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n-CdS_0.46Se_0.54/p-Cu_2-xS_0.46Se_0.54 이종접합 태양전지의 제작과 그 특성에 관한 연구
유상하(Sang-Ha You),최승평(Seung-Pyung Choi),이상열(Sang-Youl Lee),홍광준(Kwang-Joon Hong),서상석(Sang-Suhg Suh),김혜숙(Hye-Suk Kim),전승룡(Seung-Yong Jeon),윤은희(Eun-Hee Yun),문종대(Jong-Dae Moon),신영진(Yeong-Jin Shin),정태수(Tae- 한국태양에너지학회 1993 한국태양에너지학회 논문집 Vol.13 No.1
승화방법에 의해 CdS_0.46Se_0.54 단결정을 성장하여 결정구조를 조사하고, Van der Pauw 방법으로 Hall effect를 측정하여 carrier density의 온도 의존성과 mobility의 온도 의존성을 조사하였다.<br/> 성장된 CdS_0.46Se_0.54 단결정을 치환반응 하여 n-CdS_0.46Se_0.54/p-Cu_2-xS_0.46Se_0.54 이종접합 태양전지를 제작하였다. Special response, 전류 - 전압특성 및 전력변환 효율을 조사하여 그 결과로부터 개방전압은 0.48V, 단락 전류 밀도는 21mA/㎠,fill factor와 전력변환효율은 각각 0.75와 9.5%를 얻었다. CdS_0.46Se_0.54 single crystal was grown by a sublimation method.<br/> The crystal structure and the temperature dependence of carrier density and mobility of CdS_0.46Se_0.54 single crystal were studied.<br/> Heterojunction solar cells of n-CdS_0.46Se_0.54/p-Cu_2-xS_0.46Se_0.54 were fabricated by the substitution reaction.<br/> The spectral response, the J - V characteristics and the conversion efficiency of the n-CdS_0.46Se_0.54/p-Cu_2-xS_0.46Se_0.54 heterojunction solar cells were studied.<br/> The open-circuit voltage, short-circuit density, fill factor and conversion efficiency of n-CdS_0.46Se_0.54/p-Cu_2-xS_0.46Se_0.54 heterojunction solar cells under 80mW/㎠ illumination were found to be 0.48V, 21mA/㎠, 0.75 and 9.5% respectively.
용액 성장법에 의한 CdS 다결정 박막 성장과 특성에 관한 연구
柳相河,李在連 조선대학교 동력자원연구소 1991 動力資源硏究所誌 Vol.13 No.1
Polycrystal films of CdS had been grown by chemical bath deposition. The lattice constants of the grown CdS polycrystal were measured to be a_0=4.1364 A and C_0=6.7129 A. The electron carrier concentration and hall mobility were measured by Van der Pauw method at room temperature and their values are 4.57×10^22m^-3 and 2.14×10^-4m²/V.S respectively. Photoluminescence spectrum produced green emission t 5140 A.
n-CdS/P-Si Heterojunction 태양전지 제작 및 전기적 특성에 관한 연구
柳相河,洪光俊 조선대학교 기초과학연구소 1985 自然科學硏究 Vol.8 No.1
CdS thin films were deposited by chemical bath deposition method. The CdS thin films have simple cubic structure with lattice constant 5.818 A and polycrystalline with orientation (111), (220) and (311). n-CdS/p-Si heterojunition solar cells are fabricated, depositing n-CdS thin films on p-Si substrates with orientation (422) by chemical bath depositing method. Under 80mW/㎠ condition the parameters for the typical cell were as followed; open circuit voltage V_oc=0.53V, short circuit current I_sc=11.3mA, fill factor FF=0.35 and conversion efficiency η=2.62%.
n-CdS_(0.46)Se_(0.54)/p-Cu_92-x)S_(0.46)Se_(0.54) 이종접합 태양전지의 제작과 그 특성에 관한 연구
유상하,최승평,이상열,홍광준,서상석,김혜숙,전승룡,윤은희,문종대,신영진,정태수,신현길,김택성,유기수 全北大學校 基礎科學硏究所 1994 基礎科學 Vol.16 No.-
승화방법에 의해 CdS_0.46Se_0.54 단결정을 성장하여 결정구조를 조사하고, Van der Pauw 방법으로 Hall effect를 측정하여 carrier density의 온도 의존성과 mobility의 온도 의존성을 조사하였다. 성장된 CdS_0.46Se_0.54 단결정을 치환반응하여 n-CdS_0.46Se_0.54/p-Cu_2-xS_0.46Se_0.54 이종접합 태양전지를 제작하였다. Spectral response, 전류-전압특성 및 전력변환 효율을 조사하여 그 결과로부터 개방전압은 0.48V, 단락 전류 밀도는 21mA/㎠, fill factor와 전력변환효율은 각각 0.75와 9.5%를 얻었다. CdS_0.46Se_0.54 single crystal was grown by a sublimation method. The crystal structure and the temperature dependence of carrier density and mobility of CdS_0.46Se_0.54 single crystal were studied. Heterojunction solar cells on n-CdS_0.46Se_0.54/p-Cu_2-xS_0.46Se_0.54 were fabricated by the substitution reaction. The spectral response, the J-U characteristics and the conversion efficiency of the n-CdS_0.46Se_0.54/p-Cu_2-xS_0.46Se_0.54 heterojunction solar cells were studied. The open-cricuit voltage, short-circuit density, fill factor and conversion efficiency of n-CdS_0.46Se_0.54/p-Cu_2-xS_0.46Se_0.54 heterojunction solar cells under 80mW/㎠ illumination were found to be 0.48V, 21mA/㎠, 0.75 and 9.5%, respectively.
C.V.D. 방법에 의한 Cd_0.78Zn_0.22 S박막 성장과 광전기적 특성연구
유상하,이상렬,홍광준,서상석,김혜숙,전승룡,윤은희,문종대 조선대학교 기초과학연구소 1993 自然科學硏究 Vol.16 No.1
We had grown Cd_0.78Zn_0.22S polycrystal thin films on slide substrate using chemical vapour deposition(CVD) method. We measured X-ray diffraction patterns in order to study Cd_0.78Zn_0.22S polycrystal structure. We studied its band gap using transmission curves and photocurrent and also analyzed photoluminescence using configurational coordinate model. We measured Hall effect·on this sample by Van der Pauw method and studied on carrier density and mobility depending on temperature.