R.,Zhou, W.,Hong, X.,Chun, H.H. Elsevier Science 2014 Acta materialia Vol.64 No.-
A green chemical approach to control the dimensions of Ag nanoparticle-decorated graphene oxide (AgNP-GO) composites was proposed by in situ ultrasonication of a mixture of AgNO<SUB>3</SUB> and GO solution with the assistance of vitamin C acting as an environmentally friendly reducing agent at room temperature. The AgNP-GO composites were characterized by X-ray diffraction, transmission electron microscopy, energy-dispersive spectroscopy, Fourier transform infrared spectroscopy, Raman spectra and ultraviolet-visible absorption spectra. The results demonstrated that Ag nanoparticles with an average diameter of ~15nm were uniformly dispersed on the surface of GO nanosheets by in situ ultrasonication of 1min with vitamin C. Increasing the ultrasonication times resulted in Ag nanoparticles with tunable dimensions ranging from 15 to 55nm being formed on the surface of GO nanosheets. The amount of silver nitrate and the ultrasonication time play a key role in the control of the dimension of Ag nanoparticles on GO, and a formation mechanism of the as-prepared AgNP-GO composites is proposed. This study provides a guide to controlling the dimensions of AgNP-GO composites, which may hold promise as advanced materials for various analytical applications such as catalysis, sensors and microchips.
소듐고속로 핵연료집합체 측면 오리피스 주입구 난류유동의 전산유체역학 해석
인왕기(W. K. In),정영신(Y. S. Jeong,),이찬(C. Lee),신창환(C. H. Shin),오동석(D. S. Oh),전태현(T. H. Chun),천진식(J. S. Cheon) 대한기계학회 2015 대한기계학회 춘추학술대회 Vol.2015 No.11
A liquid sodium is used as coolant in sodium fast reactor(SFR). The reactor coolant pump supplies sodium coolant into a fuel assembly through the inlet chamber with a side orifice. Nine(9) orifices are used in the inlet chamber in three longitudinal and azimuthal directions. This CFD study investigates turbulent flow structure in the inlet chamber and estimate the pressure loss coefficient at the side orifice. The Reynolds number for this CFD simulation is 104, 105 and 2x105 based on the hydraulic diameter and bulk velocity in the orifice. Turbulence models used are the standard k-ε model, SAS-SST model, SSG Reynolds stress model and Large Eddy Simulation(LES). A unsteady flow simulation was performed to more accurately analyze the complex turbulent flow in the inlet chamber with the 9 side orifices. This paper presents the CFD predictions of turbulent flow distribution in the inlet chamber of SFR fuel assembly and the loss coefficient of side orifice.
이석윤,허명수,손동수,황병철,조동율,천희곤,오태희,송병무,송한식,이우형,이광철,김오규,권영규,구경완 경북대학교 센서기술연구소 1995 센서技術學術大會論文集 Vol.6 No.1
The thin film growing processes and the photolithographic techniques involved in the manufacturing of thin film magnetic heads are discussed. The thin film heads are composed of the hundreds of electromagnetic transducers on a single wafer and are made of Al_(2)O_(3)-TiC substrate on which Al_(2)O_(3) film as a insulating, protective layer and gap material, Cu film as a multi-turn coil and permalloy film as a magnetic material are deposited and patterned. In this article we will introduce how the thin film heads is fabricated and differ from an integrated semiconductor device. An effort is devoted to develop the formation of PR frame using a lithography process and finally the thin film heads manufacturing technologies.
정광철,주경,전윤석,오근호,김의훈,이석근,Chung, K.C.,Joo, K.,Chun, Y.S.,Orr, K.K.,Kim, E.H.,Lee, S.K. 한국세라믹학회 1989 한국세라믹학회지 Vol.26 No.2
Al2O3/SiC composite-material was synthesized by the birth-spread mechanism through the carbothermal reduction reaction of SiO2 in Ha-Dong Kaolin with carbon powder under H2 gas atmosphere at 1300~140$0^{\circ}C$. Average diameter of synthesized SiC whiskers were 1${\mu}{\textrm}{m}$ and aspect ratio (c/a) was 10~100. Al2O3 particles and SiC whiskers were mixed homogeneously in the reacted pellet.