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정석훈,서헌덕,박범영,박재홍,박성민,정문기,정해도,김형재,Jeong, Sukhoon,Seo, Heondeok,Park, Boumyoung,Park, Jaehong,Park, Seungmin,Jeong, Moonki,Jeong, Haedo,Kim, Hyoungjae 한국전기전자재료학회 2005 전기전자재료학회논문지 Vol.18 No.9
This study introduces Electro-chemical Mechanical Deposition(ECMD) lot making Cu interconnect. ECMD is a novel technique that has ability to deposit planar conductive films on non-planar substrate surfaces. Technique involves electrochemical deposition(ECD) and mechanical sweeping of the substrate surface Preferential deposition into the cavities on the substrate surface nay be achieved through two difference mechanisms. The first mechanism is more chemical and essential. It involves enhancing deposition into the cavities where mechanical sweeping does not reach. The second mechanism involves reducing deposition onto surface that is swept. In this study, we demonstrate ECMD process and characteristic. We proceeded this experiment by changing of distribution of current density on divided water area zones and use different pad types.
화학 기계적 연마에 의한 리튬 니오베이트의 광학 특성에 관한 연구
정석훈(Sukhoon Jeong),김영진(Youngjin Kim),이현섭(hyunseop Lee),정해도(Haedo Jeong) 대한기계학회 2008 대한기계학회 춘추학술대회 Vol.2008 No.5
Lithium niobate (LN:LiNbO₃) is a compound of niobium, lithium and oxygen. The characteristics of LN are piezoelectricity, ferroelectricity and photoelectricity, and which is widely used in widely surface acoustic wave (SAW). To manufacture LN device, the LN surface should be a smooth surface and defect-free because of optical property, but the LN material is processed difficult by traditional processes such as grinding and mechanical polishing (MP) because of its brittleness. To decrease defects, chemical mechanical polishing (CMP) was applied to the LN wafer. In this study, the suitable parameters such as down force and relative velocity, were investigated for the LN CMP process. To improve roughness, the LN CMP was performed using the parameters that were the highest removal rate among process parameters. And, evaluation of optical property was performed by the optical reflectance and non-linear characteristic.
리튬 니오베이트(LiNbO₃) 웨이퍼의 CMP에 관한 연구
조한철(Hanchul Cho),정석훈(Sukhoon Jeong),이호준(Hojun Lee),박재홍(Jaehong Park),김형재(Hyoungjae Kim),정해도(Haedo Jeong) 한국기계가공학회 2007 한국기계가공학회 춘추계학술대회 논문집 Vol.2007 No.-
Lithium niobate (LiNbO₃) crystal is a kind of brittle and high hardness material. Lithium niobate is ferroelectric that has piezoelectric and pyroelectric characteristic. Because of these characteristics, lithium niobate is used in many electron components and parts. However, it is easily damaged during machining, and difficult to obtain high quality surface. In oder to obtain high MRR (material removal rate) and high quality surface roughness, lithium niobate polishing process applied to CMP (chemical mechanical polishing) process which is consisted of chemical and mechanical effects. In these experiments, two type pads closed-cell type pad (IC 1400 K-groove pad) and opened-cell type pad (Suba 800 M2 pad) and slurry of fumed silica type (ILD 1300 slurry) were used in same velocity and pressure conditions. Nano-view was used to measure surface roughness of the wafer.
마이크로 구조를 가진 패드를 이용한 MEMS CMP 적용에 관한 연구
박성민(Sungmin Park),정석훈(Sukhoon Jeong),정문기(Moon ki Jeong),박범영(Boumyoung Park),정해도(Heado Jeong) 한국정밀공학회 2006 한국정밀공학회 학술발표대회 논문집 Vol.2006 No.5월
Chemical-mechanical polishing, the dominant technology for LSI planarization, is trending to play an important function in micro-electro mechanical systems (MEMS). However, MEMS CMP process has a couple of different characteristics in comparison to LSI device CMP since the feature size of MEMS is bigger than that of LSI devices. Preliminary CMP tests are performed to understand material removal rate (MRR) with blanket wafer under a couple of polishing pressure and velocity. Based on the blanket CMP data, this paper focuses on the consumable approach to enhance MEMS CMP by the adjustment of slurry and pad. As a mechanical tool, newly developed microstructured (MS) pad is applied to compare with conventional pad (IC1400-k, Nitta-Haas), which is fabricated by micro molding method of polyurethane. To understand the CMP characteristics in real time, in-situ friction force monitoring system was used. Finally, the topography change of poly-si MEMS structures is compared according to the pattern density, size and shape as polishing time goes on.
CMP시 SiO<sub>2</sub> 슬러리의 마찰 특성과 연마결과에 관한 연구
이현섭,박범영,서헌덕,정재우,정석훈,정해도,Lee Hyunseop,Park Boumyoung,Seo Heondeok,Jung Jaewoo,Jeong Sukhoon,Jeong Haedo 대한기계학회 2005 大韓機械學會論文集A Vol.29 No.7
The effects of mechanical parameters on the characteristics of chemical mechanical polishing(CMP) can be directly evaluated by friction force. The piezoelectric quartz sensor for friction force measurement was installed, and friction force could be detected during CMP process. Furthermore, friction energy can be calculated by multiplying relative velocity by integration of the friction force throughout the polishing time. $SiO_2$ slurry for interlayer dielectric(ILD) CMP was used in this experiment to consider the relation of frictional characteristics and polishing results. From this experiment, it is proven that the friction energy is an essential factor of removal rate. Also, the friction force is related to removal amount per unit length(dH/ds) and friction energy has corelation to the removal rate(dH/dt) and process temporature. Moreover, within wafer non-unifornity(WIWNU) is related to coefficient of friction because of the mechanical moment equilibrium. Therefore, the prediction of polishing result would be possible by measuring friction force.
박범영,이현섭,박기현,정석훈,서헌덕,정해도,김호윤,김형재,Park, Boumyoung,Lee, Hyunseop,Park, Kiyhun,Jeong, Sukhoon,Seo, Heondeok,Jeong, Haedo,Kim, Hoyoun,Kim, Hyoungjae 한국전기전자재료학회 2005 전기전자재료학회논문지 Vol.18 No.9
Chemical mechanical polishing(CMP) has become the process of choice for modem semiconductor devices to achieve both local and global planarization. CMP is a complex process which depends on numerous variables such as macro, micro and nano-geometry of pad, relative velocity between pad and wafer stiffness and dampening characteristics of pad, slurry, pH, chemical components of slurry, abrasive concentration, abrasive size, abrasive shape, etc. Especially, an oxidizer of chemical components is very important remove a target material in metal CMP process. This paper introduces the effect of oxidizer such as $H_2O_2,\;Fe(NO_3)_3\;and\;KIO_3$ in slurry for tungsten which is used in via or/and plug. Finally the duplex reacting mechanism of $oxidizer(H_2O_2)$ through adding the $catalyst(Fe(NO_3)_3)$ could acquire the sufficient removal rate in tungsten CMP.