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Wanfen Pu,Chao Shen,Bing Wei,Yang Yang,Yibo Li 한국공업화학회 2018 Journal of Industrial and Engineering Chemistry Vol.61 No.-
To assist in understanding the progress of polysaccharide biopolymers in EOR, this review collects and summarizes the available data for the first time and thoroughly discusses the structure–property–EOR performance relationship from flask to field scale application. Attentions were given to xanthan, scleroglucan, hydroxyethylcellulose (HEC), carboxymethycellulose (CMC), welan gum, guar gum, schizophyllan, and other newly developed family members. This review provides a synopsis of EOR polysaccharides, which are rapidly emerging as eco-friendly and tough injectants compared to synthetic polymers.
QTLs of Cold Tolerance-Related Traits at the Booting Stage for NIL-RILs in Rice Revealed by SSR
Ya Wen Zeng,Shu Ming Yang,Hong Cui,Xiao Juan Yang,Li Ming Xu,Juan Du,Xiao Ying Pu,Zi Chao Li,Zai Quan Cheng,Xing Qi Huang 한국유전학회 2009 Genes & Genomics Vol.31 No.2
QTLs for cold tolerance-related traits at the booting stage using balanced population for 1525 recombinant inbred lines of near-isogenic lines (viz. NIL-RILs for BC5F3 and BC5F4 and BC5F5) over 3 years and two locations by backcrossing the strongly cold-tolerant landrace (Kunmingxiaobaigu) and a cold-sensitive cultivar (Towada) was analyzed. In this study, 676 microsatellite markers were employed to identify QTLs conferring cold tolerance at booting stage. Single marker analysis revealed that 12 markers associated with cold tolerance on chromosome 1, 4 and 5. Using a LOD significance threshold of 3.0, compositive interval mapping based on a mixed linear model revealed eight QTLs for 10 cold tolerance-related traits on chromosomes 1, 4, and 5. They were tentatively designated qCTB-1-1, qCTB-4-1, qCTB-4-2, qCTB-4-3, qCTB-4-4, qCTB-4-5, qCTB-4-6, and qCTB-5-1. The marker intervals of them were narrowed to 0.3-6.8 cM. Genetic distances between the peaks of the QTL and nearest markers varied from 0 to 0.04 cM. We were noticed in some traits associated cold tolerance, such as qCTB-1-1 for 5 traits (plant height, panicle exsertion, spike length, blighted grains per spike and spikelet fertility), qCTB-4-1 for 8 traits (plant height, node length under spike, leaf length, leaf width, spike length, full grains per spike, total grains per spike and spikelet fertility), qCTB-4-2 for 3 traits (spike length, full grains per spike and spikelet fertility), qCTB-5-1 for 5 traits (plant height, panicle exsertion, blighted grains per spike, full grains per spike and spikelet fertility). The variance explained by a single QTL ranged from 0.80 to 16.80%. Three QTLs (qCTB-1-1, qCTB-4-1, qCTB-4-2) were detected in two or more trials. Our study sets a foundation for cloning cold-tolerance genes and provides opportunities to understand the mechanism of cold tolerance at the booting stage.
Ya-Feng Song,Xiong-Xiong Kong,Wei-Bin Tang,Zhong-Qiang Suo,Huan Zhang,Chen-Yang Li,Qian Jia,Cai-Xia Xue,Yan-Wu Lu,Chao-Pu Yang 한국물리학회 2019 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.74 No.11
We investigate the polarization effect in intersubband transitions in polar and nonpolar GaN-based multiple-quantum well (MQW) structures for terahertz (THz) emissions by using systematic comparisons and design a nonpolar GaN/Al$_{0.2}$Ga$_{0.8}$N two-well-based MQW structure with an emitting photon of 7.27 THz (30.07 meV). Its lower energy separation (92.7 meV) matches the resonant phonon depopulation condition for better population inversion. It shows a lower threshold current density $J\rm_{th}$ at all temperatures (1.548 kA/cm$^2$ at 90 K) and a higher output power of up to 86.1 mW at 5.8 K and 33.6 mW at 100 K. Our results for the polar GaN MQW are very close to the experimental data in the literature. We find that the $J\rm_{th}$ of the nonpolar GaN MQW increases more slowly than that of the polar GaN MQW as temperature increases, indicating the nonpolar GaN MQW may be a worth-trying direction for improving the operation temperature. These results can provide meaningful references for the design and fabrication of nonpolar GaN-based THz MQW or quantum cascade structures.