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Surface Characterization and Morphology in Ar-Plasma-Treated Polypropylene Blend
원종일,최길영 한국고분자학회 2009 Macromolecular Research Vol.17 No.11
Surface modifications using a radio frequency Ar-plasma treatment were performed on a polypropylene (PP) blend used for automotive bumper fascia. The surface characterization and morphology were examined. With increasing aging time, there was an increase in wettability, oxygen containing polar functional groups (i.e., C-O, C=O and O-C=O) due to oxidation, the amount of talc, and bearing depth and roughness on the PP surface, while there was a decrease in the number of hydrocarbon groups (i.e., C-C and C-H). AFM indicated that the Ar-plasmatreatment on a PP blend surface transforms the wholly annular surface into a locally dimpled surface, leading to an improvement in wettability. SEM showed that the PP layer observed in the non-plasma-treated sample was removed after the Ar-plasma treatment and the rubber particles were exposed to the surface. The observed surface characterization and morphologies are responsible for the improved wettability and interfacial adhesion between the PP blend substrate and bumper coating layers.
역사이클하중이 원자력 배관재료의 파괴저항곡선에 미치는 영향
원종일,석창성,Weon, Jong-Il,Seok, Chang-Sung 대한기계학회 1999 大韓機械學會論文集A Vol.23 No.7
Fracture resistance(J-R) curves, which are used for the elastic-plastic fracture mechanics analyses, are known to be dependent on the cyclic loading history. The objective of this paper is to study the effect of reverse cyclic loading on J-R curves in CT specimens. The effect of two parameters was observed on the J-R curves during the reverse cyclic loading. One was the minimum-to-maximum load ratio(R) and the other was the incremental plastic displacement(${\delta}_{cycle}/{\delta}_i$), which is related to the amount of crack growth that occurs in a cycle. Fracture resistance test on CT specimens with varying load ratio and incremental plastic displacement were performed. For the SA 516 Gr. 70 steel, the results showed that the J-R curves were decreased with decreasing the load ratio and the incremental plastic displacement. When the load ratio was set to -1, the results of the J-R curves and the $J_i$ value were about $40{\sim}50$ percent of those for the monotonic loading condition. Also on condition that the incremental plastic displacement reached 1/40, the J-R curves and the $J_i$ value were about $50{\sim}60$ percent of those for the incremental plastic displacement of 1/10.
Reverse-Conducting IGBT Using MEMS Technology on the Wafer Back Side
원종일,고진근,이태복,오형승,이진호 한국전자통신연구원 2013 ETRI Journal Vol.35 No.4
In this paper, we present a 600-V reverse conducting insulated gate bipolar transistor (RC-IGBT) for soft and hard switching applications, such as general purpose inverters. The newly developed RC-IGBT uses the deep reactive-ion etching trench technology without the thin wafer process technology. Therefore, a freewheeling diode (FWD) is monolithically integrated in an IGBT chip. The proposed RC-IGBT operates as an IGBT in forward conducting mode and as an FWD in reverse conducting mode. Also, to avoid the destructive failure of the gate oxide under the surge current and abnormal conditions, a protective Zener diode is successfully integrated in the gate electrode without compromising the operation performance of the IGBT.