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고이동도 산화물 반도체 박막 트랜지스터 구현을 위한 구동전류 향상
장경수,김태용,강승민,이소진,이윤정,이준신,Jang, Kyungsoo,Raja, Jayapal,Kim, Taeyong,Kang, Seungmin,Lee, Sojin,Nguyen, Thi Cam Phu,Than, Thuy Trinh,Lee, Youn-Jung,Yi, Junsin 한국전기전자재료학회 2015 전기전자재료학회논문지 Vol.28 No.6
Next-generation displays should be transparent and flexible as well as having high resolution and frame number. The main factor for active matrix organic light emitting diode and next-generation displays is the development of TFTs (thin-film transistors) with high mobility and large area uniformity. The TFTs used for transparent displays are mainly oxide TFT that has oxide semiconductor as channel layer. Zinc-oxide based substances such as indium-gallium-zinc-oxide has attracted attention in the display industry. In this paper, the mobility improvement of low cost oxide TFT is studied for fast operating next-generation displays by overcoming disadvantages of amorphous silicon TFT that has low mobility and poly silicon TFT that requires expensive equipment for complex process and doping process.
장경수(Jang, Kyungsoo) 한국신재생에너지학회 2011 한국신재생에너지학회 학술대회논문집 Vol.2011 No.11
바다를 가로막는 방벽이나 방조제의 배수갑문 또는 조력발전소의 수문과 같이 인공 해양구조물을 통하여 흐르는 고속 해류를 이용하여 발전하는 해류발전 방식에 있어서, 고속 해류에 적합한 수차터빈과 발전기의 특성을 알아보았다. 조석간만의 차가 큰 지역에 설치되는 인공 해양구조물을 지나는 해류는 인공 해양구조물 전후에 발생하는 해수의 위치에너지 차이가 운동에너지로 바뀌면서 조석간만의 자연현상에 의해 발생되는 조류의 속도보다 훨씬 더 빠르게 흐른다. 이론적으로 우리나라의 서해안의 조석간만의 범위 3~8m로부터 7.5~12m/s 정도의 고속 해류가 가능하다. 이러한 경우에 적합한 해류발전기는 수차터빈 날개지름의 크기가 5m에서부터 12m 이하이면서, 증속기어박스와 발전기, 유압시스템 및 냉각시스템 그리고 전력변환장치를 포함하는 발전시설들을 해수면 위에 설치하는 것이 바람직하다.
Ocean Current Power Parks using Garyuk Draining Sluices of Saemankeum
장경수(Jang, Kyungsoo),이정은(Lee, Jungeun) 한국신재생에너지학회 2010 한국신재생에너지학회 학술대회논문집 Vol.2010 No.06
Two ocean current power parks are suggested in the front and back of the Garyuk draining sluices of Saemankeum in Korea. They are characterized by installing a plurality of ocean current turbine generators which are arranged in five rows respectively in the land-side ocean current power park behind the Garyuk draining sluices and in the sea-side ocean current power park before the Garyuk draining sluices, generating electricity using the ocean current flowing through the Garyuk draining sluices in the ebbs and tides of Yellow sea. The potential energy of tidal difference of 2.611m at neap in Saemankeum can be converted into the kinetic energy of high speed ocean current via the Garyuk draining sluices which makes it possible to run the ocean current power parks on a large scale. The total facility capacity of two ocean current power parks that consist of 240 ocean current turbine generators with 4m diameter of turbine blades is about 134MW, and the expected total annual power output is about 586GWh.
신해양발전플랜트 : 조력발전과 해류발전을 겸하는 통합발전시스템
장경수(KyungSoo Jang) 대한토목학회 2011 대한토목학회지 Vol.59 No.5
해양에너지를 얻는 방법 중에서 조력발전은 방조제 건설로 인한 공사비가 많이 들고, 환경 및 생태계에 미치는 부정적인 영향이 있는 것으로 알려져 있다. 그래서 해양 선진국에서는 보다 친환경적인 조류발전의 개발 및 상용화에 박차를 가하고 있다. 지금까지 조력발전과 조류발전은 서로 다른 지역에서 적용하는 것으로 알려져 있지만 본 연구에서는 조력발전과 조류발전의 물리적 이론을 융합하는 해류발전의 개념을 정의하고 신해양발전플랜트 산업을 제시하고, 그 일례로써 조력발전과 해류발전을 겸하는 통합발전시스템의 가능성과 비전을 알아보았다.
오프 상태 스트레스에 의한 에이징된 P형 Poly-Si TFT에서의 GIDL 전류의 특성
신동기,장경수,박희준,김정수,박중현,이준신,Shin, Donggi,Jang, Kyungsoo,Phu, Nguyen Thi Cam,Park, Heejun,Kim, Jeongsoo,Park, Joonghyun,Yi, Junsin 한국전기전자재료학회 2018 전기전자재료학회논문지 Vol.31 No.6
The effects of off-state bias stress on the characteristics of p-type poly-Si TFT were investigated. To reduce the gate-induced drain leakage (GIDL) current, the off-state bias stress was changed by varying Vgs and Vds. After application of the off-state bias stress, the Vgs causing GIDL current was dramatically increased from 1 to 10 V, and thus, the Vgs margin to turn off the TFT was improved. The on-current and subthreshold swing in the aged TFT was maintained. We performed a technology computer-aided design (TCAD) simulation to describe the aged characteristics. The aged-transfer characteristics were well described by the local charge trapping. The activation energy of the GIDL current was measured for the pristine and aged characteristics. The reduced GIDL current was mainly a thermionic field-emission current.
CO<sub>2</sub>가스를 이용하여 증착된 터널층의 계면포획밀도의 감소와 이를 적용한 저전력비휘발성 메모리 특성
이소진,장경수,김태용,이준신,Lee, Sojin,Jang, Kyungsoo,Nguyen, Cam Phu Thi,Kim, Taeyong,Yi, Junsin 한국전기전자재료학회 2016 전기전자재료학회논문지 Vol.29 No.7
The silicon dioxide ($SiO_2$) was deposited using various gas as oxygen and nitrous oxide ($N_2O$) in nowadays. In order to improve electrical characteristics and the interface state density ($D_{it}$) in low temperature, It was deposited with carbon dioxide ($CO_2$) and silane ($SiH_4$) gas by inductively coupled plasma chemical vapor deposition (ICP-CVD). Each $D_{it}$ of $SiO_2$ using $CO_2$ and $N_2O$ gas was $1.30{\times}10^{10}cm^{-2}{\cdot}eV^{-1}$ and $3.31{\times}10^{10}cm^{-2}{\cdot}eV^{-1}$. It showed $SiO_2$ using $CO_2$ gas was about 2.55 times better than $N_2O$ gas. After 10 years when the thin film was applied to metal/insulator/semiconductor(MIS)-nonvolatile memory(NVM), MIS NVM using $SiO_2$($CO_2$) on tunneling layer had window memory of 2.16 V with 60% retention at bias voltage from +16 V to -19 V. However, MIS NVM applied $SiO_2$($N_2O$) to tunneling layer had 2.48 V with 61% retention at bias voltage from +20 V to -24 V. The results show $SiO_2$ using $CO_2$ decrease the $D_{it}$ and it improves the operating voltage.
산화물 반도체의 다양한 처리를 통한 박막트랜지스터의 전기적 특성 향상
김태용,장경수,이소진,강승민,이윤정,이준신,Kim, Taeyong,Jang, Kyungsoo,Raja, Jayapal,Phu, Nguyen Thi Cam,Lee, Sojin,Kang, Seungmin,Trinh, Than Thuy,Lee, Youn-Jung,Yi, Junsin 한국전기전자재료학회 2016 전기전자재료학회논문지 Vol.29 No.1
The ultimate aims of display market is transparent or flexible. Researches have been carried out for various applications. It has been possible to reduced the process steps and get good electrical properties for semiconductors with large optical bandgaps. Oxide semiconductors have been established as one of the leading and promising technology for next generation display panels. In this paper, alternative treatment processes have been tried for oxide semiconductors of thin film transistors to increase the electrical properties of the thin film transistors and to investigate the mechanisms. There exist a various oxide semiconductors. Here, we focused on InGaZnO, ZnO and InSnZnO which are commercialized or researched actively.