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ICP-CVD 방법에 의한 FAC 박막의 형성과 특성에 관한 연구
양창실,김두철,최치규 濟州大學校 基礎科學硏究所 2000 基礎科學硏究 Vol.13 No.1
In this experiments, we deposited FAC thin film by ICPCVD method. we exchanged CF₄gas flow rate at 20 from 35 sccm, and we fixed RF power and substrate temperature at 800 W and room temperature. After deposition, we have annealed at 300℃, 500℃. From FTIR, XPS analysis, we observed that FAC thin film had less-cross linked structure. The dielectric constant of the FAC thin film had 2.4, and after annealed FAC thin film was stable more than not annealed film in thermal stability.
HDPCVD 방법에 의해 증착된 a-C:F 박막의 구조분석
양창실,최치규,이광만 제주대학교 공과대학 첨단기술연구소 2001 尖端技術硏究所論文集 Vol.12 No.2
In this experiments, FAC(fluorinated amorphous carbon) thin films were deposited by ICPCVD(inductively coupled plasma chemical vapor deposition) method. CF_4 gas flow rate was changed from 20sccm to 75sccm under the fixed RF power and substrate temperature at 800W and room temperature, respectively. The samples were annealed at 300℃ and 500℃ after deposition. From FTIR and XPS analysis, we observed that a-C:F(FAC) thin film had less-cross linked structure. This a-C:F(FAC) thin film had 2.3 relative dielectric constant, and thermal stability of annealed a-C:F(FAC) thin film was better than as-deposited ones.
Yang, Chang Sil,Yu, Young-Hun,Lee, Kwang-Man,Lee, Heon-Ju,Choi, Chi Kyu 제주대학교 기초과학연구소 2002 基礎科學硏究 Vol.15 No.1
본 연구에서는 ICPCVD 방법으로 BTMSM과 산소 가스를 이용하여 차세대 반도체 소자에 적용가능한 저유전 박막인 SiOC 박막의 열처리 전후의 탄소 농도가 유전상수에 끼치는 영향에 관하여 연구하였다. 열처리 후에 산소의 농도가 다소 감소하며 탄소의 농도가 약간 증가함을 XPS와 FT-IR을 통하여 확인할수 있었으며 열처리 후의 SiOC 박막의 최저 유전 상수는 2.1이었다. Carbon doped silicon oxide (SiOC) films with low dielectric constant films were deposited on p-type Si(100) substrates using a mixture gases of the bistrimethylsilymethane(BTMSM) and oxygen gas by an inductively coupled plasma chemical vapor deposition. The Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy spectra were employed to investigate the porosity and the atomic concentration in the films. After annealing at 400℃ in vacuum, the carbon contents of the deposited film was increased, but the film density decreased. Therefore, the annealed SiOC composite films have the lowest relative dielectric constant ( k = 2.1).
총구리 배선 공정을 위한 저유전 물질 개발 동향과 특성
최치규,양창실 한국물리학회 2005 새물리 Vol.51 No.1
As on-chip device densities increase and active device dimensions are reduced, the signal delay and noise also increase due to capacitive coupling and crosstalk between the metal interconnections. Since the delay, noise and power consumption all depend critically on the dielectric constant (k) of the separating insulator, much attention has recently been focused on replacing the standard silicon dioxide with new inter-metal dielectric materials that have considerably lower dielectric constants than thermal silicon dioxide lms (k = 3.9 4.2). The fabricating technology of low-k materials for Cu/Low-k chips is essential to the next-generation Cu/Low-k device in which the low-k lms with nano-pore structure is used for the inter-layer or the inter-metal dielectrics(IMD). The technology includes the High Density Plasma CVD(HDPCVD) method of low-k lms, the HDPCVD method of a inter-metal barrier for integrating process, and various electrical and chemical, physical analysis methods for characterizing the fabricated dielectrics. Because low-k lms with nano-pore structure for a next-generation of DRAM memory device of about 0.1 m or less must be fabricated by a series HDPCVD technologies, the prime point of our research is to the realization of low-k materials and process approximating "r < 2.0 on the basis of now immature SiOC composite lm with nanopore structure for the low-k CVD technologies. The many new resulting materials needs to be classied in terms of their materials characteristics, evaluated in terms of their properties, and tested for process compatibility. In addition, it addresses some of the needs for improved metrology for determining pore size, size distributions, structure, and mechanical properties.
ICP-CVD 방법에 의한 TiN barrier metal 형성과 특성
이유성,양두훈,오대현,양창실,강민성,최치규,오경숙 濟州大學校 基礎科學硏究所 1999 基礎科學硏究 Vol.12 No.1
TiN films were prepared on Si(100) substrate by ICP-CVD(inductively coupled plasma chemical vapor deposition) using TEMAT(tetrakis ethymethamido titanium : Ti[N(CH₃)(C2₂H?]₄) precursor at various deposition conditions. Phase, microstructure, and the electrical properties of TiN films were characterized by x-ray diffraction (XRD), x-ray photoelectron spectroscopy(XPS). Polycrystalline TiN films B1 structure were grown at temperatures over 300℃. Perferentially oriented along TiN(200) films were obtained at temperatures over 400℃ with the folw rates of 5 and 100 sccm for N₂and Ar gas. The TiN/Si(100) interface was flat and no chemical reaction between TiN and SiO₂was found. The resistivity, carrier concentration and the carrier mobility for the TiN sample prepared at 500℃ are 2070 μ Ωcm, 6.06X10? cm?³and 10.5X10³㎠/V·sec, respectively.