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무접합 비정질 InGaZnO 박막 트랜지스터의 게이트 산화층 항복 특성
장유진,서진형,박종태,Chang, Yoo Jin,Seo, Jin Hyung,Park, Jong Tae 한국정보통신학회 2018 한국정보통신학회논문지 Vol.22 No.1
박막 두께가 다른 무접합 비정질 InGaZnO 막막 트랜지스터를 제작하고 박막 두께, 동작 온도 및 빛의 세기에 따른 소자의 성능 변수를 추출하고 게이트 산화층 항복전압을 분석하였다. 박막의 두께가 클수록 소자의 성능이 우수하나 드레인 전류의 증가로 게이트 산화층 항복전압은 감소하였다. 고온에서도 소자의 성능은 개선되었으나 게이트 산화층 항복 전압은 감소하였다. 빛의 세기가 증가할수록 광자에 의해 생성된 전자로 드레인 전류는 증가 하였으나 역시 게이트 산화층 항복전압은 감소하였다. 박의 두께가 클수록, 고온일수록, 빛의 세기가 강할수록 채널의 전자수가 증가하여 산화층으로 많이 주입되었기 때문이다. 무접합 a-IGZO 트랜지스터를 BEOL 트랜지스터로 사용하기 위해서는 박막 두께 및 동작 온도를 고려해서 산화층 두께를 설정해야 됨을 알 수 있었다. Junctionless amorphous InGaZnO thin film transistors with different film thickness have been fabricated. Their device performance parameters were extracted and gate oxide breakdown voltages were analyzed with different film thickness. The device performances were enhanced with increase of film thickness but the gate oxide breakdown voltages were decreased. The device performances were enhanced with increase of temperatures but the gate oxide breakdown voltages were decreased due to the increased drain current. The drain current under illumination was increased due to photo-excited electron-hole pair generation but the gate oxide breakdown voltages were decreased. The reason for decreased breakdown voltage with increase of film thickness, operation temperature and light intensity was due to the increased number of channel electrons and more injection into the gate oxide layer. One should decide the gate oxide thickness with considering the film thickness and operating temperature when one decides to replace the junctionless amorphous InGaZnO thin film transistors as BEOL transistors.
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조현구(Jo, Hyun Gu),서진형(Seo, Jin Hyung) 한국부동산학회 2011 不動産學報 Vol.46 No.-
1. CONTENTS (1) RESEARCH OBJECTIVES This research intends to analyze the business index and the profitability (earnings rate) of one-room apartments, a dwelling property, for the purpose of proposing an objective and precise basis required in examining the validity of the one-room apartments in terms of profit, to the investors considering the one-room apartment as a means of investment. (2) RESEARCH METHOD The detailed and thorough purposes of this research is to scrutinize the profit structure of one-room apartments through the business index and profitability manifested in the one-room apartments, and to implement the approximation rule, the ratio analysis rule and the leverage analysis. (3) RESEARCH FINDINGS Summarizing the results of this research, first, the higher the proportion of operating expenses and the amount of debt services, the higher the rate of default on loans. This is because the debt services were not reflected in the repayment portion. In terms of the operating costs, the investment rate of one-room apartments was found to be comparatively lower than the investment rate in other properties, with respect to payment. Second, the leverage effect of the one-room apartment security deposit raises the capital of others (liabilities) to increase the earnings rate of equity capital. While the leverage raises the profitability of investments, it also increases risk. 2. RESULTS A research that takes into account the local characteristics of where the one-room apartment is located is necessary. This is because the local characteristics are likely to influence the operating income and the profitability. Since there is a difference between a research which includes data of tenants that influences the profit of one-room apartments and the one-room property business index and profitability depending on the distance and accessibility, a research that includes these primary factors is necessary.
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신규 합성 전구체를 이용한 원자층 증착법 기반 텅스텐 박막의 성장 메커니즘 및 박막 물성 비교 연구
이유진(Yujin Lee),서승기(Seunggi Seo),남태욱(Taewook Nam),이현호(Hyunho Lee),윤휘(Hwi Yoon),선상규(Sangkyu Sun),오일권(Il-Kwon Oh),이상훈(Sanghun Lee),서진형(Jin Hyung Seo),석장현(Jang Hyeon Seok),김형준(Hyungjun Kim) 대한전자공학회 2021 대한전자공학회 학술대회 Vol.2021 No.6
Tungsten (W) has a wide range of industrial applications since it has several advantages such as high conductivity, thermal stability, and electromigration durability. We report the properties of plasma-enhanced atomic-layer-deposited (ALD) tungsten (W) thin films. ALD is promising deposition method for obtaining thin films with good conformality, good uniformity, and low impurity contamination, as its growth mechanism is entirely based on self-limited surface reaction. Thus, the choice of an appropriate precursor for ALD is critical for obtaining high-quality films. We comparatively investigate the growth characteristics and film properties using two newly synthesized precursors, tungsten pentachloride (WCl5) and ethylcyclopentadienyltungsten(Ⅴ) tricarbonyl hydride (HEtCpW(CO)₃), and Ar/H₂ plasma as the reactant. Growth characteristics and film properties were significantly affected by ligands of precursors. These results provide fundamental and useful information, with respect to the selection of the suitable precursor, for practical implementation of device fabrication.
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