특집 : 작은 통일, 남북 공유하천부터! ; 남북 공유하천 실태는? -북(北), 수력발전용 유역변경 남(南), 물 부족에 생태위협 직격탄

이광만 평화문제연구소 2014 통일한국 Vol.370 No.-

실리콘 미세가공 기술을 이용한 마이크로 진공 센서

이광만,고성택,김영민,고희선 濟州大學校 産業技術硏究所 1998 산업기술연구소논문집 Vol.9 No.1

A micro-vacuum sensor has been fabricated by using silicon micromachining techniques and platinum thin film. NON insulator was deposited by LPCVD and APCVD methods. The insulator diaphragm was fabricated by silicon anisotropic etching in TMAH solution. Thin film platinum heater and temperature detector were deposited by rf sputtering method and patterning was performed by means of lift-off method. Deposited platinum heater and temperature detector have been shown a linear I-V characteristics. TCR( temperature coefficient of resistance) of thin film platinum heater and temperature detector was about 0.0042/℃. Fabricated vacuum sensor was measured in the range of 1X 10^(-3) Torr to 1X10^(2) Torr. and shows a good linear operating characteristics in the range of 1x1^(-2) Torr에서 1X10^(0) Torr.

자동차 실내 환경제어용 센서시스템 개발

이광만,도양희 경북대학교 센서기술연구소 1997 연차보고서 Vol.1997 No.-

자동차 실내 환경제어용 센서시스템을 개발하기 위하여 마이크로 가스유량 센서와 습도센서를 설계하고 제조공정을 수행하였다. 1차년도의 연구결과를, 바탕으로 가스유량 센서의 경우, 히터와 반도체열전대를 NON 절연막 브리지에 형성한 구조를 하고있다. 습도센서의 경우, 단일 히터만이 NON 절연막 브리지 위에 형성된 간단한 구조를 하고 있다. 이들 마이크로 센서들을 CMOS공정과 실리콘 미세가공기술을 이용하여 제조하였다. 마이크로 센서시스템을 위한 기초연구로 가스유량센서와 습도센서를 동일 칩상에 조합하고 구동회로를 함께 집적한 스마트센서를 설계하였다. 설계된 구동회로와 마이크로 센서를 검증하였다. A micro gas-flow sensor and humidity sensor have been designed and fabricated for the development of the sensor system which can be applicable to the automotive interior environmental control. For the case of gas-flow sensor, a heater and semiconductor thermocouples were formed on the NON bridge based on the results of first research year's. For the case of humidity sensor, it have a simple structure compose of single heater formed on the NON bridge. These micro sensors were fabricated by CMOS process and silicon micromachining techniques. A smart sensor composed of gas-flow sensor, humidity sensor and driving circuits was designed for the basic research. The designed driving circuits and micro sensors were verified.

히터를 내장한 고온 산소센서의 개발

이광만,고성택 경북대학교 센서기술연구소 1993 연차보고서 Vol.1993 No.-

마이크로머시닝 기술과 반도체 공정기술을 활용하여 히터가 내장된 고온 산소센서를 개발하였다. 얇은 실리콘 다이아프램 위에 백금히터와 온도감지기를 내장시켜 작은 전력으로 구동되고 on-site 온도측정이 가능하였다. 약 2와트 부근의 전력에서 약 800℃의 온도를 얻었다. 고주파 반응성 스퍼터링법으로 형성된 이트리아가 약 8몰%가 함유된 지르코니아(YSZ)박막을 고체전해질로 사용하였다 제조된 산소센서는 산소함량이 0에서 18몰%의 범위 내에서 산소함량과 측정전류의 상관관계가 직선적인 응답 특성을 보였다. A high temperature oxygen sensor is developed using micromachining techniques and microelectronic fabrication technology. It is possible to have low power diriving and on-site temperature measurement due to the on-chip platinum heater and temperature detector on the thin silicon diaphragm. The sensor can be operated up to 800℃ and require about two watts power. The YSZ thin films as a solid electrolyte were deposited by reactive suputtering method with the target (8mol% of Y-2O_3 in the ZrO^2). The fabricated oxygen sensors have been shown a linear relationship between the oxygen content and the current from the measurement within 0 to 18 mol% of the oxygen contents.

CVD 다이아몬드 박막의 열전도 특성

이광만,고정대,최치규 제주대학교 산업기술연구소 2001 尖端技術硏究所論文集 Vol.12 No.1

Diamond has outstanding thermal properties that make it the material of choice for heat spreading applications in microelectronic devices. In order to asses thermal properties of diamond films grown by microwave plasma CVD method, we have applied an ac thermal conductivity measurement technique where films are thermally excited at frequency w while the thermal response is measured at the third harmonic via a lock-in amplifier. This method is insensitive to errors due thermal noise. Before the application to diamond, the measurement technique was tested on fused silica and sapphire. The results were in good agreement with published values. The thermal conductivity of CVD diamond films were measured to be around 3 W/cm·K.

마이크로파 플라즈마 화학기상증착법에 의한 HOD 박막 성장

이광만,최치규 한국반도체디스플레이기술학회 2004 반도체디스플레이기술학회지 Vol.3 No.3

Highly oriented diamond (HOD) films in polycrystalline can be grown on the (100) silicon substrate by microwave plasma CVD. Bias enhanced nucleation (BEN) method was adopted for highly oriented diamond deposition with high nucleation density and uniformity. The substrate was biased up to -250[Vdc] and bias time required for forming a diamond film was varied up to 25 minutes. Diamond was deposited by using $\textrm{CH}_4$/CO and $H_2$ mixture gases by microwave plasma CVD. Nucleation density and degree of orientation of the diamond films were studied by SEM. Thermal conductivity of the diamond films was ∼5.27[W/cm.K] measured by $3\omega$ method.

자동차용 센서응용을 위한 CMOS 열전대 공정 개발

이광만,박세광,도양회,Liu, C.C. 경북대학교 센서기술연구소 1996 연차보고서 Vol.1996 No.-

자동차용 센서응용을 위하여 CMOS공정을 이용한 마이크로 열센서의 기초 제조공정을 개발하고 CMOS공정과 호환성을 갖는 열센서의 마스크 설계와 공정 설계를 하였다. LPCVD법, APCVD법 및 실리콘 미세가공기술을 각각 활용하여 열전도율이 낮고 내부응력이 최소화된 NON절연막 다이아프램을 형성하였다. TMAH용액의 농도와 온도를 3∼25wt%와 80∼90℃ 범위내에서 각각 변화시키면서 실리콘의 식각특성을 조사하였다. 그리고 NON절연막의 기계적 및 열적응력을 NON 캔티레버와 빔의 조합으로 이루어진 시험패턴의 식각을 통하여 각각 조사하였다. 그리고 CMOS 구동회로를 내장한 마이크로 열센서의 기초연구를 하였다. A basic fabrication process of micro thermal sensor was developed and the related mask pattern and process were designed by standard CMOS process for the automotive sensor application. An NON dielectric diaphragm with low thermal conductivity and minimum internal stress was fabricated by LPCVD, APCVD methods and silicon micromachining techniques. Etching characteristics of silicon in the TMAH solution was studied with the TMAH concentration and temperature variation of 3∼25wt% and 80∼90℃, respectively. Mechanical and thermal stress of the NON layer were investigated by using a test pattern which composed of cantilever and beam. And a micro thermal sensor with on-chip CMOS driving circuits was studied.

ISFET 마이크로프로브를 利用한 血中 水素이온 濃度測定

李光萬 제주대학교 1987 논문집 Vol.25 No.-

종래의 이온選澤性電極(ISE)과 MISFET를 結合한 SIFET를 半導體集積回路工程技術을 이용하여 제조하고, 電氣化學的 毛細管基準電極을 考案하여 ISFET와 組合함으로써 ISFET마이크로프로브를 製作하고 그 動作特性을 調査하였다. 또 이 마이크로프로브를 이용하여 血中 pH測定을 試圖하고 이의 活用可能性을 보였다. 칩의 폭이 400μm(SL-ⅡS)및 800μm(SL-ⅡP)인 ISFET를 제조하였는데, 제조된 ISFET는 같은 집에 들어있는 MISFET의 特性調査에 의해서 그 FET性能이 優秀함을 확인할 수 있었다. 이 ISFET의 水素이온感知膜으로는 LPCVD法으로 실리콘酸化膜 위에 形成시킨 S??₃N₄膜이다. 安定度의 改善을 위해서 제조공정에서 특별히 게이트酸化膜形成時에 two-step TCE酸化法을 活用하였다. 眞空蒸着法을 이용하여 Ag/AgCl 薄膜細線을 얻고, 이를 10~20μm정도인 유리毛細管과 組合하여 毛細管 Ag/AgCl-sat. KCL 기준전극을 제작하였다. 제작된 ISFET마이크로프로브의 感度는 36~50mV/pH였고, 1초미만의 빠른 응답특성을 나타내었다. 이온千涉效果測定에서 千涉이온 K?? 및 Na?? 농도가 각각 0.01몰 및 0.1몰 이상이 되면서 부터는 이 마이크로프로브의 이온千涉特性이 타나나기 시작하였다. 이 ISFET마이크로프로브를 이용하여 人血中 pH를 生體外的으로 측정하고 Blood Gas Analysis의 결과와 대비한 결과 약 0.2pH 정도 차이가 있었다. 그 이유는 이온千涉效果 및 단백질에 의한 차폐효과라고 생각된다. ISFET and micro reference electrodes for the development of ion-sensing microprobes have been designed and fabricated, and their performance characteristics have been also examined. The ISFET microprobes are semiconductor devices having the ion sensitive and selective characteristics of ISE and various advantages of MISFET including the operational principle of the field effect and the well-developed IC fabrication techniques. Especially, this ISFET microprobe can be employed for monitoring continuously changing ion concentration in the local part of the living body. A micro ISFET SL-Ⅱ S chip (400x1400 ?? m²) has been designed and fabricated by using mainly the standard NMOS process techniques. A capillary Ag/AgCl reference electrode was made by combining of glass capillary(inner diameter: 10-20 ?? m) and Ag/AgCl thin film deposited by thermal evaporation. The measured sensitivities and response time of the ISFET microprobes are measured to be 36-50 mV/pH and less than one second, respectively. Ion intefering effect of the ISFET microprobe for the K and Na ions was investigated. When K and Na ion concentrations exceed 0.01 mole and 0.10 mole respectively, some significant interfering effects appear. The K ion interfering effect is larger than that of Na ion. A pH measurement of human blood with the microprobe was sucessfully performed, and the results were compared with the values of blood gas analysis.

CVD 다이아몬드 박막의 열전도 특성

이광만,고정대,최치규 濟州大學校 産業技術硏究所 2001 산업기술연구소논문집 Vol.12 No.1

Diamond has outstanding thermal properties that make it the material of choice for heat spreading applications in microelectronic devices. In order to asses thermal properties of diamond films grown by microwave plasma CVD method. we have applied an ac thermal conductivity measurement technique where films are thermally excited at frequency ω while the thermal response is measured at the third harmonic via a lock-in amplifier. This method is insensitive to errors due thermal noise. Before the application to diamond. the measurement technique was tested on fused silica and sapphire. The results were in good agreement with published values. The thermal conductivity of CVD diamond films were measured to be around 3 W/cm·K.

회원작품 - 포스코 역사관

이광만,오동희,Lee, Gwang-Man,O, Dong-Hui 대한건축사협회 2003 建築士 Vol.2003 No.7