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이응안,서정환,노상수,Lee, Eung-Ahn,Seo, Jeong-Hwan,Noh, Sang-Soo 한국전기전자재료학회 2005 전기전자재료학회논문지 Vol.18 No.2
Ni oxide thin films were formed through annealing treatment in the atmosphere after Ni thin films deposited by a r.f. magnetron sputtering method and then electric and material properties were analyzed for application to thermal sensors. Resistivity of Ni thin films decreased after annealing treatment at 30$0^{\circ}C$ and 40$0^{\circ}C$ for five hours due to crystallization of Ni thin films but the value increased over 45$0^{\circ}C$ because of Ni thin film's oxidation. Resistivity values of Ni thin films were in the range of 10.5 $\mu$Ωcm/$^{\circ}C$ to 2.84${\times}$10$^4$$\mu$Ωcm/$^{\circ}C$ according to the degree of Ni oxidation. Also temperature coefficient of resistance(TCR) values of Ni oxide thin films depended on the degree of Ni oxidation such as 2,188 ppm/$^{\circ}C$ to 5,630 ppm/$^{\circ}C$ in the temperature range of 0 $^{\circ}C$∼150 $^{\circ}C$. The results demonstrate that Ni oxide thin films of annealing treatment at 40$0^{\circ}C$ for 5hours could be more advantageous than pure Ni thin films and Pt thin films from a point of output properties and TCR, applied to thermal sensors.
서정환,노상수,이응안,김광호,Seo, Jeong-Hwan,Noh, Sang-Soo,Lee, Eung-Ahn,Kim, Kwang-ho 한국전기전자재료학회 2005 전기전자재료학회논문지 Vol.18 No.3
This paper presents characteristics of CrOx thin-film, which were deposited on $Al_2$O$_3$ wafer by DC reactive magnetron sputtering in an argon-oxide atmosphere for high temperature applications. The present paper deals with a study of the technological characteristics of thin film resistors to provide a control in obtaining temperature coefficients of resistance of given value. The optimized condition of CrOx thin-film were thickness range of 2500 $\AA$ and annealing condition(350 $^{\circ}C$, 1 hr) in oxide partial pressure(3.5${\times}$10$^{-4}$ torr). Under optimum conditions, the CrOx thin-films is obtained a high resistivity, p=340 $\mu$Ωcm, a low temperature coefficient of resistance, TCR=-55 ppm/$^{\circ}C$. The CrOx thin films resistors which were fabricated in this paper had excellent characteristics as high precision resistors.
노상수 ( Sang Soo Noh ),서정환 ( Jeong Hwan Seo ),이응안 ( Eung Ahn Lee ),이선길 ( Seon Gil Lee ),박용준 ( Yong Joon Park ) 한국센서학회 2005 센서학회지 Vol.14 No.1
N/A Ni oxide thin films with thermal sensitivity superior to Pt and Ni thin films were formed through annealing treatment after Ni thin films were deposited by a r.f. magnetron sputtering method. Resistivity values of Ni oxide thin films were in the range of 10.5 μQcm to 2.84 x 10⁴ μi2cm according to the degree of Ni oxidation. Also temperature coefficient of resistance(TCR) values of Ni oxide thin films depended on the degree of Ni oxidation from 2,188 ppm/℃ to 5,630 ppm/℃ in the temperature range of 0~150℃. Because of the high linear TCR and resistivity characteristics, Ni oxide thin films exhibit much higher sensitivity to flow and temperature changes than pure Ni thin films and Pt thin films.
서정환 ( Jeong Hwan Seo ),노상수 ( Sang Soo Noh ),이응안 ( Eung Ahn Lee ),정귀상 ( Gwiy Sang Chung ),김광호 ( Kwang Ho Kim ) 한국센서학회 2005 센서학회지 Vol.14 No.1
N/A This paper present characteristics of chromium oxide thin-film as piezoresistive sensors, which were deposited on Si substrates by DC reactive magnetron sputtering in an argon-Oxide atmosphere for high temperature applications. The chemical composition, physical and electrical properties and thermal stability ranges of the CrO, sensing elements have studied. CrO_(x) thin films with a linear gauge factor(GF≒15), high electrical resistivity (p = 340μΩcm) and TCR<-55 ppml °C have been obtained. These CrO_(x) thin films may allow high temperature pressure sensor miniaturization to be achieved.