http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
중요도 특징 지도 변화를 이용한 동영상 Visual Attention Model
노상수(Sang-Soo Noh),박상범(Sang-Beum Park),한영준(Young-Joon Han),한헌수(Hern-Soo Hahn) 대한전자공학회 2007 대한전자공학회 학술대회 Vol.2007 No.7
움직이는 물체를 포함하는 영상에서 물체 특징 변화의 흐름에 따라 인간은 선택적으로 주의 집중한다. 본 논문은 컴퓨터 비젼 시스템에서 동영상에 적합한 시각주의 모델(visual attention model)을 제안한다. 시각주의 모델의 중요도 지도(conspicuity map)의 변화량으로부터 물체 특징 변화를 고려했으며, 시각 주의 모델의 특징 지도(feature map)를 블록기반 처리하므로써 현저함 지도(saliency map)를 구성하는 시간을 크게 줄였다.
노상수 ( Sang Soo Noh ),서정환 ( Jeong Hwan Seo ),이응안 ( Eung Ahn Lee ),이선길 ( Seon Gil Lee ),박용준 ( Yong Joon Park ) 한국센서학회 2005 센서학회지 Vol.14 No.1
N/A Ni oxide thin films with thermal sensitivity superior to Pt and Ni thin films were formed through annealing treatment after Ni thin films were deposited by a r.f. magnetron sputtering method. Resistivity values of Ni oxide thin films were in the range of 10.5 μQcm to 2.84 x 10⁴ μi2cm according to the degree of Ni oxidation. Also temperature coefficient of resistance(TCR) values of Ni oxide thin films depended on the degree of Ni oxidation from 2,188 ppm/℃ to 5,630 ppm/℃ in the temperature range of 0~150℃. Because of the high linear TCR and resistivity characteristics, Ni oxide thin films exhibit much higher sensitivity to flow and temperature changes than pure Ni thin films and Pt thin films.
서정환,노상수,이응안,김광호,Seo, Jeong-Hwan,Noh, Sang-Soo,Lee, Eung-Ahn,Kim, Kwang-ho 한국전기전자재료학회 2005 전기전자재료학회논문지 Vol.18 No.3
This paper presents characteristics of CrOx thin-film, which were deposited on $Al_2$O$_3$ wafer by DC reactive magnetron sputtering in an argon-oxide atmosphere for high temperature applications. The present paper deals with a study of the technological characteristics of thin film resistors to provide a control in obtaining temperature coefficients of resistance of given value. The optimized condition of CrOx thin-film were thickness range of 2500 $\AA$ and annealing condition(350 $^{\circ}C$, 1 hr) in oxide partial pressure(3.5${\times}$10$^{-4}$ torr). Under optimum conditions, the CrOx thin-films is obtained a high resistivity, p=340 $\mu$Ωcm, a low temperature coefficient of resistance, TCR=-55 ppm/$^{\circ}C$. The CrOx thin films resistors which were fabricated in this paper had excellent characteristics as high precision resistors.
NH<sub>4</sub>OH용액이 반도체 소자용 구리 박막 표면에 미치는 영향
이연승,노상수,나사균,Lee, Youn-Seoung,Noh, Sang-Soo,Rha, Sa-Kyun 한국재료학회 2012 한국재료학회지 Vol.22 No.9
We investigated cleaning effects using $NH_4OH$ solution on the surface of Cu film. A 20 nm Cu film was deposited on Ti / p-Si (100) by sputter deposition and was exposed to air for growth of the native Cu oxide. In order to remove the Cu native oxide, an $NH_4OH$ cleaning process with and without TS-40A pre-treatment was carried out. After the $NH_4OH$ cleaning without TS-40A pretreatment, the sheet resistance Rs of the Cu film and the surface morphology changed slightly(${\Delta}Rs:{\sim}10m{\Omega}/sq.$). On the other hand, after $NH_4OH$ cleaning with TS-40A pretreatment, the Rs of the Cu film changed abruptly (${\Delta}Rs:till{\sim}700m{\Omega}/sq.$); in addition, cracks showed on the surface of the Cu film. According to XPS results, Si ingredient was detected on the surface of all Cu films pretreated with TS-40A. This Si ingredient(a kind of silicate) may result from the TS-40A solution, because sodium metasilicate is included in TS-40A as an alkaline degreasing agent. Finally, we found that the $NH_4OH$ cleaning process without pretreatment using an alkaline cleanser containing a silicate ingredient is more useful at removing Cu oxides on Cu film. In addition, we found that in the $NH_4OH$ cleaning process, an alkaline cleanser like Metex TS-40A, containing sodium metasilicate, can cause cracks on the surface of Cu film.