http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
울진 소광리 소나무 나이테를 이용한 고사연도 및 원인 분석
신재수 ( Jae-soo Shin ),이요섭 ( Yo-sub Lee ),이주석 ( Ju-seok Lee ),김은숙 ( Eun-sook Kim ),서정욱 ( Jeong-wook Seo ) 한국목재공학회 2022 한국목재공학회 학술발표논문집 Vol.2022 No.1
지난 몇 년간 울진 소광리에서 지속적으로 발생하고 있는 소나무 고사현상에 대해 국내 연구에서는 잦은 이상기상 현상을 그 원인으로 지목하였다. 이러한 연관성을 구체적으로 제시하기 위해서는 소나무 생장과 기후와의 연관성 및 고사연도가 체계적으로 조사되어야 하지만, 관련된 연구는 부족한 실정이다. 본 연구는 소광리 중미골과 너남골 일원에서 군집형태로 발생한 소나무 고사 임분 3곳(중미골 2곳, 너남골 1곳)을 대상으로 소나무 생장과 기후와의 관계 및 고사연도를 분석하기 위해 수행되었다. 연구 목적을 달성하기 위해 생육목 24본과 고사목 27본이 선발되었다. 나이테는 생장추를 이용하여 채취하였으며, 생장편(increment core)을 이용하여 수목당 2개씩 채취하였다. 나이테폭연륜연대기 작성을 위해 생장편의 횡단면을 밸트사포로 연마한 후, 나이테 너비측정시스템을 이용하여 0.01mm 단위까지 측정하였다. 연구지역을 대표할 대표나이테폭연대기는 크로스데이팅(cross-dating)에 성공한 생육목을 이용하여 작성하였으며, 작성된 대표나이테폭연대의 길이는 189년(1832∼2021)이다. 고사연도 분석을 위해 작성된 대표나이테폭연대기와 고사목 나이테폭연대기 상호간 크로스데이팅을 실시한 결과, 중미골 A임분(해발 664m) 소나무 모두는 2020년에 고사하였으며, 중미골 B임분(795m)의 소나무는 2012∼2013년에 고사, 너남골(771m)의 소나무 모두는 2019년에 고사한 것으로 확인되었다. 각 임분의 소나무 생장과 기후와의 상관관계를 분석하기 위해 표준화된 지수나이테폭연대기(index chronology)를 작성하였다. 기후자료는 기상청 기후정보포털에서 제공하는 최근 20년(2000∼2019)의 1km 해상도 격자자료를 활용할 것이다. 연구지에 맞게 보정된 기후자료를 활용함으로써 보다 정확한 분석이 이뤄지도록 하였다. 본 연구를 통해 획득될 결과는 울진 소광리 소나무의 고사원인 및 기후영향을 밝히는데 크게 기여할 것이다.
전기문,신재수,임성규,박상현,강병구,윤진욱,윤주영,신용현,강상우,Jeon, Ki-Moon,Shin, Jae-Soo,Lim, Sung-Kyu,Park, Sang-Hyun,Kang, Byoung-Koo,Yune, Jin-Uk,Yun, Ju-Young,Shin, Yong-Hyeon,Kang, Sang-Woo 한국진공학회 2011 Applied Science and Convergence Technology Vol.20 No.2
본 연구에서는 새롭게 개발된 센서인 in-situ particle monitor (ISPM)와 기존센서의 기능을 업그레이드 한 센서인 self-plasma optical emission spectroscopy (SPOES)를 이용해 화학기상증착 진공공정을 진단하였다. 본 연구에서 사용된 증착공정 장비는 silane 가스를 이용한 silicon plasma enhanced chemical vapor deposition과 borophosphosilicate glass 증착장비이다. 두 장비의 증착 또는 클리닝 조건에서의 배출되는 오염입자와 배기가스를 개발된 센서를 이용해 공정상태를 실시간으로 진단하는 것과 개발된 센서의 센싱 능력을 검증하고자 하는 목적으로 연구가 진행되었다. 개발된 센서는 장비 배기구 설치되었으며, 공정압력, 유량, 플라즈마 파워 등의 공정변수 변화에 따른 오염입자 크기 및 분포와 배기 부산물의 변화를 측정하고, 측정 결과의 상호 연관성을 분석하였다. The diagnosis studies of the process of chemical vapor deposition were carried out by using in-situ particle monitor (ISPM) and self-plasma optical emission spectroscopy (SPOES). We used the two kinds of equipments such as the silicon plasma enhanced chemical vapor deposition system with silane gas and the borophosphosilicate glass depositon system for monitoring. Using two sensors, we tried to verify the diagnostic and in-situ sensing ability of by-product gases and contaminant particles at the deposition and cleaning steps. The processes were controlled as a function of precess temperature, operating pressure, plasma power, etc. and two sensors were installed at the exhaust line and contiguous with each other. the correlation of data (by-product species and particles) measured by sensors were also investigated.
HFCVD법에 의한 H<sub>2</sub> 다이아몬드 박막 제조에 수소가 미치는 영향
이권재,신재수,권기홍,이민수,고재귀,Lee Kwon-Jai,Shin Jae-Soo,Kwon Ki-Hong,Lee Min-Soo,Koh Jae-Gui 한국재료학회 2004 한국재료학회지 Vol.14 No.12
The diamond thin films was deposited on Si(100) substrate by Hot Filament Chemical Vapor Deposition (HFCVD) method using supplied the $CH_{3}OH/H_{2}O$ mixtured gas with excess H_{2} gas. The role of hydrogen ion as the growth mechanism of the diamond deposit was examined and compared the $CH_{3}OH/H_{2}O$ with the $CH_4/H_2$. Pressures in the range of $1.1\sim290{\times}10^2$ Pa were applied and using $3.4\sim4.4$ kw power. It was investigated by Scanning Electron Microscopy(SEM) and Raman spectroscopy The H ion was etching the graphite and restrained from $sp^3\;to\;sp^2$. But excess $H_2$ gas was not helped diamond deposit using $CH_{3}OH/H_{2}O$ mixtured gas. It was shown that the role of hydrogen ion of deposited diamond films using $CH_{3}OH/H_{2}O$ was different from $CH_4/H_2$.
세포독성 평가를 통한 γ-Fe<sub>2</sub>O<sub>3</sub> 나노입자의 생체안정성 및 약물전달효율
이권재,안정희,신재수,김동희,유화승,조종관,Lee, Kwon-Jai,An, Jeung-Hee,Shin, Jae-Soo,Kim, Dong-Hee,Yoo, Hwa-Seung,Cho, Chong-Kwan 한국재료학회 2010 한국재료학회지 Vol.20 No.3
This study examined the biostability and drug delivery efficiency of g-$Fe_2O_3$ magnetic nanoparticles (GMNs) by cytotoxicity tests using various tumor cell lines and normal cell lines. The GMNs, approximately 20 nm in diameter, were prepared using a chemical coprecipitation technique, and coated with two surfactants to obtain a water-based product. The particle size of the GMNs loaded on hangamdan drugs (HGMNs) measured 20-50 nm in diameter. The characteristics of the particles were examined by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-TEM) and Raman spectrometer. The Raman spectrum of the GMNs showed three broad bands at 274, 612 and $771\;cm^1$. A 3-(4, 5-dimethylthiazol-2-yl)-2, 5-diphenyltetrazolium bromide (MTT) assay showed that the GMNs were non-toxic against human brain cancer cells (SH-SY5Y, T98), human cervical cancer cells (Hela, Siha), human liver cancer cells (HepG2), breast cancer cells (MCF-7), colon cancer cells (CaCO2), human neural stem cells (F3), adult mencenchymal stem cells (B10), human kidney stem cells (HEK293 cell), human prostate cancer (Du 145, PC3) and normal human fibroblasts (HS 68) tested. However, HGMNs were cytotoxic at 69.99% against the DU145 prostate cancer cell, and at 34.37% in the Hela cell. These results indicate that the GMNs were biostable and the HGMNs served as effective drug delivery vehicles.
CH<sub>3</sub>OH/H<sub>2</sub>O 가스의 기상활성법을 이용한 다이아몬드 박막성장 과정에서의 OES분석
이권재,고재귀,신재수,Lee, Kwon-Jai,Koh, Jae-Gui,Shin, Jae-Soo 한국재료학회 2003 한국재료학회지 Vol.13 No.1
The intensity is measured as functions of both distance from filament to substrate and $CH_3$OH/($CH_3$OH+$H_2$O) ratio by OES(Optical Emission Spectroscopy) to investigate the effects of activation species such as $H_{\alpha}$, $H_{\beta}$, H$\Upsilon\;C_3$, CH on diamond film growth.$ H_{\alpha}$ increases as $CH_3$OH composition decreases, while CH increases as $CH_3$OH composition increases. The intensity of $H_{\alpha}$ decreases as the distance increases and that of CH increases as the distance increases. The intensities of other activation species of $H_{\beta}$, H$\Upsilon\;C_3$, do not vary as a function of measured position distance. It varies randomly. It means that various parameters for depositing diamond thin film can be explained by the intensity(density) change of activation species, as a function of the distance of the filament.
γ-Fe<sub>2</sub>O<sub>3</sub> nano 입자의 광학적 특성에 관한 연구
이권재,안정희,신재수,김창만,오자끼 하지메,고재귀,Lee, Kwon-Jai,An, Jeung-Hee,Shin, Jae-Soo,Kim, Chang-Man,Ozaki, Hajime,Koh, Jae-Gui 한국재료학회 2006 한국재료학회지 Vol.16 No.12
The ${\gamma}-Fe_2O_3$ nano particles in the size range of $5{\sim}30$ nm were prepared by a chemical coprecipitation method. The nano particles were coated with 2nd surfactants for obtaining the water-based. The size effect of ${\gamma}-Fe_2O_3$ nano particles for the ultraviolet protection was investigated. The variation of the UV-Vis transmittance spectra as a function of wavelength for a ${\gamma}-Fe_2O_3$ nano particles were showed red-shifted increase with the particle size. The protective effects of UVA onset at near 469, 494, 591 nm for a particle size of 8.7, 9.1 and 12 nm. It is shown that the ${\gamma}-Fe_2O_3$ nano particles was good materials for protect of UV.
Ce ion이 첨가된 황산 아노다이징의 온도 변화에 따른 내플라즈마 특성
소종호,윤주영,신재수,So, Jongho,Yun, Ju-Young,Shin, Jae-Soo 한국반도체디스플레이기술학회 2021 반도체디스플레이기술학회지 Vol.20 No.1
We report on the formation of anodic aluminum oxide (AAO) film using sulfuric acid containing cerium salt. When the temperature of the sulfuric acid containing cerium salt changes from 5 ℃ to 20 ℃, the current density and the thickness growth rate increase. The surface morphology of the AAO film change according to the temperature of the electrolytes. And that affected the breakdown voltage and the plasma etch rate. The breakdown voltage per unit thickness was the highest at 15 ℃, and the plasma etch rate was the lowest at 10 ℃ at 2.80 ㎛/h.
산불 발생 후 살아남은 소나무와 고사한 소나무의 폐색벽공 비율 비교
이요섭 ( Yo-seop Lee ),신재수 ( Jae-soo Shin ),서정욱 ( Jeong-wook Seo ) 한국목재공학회 2022 한국목재공학회 학술발표논문집 Vol.2022 No.2
산불 발생 후 소나무 고사가 유연벽공의 폐쇄와 연관성이 있는지 확인하기 위해 산불 피해목 중 고사한 소나무와 살아남은 소나무 흉고와 근원부에서 디스크를 채취하여 폐색벽공 비율의 차이를 조사하였다. 벽공이 폐쇄되면 수분이동이 불가능하여 수목생장에 스트레스를 유발하기 때문이다. 조사 결과, 모든 소나무에서 고사 유무 및 피해 높이와 상관없이 벽공이 폐쇄되었다. 따라서 산불피해로 인한 벽공 폐쇄율은 변화가 없는 것으로 확인되었으나, 조사 시료가 벌채 후 디스크 상태로 여러 주 동안 보관되어 있었기 때문에 폐색벽공이 건조에 의한 결과인지는 향후 연구로 밝혀야 할 것이다.
Atmospheric Plasma Spray코팅을 이용한 Yttrium계 소재의 내플라즈마성 및 세정 공정에 관한 연구
권혁성,김민중,소종호,신재수,정진욱,맹선정,윤주영,Kwon, Hyuksung,Kim, Minjoong,So, Jongho,Shin, Jae-Soo,Chung, Chin-Wook,Maeng, SeonJeong,Yun, Ju-Young 한국반도체디스플레이기술학회 2022 반도체디스플레이기술학회지 Vol.21 No.3
In this study, the plasma corrosion resistance and the change in the number of contamination particles generated using the plasma etching process and cleaning process of coating parts for semiconductor plasma etching equipment were investigated. As the coating method, atmospheric plasma spray (APS) was used, and the powder materials were Y<sub>2</sub>O<sub>3</sub> and Y<sub>3</sub>Al<sub>5</sub>O<sub>12</sub> (YAG). There was a clear difference in the densities of the coatings due to the difference in solubility due to the melting point of the powdered material. As a plasma environment, a mixed gas of CF<sub>4</sub>, O<sub>2</sub>, and Ar was used, and the etching process was performed at 200 W for 60 min. After the plasma etching process, a fluorinated film was formed on the surface, and it was confirmed that the plasma resistance was lowered and contaminant particles were generated. We performed a surface cleaning process using piranha solution(H<sub>2</sub>SO<sub>4</sub>(3):H<sub>2</sub>O<sub>2</sub>(1)) to remove the defect-causing surface fluorinated film. APS-Y<sub>2</sub>O<sub>3</sub> and APS-YAG coatings commonly increased the number of defects (pores, cracks) on the coating surface by plasma etching and cleaning processes. As a result, it was confirmed that the generation of contamination particles increased and the breakdown voltage decreased. In particular, in the case of APS-YAG under the same cleaning process conditions, some of the fluorinated film remained and surface defects increased, which accelerated the increase in the number of contamination particles after cleaning. These results suggest that contaminating particles and the breakdown voltage that causes defects in semiconductor devices can be controlled through the optimization of the APS coating process and cleaning process.