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테헤란로 고층사무소 건축의 저층부에서 나타나는 공공공간에 관한 연구
윤한섭 대한건축학회 2001 대한건축학회 학술발표대회 논문집 - 계획계/구조계 Vol.21 No.1
This study starts from the concerns of the public spaces of building's lower parts that could be regarded as pedestrian spaces. Recently the environment around this area has seen a large increase in construction of high-rise buildings stemming from the progress of architectural technology and the rise of the price of land. This thesis covers high-rise office buildings on Teheran between Sam-sung Subway Station and Kang-nam Subway Station. This area's roads show a form of lattice and the buildings were built during a relatively short time. After classifying buildings by the scale of site and the pattern how those buildings are connected to street, 9 buildings were finally to be analyzed. This study focused on the building's lower part which are opened to pedestrians to access easily and freely. Specially the relationship between the inner and outer public spaces of the building was mainly studied. The ratio of public space' area and the popularity program of lower parts were used as a supplementary analysis tool.
테헤란로 高層事務所 建物 저층부의 公共空間에 관한 연구
윤한섭,김성홍 대한건축학회 2003 대한건축학회논문집 Vol.19 No.3
This paper discusses the public space of the high-rise office buildings on Teheranno street. Since the 1980s, there has been a rapid growth in the construction of high-rise buildings due to the development of architectural technology and the increase of land price along this street. The ground level of high-rise office building is the buffer space between private and public realm and its roles in urban space becomes considerable. Nine buildings between Samsung and Kangnam subway station were chosen and classified according to their site areas and their relationships to the adjacent streets. Three aspects were primarily analyzed and interpreted. 1) the ratio of the public space and site area, 2) the programs of the ground level, 3) the spatial accessibility and permeability between buildings and streets. The paper reports that the buildings generally meet the legal requirements, yet their functions as public space were limited, and argues the importance of the linkage between urban and architectural design.
Catalytic decomposition of SiO2 by Fe and the effect of Cu on the behavior of released Si species
장동수,주미연,윤한섭,김진교 한국물리학회 2016 Current Applied Physics Vol.16 No.1
Si supply mechanism in the spontaneous formation of SiO2 pattern on a Cu foil, which was previously reported to enable the selective growth of graphene in no direct contact with organic materials, was investigated. Upon annealing at 1000 C and atmospheric pressure, SiO2 in the Fe-coated SiO2/Al2O3 template covered by a Cu foil was found to be severely decomposed by Fe droplets. No signature of reaction between SiO2 and Fe droplets suggested that Si species, which contributed to the spontaneous formation of SiO2 pattern on a Cu foil, originated from SiO2 catalytically decomposed by Fe droplets. In the absence of a Cu foil covering an Fe-coated SiO2/Al2O3 template, the catalytic activity of Fe droplets was significantly suppressed because of the encapsulation of Fe droplets by a 2-nm-thin-Fe3O4 layer. Furthermore, a part of the Fe film on SiO2/Al2O3 without a Cu foil turned into nanodroplets and assisted the formation of SiO2 nanowires. These results reveal that a Cu foil made an intriguing role in preventing Fe from being encapsulated by Fe3O4, so the catalytic role of Fe droplets was not terminated until SiO2 was fully decomposed. Our experimental results provided insights into better understanding of these intriguing behaviors of Fe and Cu on SiO2 at high temperature and at atmospheric pressure.
자기정렬 DMOS 트랜지스터의 채널 길이와 채널 Punchthrough에 관한 고찰
김종오,김진형,최종수,윤한섭,Kim, Jong-Oh,Kim, Jin-Hyoung,Choi, Jong-Su,Yoob, Han-Sub 대한전자공학회 1988 전자공학회논문지 Vol. No.
A general closed form expression for the channel length of the self-aligned double-diffused MOS transistor is obtained from the 2-dimensional Gaussian doping profile. The proposed model in this paper is composed of the doping concentration of the substrate, the final surface doping concentration and the vertical junction depth of the each double-diffused region. The calculated channel length is in good agreement with the experimental results. Also, the optimum channel structure for the prevention of the channel puncthrough is obtained by the averaged doping concentration in the channel region. A correspondence between the results of device simulation of channel punchthrough and the estimations of simplified model is confirmed. 자기정렬 DMOS 트랜지스터의 채널 길이에 관한 수식을 2차원적인 Caussian 농도분포식으로부터 유도하였다. 본 논문에서는 제시된 채널 길이에 관한 수식은 기판의 농도, 이중확산된 각 영역의 표면 농도와 수직 접합 깊이의 함수로 이루어져 있으며, 계산된 실험치와 잘 일치하고 있다. 또한 고전압용 DMOS 트랜지스터에서 채널 punchthrough를 억제할 수 있는 최소 채널 길이를 채널영역의 평균농도를 이용하여 계산하였으며 소자 simulation을 통하여 최적의 채널 조건(채널농도분포 및 채널 길이)를 예측할 수 있음을 확인하였다.