http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
배병중,박태준,양승한,이영문 한국공작기계학회 2000 한국공작기계학회 추계학술대회논문집 Vol.2000 No.-
The object of this paper is to evaluate the chip breakability using the experimental equation of surface roughness, which is developed in turning by an orthogonal array method. L_(9)(3⁴) orthogonal array method, one of fractional factorial design has been used to study effects of main cutting parameters such as cutting speed, feed rate and depth of cut, on the surface roughness. The evaluation of chip breakability is used the chip breaking index(C_(B)), non-dimensional parameter. And the analysis of variance (ANOVA)-test has been used to check the significance of cutting parameters. Using the result of ANOVA-test, the experimental equation of chip breakability, which consists of significant cutting parameters, has been developed. The coefficient of determination of this equation is 0.866.
양승한,이영문,배병중,Yang, Seung-Han,Lee, Young-Moon,Bae, Byong-Jung 한국기계가공학회 2002 한국기계가공학회지 Vol.1 No.1
The object of this paper is to predict the surface roughness using the experiment equation of surface roughness, which is developed with a full factorial design in turning. $3^3$ full factorial design has been used to study main and interaction effects of main cutting parameters such as cutting speed, feed rate, and depth of cut, on surface roughness. For prediction of surface roughness, the arithmetic average (Ra) is used, and stepwise regression has been used to check the significance of all effects of cutting parameters. Using the result of these, the experimental equation of surface roughness, which consists of significant effects of cutting parameters, has been developed. The coefficient of determination of this equation is 0.9908. And the prediction ability of this equation was verified by additional experiments. The result of that, the coefficient of determination is 0.9718.
탄화규소 단결정의 폴리타입 안정화를 위한 종자정 표면특성 연구
이상일,박미선,이도형,이희태,배병중,서원선,이원재,Lee, Sang-Il,Park, Mi-Seon,Lee, Doe-Hyung,Lee, Hee-Tae,Bae, Byung-Joong,Seo, Won-Seon,Lee, Won-Jae 한국전기전자재료학회 2013 전기전자재료학회논문지 Vol.26 No.12
SiC crystal ingots were grown on 6H-SiC dual-seed crystals with different surface roughness and different seed orientation by a PVT (Physical Vapor Transport) method. 4H and 15R-SiC were grown on seed crystal with high root-mean-square (rms) value. The polytype of grown crystal on the seed crystal with lower rms value was confirmed to be 6H-SiC. On the other hand, all SiC crystals grown on seed crystals with different seed orientation were proven to be 6H-SiC. The surface roughness of seed crystals had no effect on the crystal structure of the grown crystals. However, the crystal quality of 6H-SiC single crystals grown on the on-axis seed were revealed to be slightly better than that of 6H-SiC crystal grown on the off-axis seed.