http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Nano-scale PMOSFET에서 Plasma Nitrided Oixde에 대한 소자 특성의 의존성
한인식,지희환,구태규,유욱상,최원호,박성형,이희승,강영석,김대병,이희덕,Han, In-Shik,Ji, Hee-Hwan,Goo, Tae-Gyu,You, Ook-Sang,Choi, Won-Ho,Park, Sung-Hyung,Lee, Heui-Seung,Kang, Young-Seok,Kim, Dae-Byung,Lee, Hi-Deok 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.7
In this paper, the reliability (NBTI degradation: ${\Delta}V_{th}$) and device characteristic of nano-scale PMOSFET with plasma nitrided oxide (PNO) is characterized in depth by comparing those with thermally nitrided oxide (TNO). PNO case shows the reduction of gate leakage current and interface state density compared to TNO with no change of the $I_{D.sat}\;vs.\;I_{OFF}$ characteristics. Gate oxide capacitance (Cox) of PNO is larger than TNO and it increases as the N concentration increases in PNO. PNO also shows the improvement of NBTI characteristics because the nitrogen peak layer is located near the $Poly/SiO_2$ interface. However, if the nitrogen concentration in PNO oxide increases, threshold voltage degradation $({\Delta}V_{th})$ becomes more degraded by NBT stress due to the enhanced generation of the fixed oxide charges.
Nano scale PMOSFET에서 Channel Stress에 의한 DC 특성 및 Channel Back Scattering의 변화 관찰
나민기(Min-Ki Na),한인식(In-Shik Han),최원호(Won-Ho Choi),유욱상(Ook-Sang You),권혁민(Hyuk-Min Kwon),박성수,지희환(Hee-Hwan Ji),박성형(Sung-Hyung Park),이가원(Ga-Won Lee),이희덕(Hi-Deok Lee) 대한전자공학회 2007 대한전자공학회 학술대회 Vol.2007 No.11
In this paper, both current and channel back scattering on under the channel stress were characterized in depth. The tensile and compressive stresses were applied to PMOSFET using with a nitride film used for the contact etch stop layer (CESL). The subthreshold slope of PMOSFET under compressive stress is smaller than that under the tensile stress, which exhibits the lower off current of compressive stress than tensile stress. Although back scattering ratio (rsat) of compressive stress was larger than tensile stress, thermal injection velocity (Vinj) of compressive stress was much larger than tensile case, which results in larger Idsat for compressive stress case. It was confirmed that the drain current of the device with an uniaxial stress has a strong dependency on the subthreshold slope and thermal injection velocity at the source side.