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Ga doped ZnO 박막의 질소분위기 열처리에 따른 특성 변화
허성보 ( Sung Bo Heo ),이영진 ( Young Jin Lee ),이학민 ( Hak Min Lee ),김선광 ( Sung Kwang Kim ),김유성 ( Yu Sung Kim ),공영민 ( Young Min Kong ),김대일 ( Dae Il Kim ) 한국열처리공학회 2011 熱處理工學會誌 Vol.24 No.6
Ga doped ZnO (GZO) thin films were deposited with RF magnetron sputtering on glass substrate and then the effect of post deposition annealing at nitrogen atmosphere on the structural, optical and electrical properties of the films was investigated. The post deposition annealing process was conducted for 30 minutes at different temperature of 150, 300 and 450℃, respectively. As increase annealing temperature, GZO films show the increment of the prefer orientation of ZnO (002) diffraction peak in the XRD pattern and the optical transmittance in a visible wave region was also increased, while the electrical sheet resistance was decreased. The figure of merit obtained in this study means that GZO films which vacuum annealed at 450℃ have the highest optoelectrical performance in this study. (Received October 12, 2011; Revised November 4, 2011; Accepted November 16, 2011)
전자빔 조사 에너지에 따른 In2O3 박막의 특성 변화
허성보 ( Sung Bo Heo ),천주용 ( Joo Yong Chun ),이영진 ( Young Jin Lee ),이학민 ( Hak Min Lee ),김대일 ( Dae Il Kim ) 한국열처리공학회 2012 熱處理工學會誌 Vol.25 No.3
We have considered the effect of electron irradiation energy of 300, 600 and 900 eV on structural, electrical and optical properties of In2O3 films prepared with RF magnetron sputtering. In this study, the thin film crystallization, optical transmittance and sheet resistance are dependent on the electron`s irradiation energy. The electron irradiated In2O3 films at 900 eV are grown as a hexagonal wurtzite phase. The sheet resistance decreases with a increase in electron irradiation energy and In2O3 film irradiated at 900 eV shows the lowest sheet resistance of 110Ω/□. The optical transmittance of In2O3 films in a visible wave length region also depends on the electron irradiation energy. The film that at 900 eV shows the higher figure of merit than another films prepared in this study.
PC 기판위에 증착된 SiO₂/GZO박막의 전자빔 조사에너지에 따른 특성 변화
허성보(Sung-bo Heo),박민재(Min-jae Park),정우창(Uoo-chang Jung),김대일(Dae-il Kim),차병철(Byung-chul Cha) 한국표면공학회 2014 한국표면공학회지 Vol.47 No.6
Ga-doped ZnO (GZO) single layer and SiO₂/GZO bi-layered films were deposited on Polycarbonate(PC) substrate by radio frequency magnetron sputtering. Influence of the structural, electrical, and optical properties of the films was considered. We have considered the influence of electron irradiation energy of 450 and 900 eV on the stuctural, electrical and optical properties of SiO₂/GZO thin films. The optical transmittance in a visible wave length region increased with the electron irradiation energy. The electrical resistivity of the films were dependent on the electron’s irradiation energy. The SiO₂/GZO films irradiated at 900 eV were showen the lowest resistivity of 7.8 × 10?3 Ωcm. The film which was irradiated by electron at 900 eV shows 84.3% optical transmittance and also shows lower than contact angle of 58o in this study.
허성보 ( Sung Bo Heo ),김소영 ( So Young Kim ),김승홍 ( Seung Hong Kim ),김선경 ( Sun Kyung Kim ),김유섬 ( Yu Sung Kim ),김대일 ( Dae Ii Kim ) 한국열처리공학회 2013 熱處理工學會誌 Vol.26 No.2
Abstrart ITO thin films deposited on glass substrate with RF magnetron sputtenng were vacuum annealed at 100, 200 and 300°C for 30 minutes and then effect of annealing temperature on the structural, electrical and optical properties of ITO films were investigated. The structural properties are strongly related to annealing temperature. The annealed films above 100°C are grown as a hexagonal wurtzite phase and the largest grain size is observed in the films annealed at 300°C. The electrical resistivity also decreases as low as 4.65 x I 0 0cm with a increase in annealing temperature and ITO film annealed at 300°C shows the lowest sheet resistance of 43.6 01 fl. The optical transmittance in a visible wavelength region also depends on the annealing temperature. The films annealed at 300°C show higher transmittance of 80.6% than those of the films prepared in this study.
초고경도 Ti–Al–Si–N 나노복합체 코팅막의 미세구조 및 트라이볼로지 거동에 관한 연구
허성보(Sung-Bo Heo),김왕렬(Wang Ryeol Kim) 한국표면공학회 2021 한국표면공학회지 Vol.54 No.5
In this study, the influence of silicon contents on the microstructure, mechanical and tribological properties of Ti–Al–Si–N coatings were systematically investigated for application of cutting tools. The composition of the Ti–Al–Si–N coatings were controlled by different combinations of TiAl₂ and Ti₄Si composite target powers using an arc ion plating technique in a reactive gas mixture of high purity Ar and N₂ during depositions. Ti–Al–Si–N films were nanocomposite consisting of nanosized (Ti,Al,Si)N crystallites embedded in an amorphous Si₃N₄/SiO₂ matrix. The instrumental analyses revealed that the synthesized Ti–Al–Si–N film with Si content of 5.63 at.% was a nanocomposites consisting of nano-sized crystallites (5–7 nm in dia.) and a three dimensional thin layer of amorphous Si₃N₄ phase. The hardness of the Ti–Al–Si–N coatings also exhibited the maximum hardness value of about 47 GPa at a silicon content of ~5.63 at.% due to the microstructural change to a nanocomposite as well as the solid-solution hardening. The coating has a low friction coefficient of 0.55 at room temperature against an Inconel alloy ball. These excellent mechanical and tribological properties of the Ti–Al–Si–N coatings could help to improve the performance of machining and cutting tool applications.
RF 스퍼터와 전자빔 조사를 이용한 ITO/Au/ITO 가스센서 제조 및 특성 평가
허성보 ( Sung Bo Heo ),이학민 ( Hak Min Lee ),( Young Jin Lee ),김유성 ( Yu Sung Kim ),채주현 ( Ju Hyun Chae ),유용주 ( Yong Zoo You ),김대일 ( Dae Il Kim ) 한국열처리공학회 2011 熱處理工學會誌 Vol.24 No.2
Single layer Sn doped In2O3(ITO) films and ITO 50 nm/Au 10 nm/ITO 40 nm (IAI) multilayer films were prepared with electron beam assisted magnetron sputtering on glass substrates. The effects of the Au interlayer, post-deposition atmosphere annealing and intense electron irradiation on the methanol gas sensitivity were investigated at room temperature. As deposited ITO films did not show any diffraction peaks in the XRD pattern, while the IAI films showed the diffraction peak for In2O3 (400). In this study, the gas sensitivity of ITO and IAI films increased proportionally with the methanol vapor concentration and an intense electron beam irradiated IAI film shows the higher sensitivity than the others film. From the XRD pattern, it is supposed that increased crystallization promotes the gas sensitivity. This approach is promising in gaining improvement in the performance of IAI gas sensors used for the detection of methanol vapor at room temperature.
RF 마그네트론 스퍼터로 증착된 In<sub>2</sub>O<sub>3</sub> 박막의 질소분위기 열처리에 따른 특성변화
공영민,이영진,허성보,이학민,서민수,김유성,김대일,Kong, Young-Min,Lee, Young-Jin,Heo, Sung-Bo,Lee, Hak-Min,Seo, Min-Su,Kim, Yu-Sung,Kim, Dae-Il 한국재료학회 2012 한국재료학회지 Vol.22 No.1
$In_2O_3$ films were deposited by RF magnetron sputtering on a glass substrate and then the effect of post deposition annealing in nitrogen atmosphere on the structural, optical and electrical properties of the films was investigated. After deposition, the annealing process was conducted for 30 minutes at 200 and $400^{\circ}C$. XRD pattern analysis showed that the as deposited films were amorphous. When the annealing temperature reached 200-$400^{\circ}C$, the intensities of the $In_2O_3$ (222) major peak increased and the full width at half maximum (FWHM) of the $In_2O_3$ (222) peak decreased due to the crystallization. The films annealed at $400^{\circ}C$ showed a grain size of 28 nm, which was larger than that of the as deposited amorphous films. The optical transmittance in the visible wavelength region also increased, while the electrical sheet resistance decreased. In this study, the films annealed at $400^{\circ}C$ showed the highest optical transmittance of 76% and also showed the lowest sheet resistance of $89{\Omega}/\Box$. The figure of merit reached a maximum of $7.2{\times}10^{-4}{\Omega}^{-1}$ for the films annealed at $400^{\circ}C$. The effect of the annealing on the work-function of $In_2O_3$ films was considered. The work-function obtained from annealed films at $400^{\circ}C$ was 7.0eV. Thus, the annealed $In_2O_3$ films are an alternative to ITO films for use as transparent anodes in OLEDs.
RF 마그네트론 스퍼터링에 의해 증착된 ITO/TiO2 적층 박막의 어닐링 효과
이영진 ( Young Jin Lee ),허성보 ( Sung Bo Heo ),이학민 ( Hak Min Lee ),김유성 ( Yu Sung Kim ),김대일 ( Dae Il Kim ) 한국열처리공학회 2012 熱處理工學會誌 Vol.25 No.5
ITO/TiO2 films were deposited by RF magnetron sputtering on glass substrates and then the effect of vacuum annealing on the structural, optical and electrical properties of the films was investigated. The structural, optical and electrical properties are strongly related to annealing temperature. The films annealed at 300℃ showed a grain size of 40.9 nm, which was larger than as-deposited amorphous films. The optical transmittance in the visible wavelength region also increased, while the electrical resistivity decreased. The ITO/TiO2 films annealed at 300℃ showed the highest optical transmittance of 81% and also showed the lowest electrical resistivity of 3.05×10-4 Ω㎝ in this study.
Titanium Aluminium Nitride 후막의 전자-빔 조사 효과
최수현(Su-Hyeon Choe),허성보(Sung-Bo Heo),공영민(Young-Min Kong),김대일(Daeil Kim) 한국표면공학회 2020 한국표면공학회지 Vol.53 No.6
Electron beam irradiation is widely used as a type of surface modification technology to advance surface properties. In this study, the effect of electron beam irradiation on properties, such as surface hardness, wear resistance, roughness, and critical load of Titanium Aluminium nitride (TiAlN) films was investigated. TiAlN films were deposited on the SKD-61 substrate by using cathode arc ion plating. After deposition, the films were bombarded with intense electron beam for 10 minutes. The surface hardness was increased up to 4520 HV at electron irradiation energy of 1500 eV. In addition, surface root mean square (RMS) roughness of the films irradiated at 1500 eV shows the lowest roughness of 484 nm in this study.