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Reverse-Conducting IGBT Using MEMS Technology on the Wafer Back Side
원종일,고진근,이태복,오형승,이진호 한국전자통신연구원 2013 ETRI Journal Vol.35 No.4
In this paper, we present a 600-V reverse conducting insulated gate bipolar transistor (RC-IGBT) for soft and hard switching applications, such as general purpose inverters. The newly developed RC-IGBT uses the deep reactive-ion etching trench technology without the thin wafer process technology. Therefore, a freewheeling diode (FWD) is monolithically integrated in an IGBT chip. The proposed RC-IGBT operates as an IGBT in forward conducting mode and as an FWD in reverse conducting mode. Also, to avoid the destructive failure of the gate oxide under the surge current and abnormal conditions, a protective Zener diode is successfully integrated in the gate electrode without compromising the operation performance of the IGBT.
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나경일,원종일,고진근,김상기,김종대,양일석,이진호 한국전자통신연구원 2013 ETRI Journal Vol.35 No.3
In this paper, we propose a triple-gate trench power MOSFET (TGRMOS) that is made through a modified RESURF stepped oxide (RSO) process, that is, the nitride_RSO process. The electrical characteristics of TGRMOSs, such as the blocking voltage (BVDS) and onstate current (ID,MAX), are strongly dependent on the gate configuration and its bias condition. In the nitride_RSO process, the thick single insulation layer (SiO2) of a conventional RSO power MOSFET is changed to a multilayered insulator (SiO2/SiNx/TEOS). The inserted SiNx layer can create the selective etching of the TEOS layer between the gate oxide and poly-Si layers. After additional oxidation and the poly-Si filling processes, the gates are automatically separated into three parts. Moreover, to confirm the variation in the electrical properties of TGRMOSs, such as BVDS and ID,MAX, simulation studies are performed on the function of the gate configurations and their bias conditions. BVDS and ID,MAX are controlled from 87 V to 152 V and from 0.14 mA to 0.24 mA at a 15-V gate voltage. This ID,MAX variation indicates the specific on-resistance modulation.
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