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이응안,서정환,노상수,Lee, Eung-Ahn,Seo, Jeong-Hwan,Noh, Sang-Soo 한국전기전자재료학회 2005 전기전자재료학회논문지 Vol.18 No.2
Ni oxide thin films were formed through annealing treatment in the atmosphere after Ni thin films deposited by a r.f. magnetron sputtering method and then electric and material properties were analyzed for application to thermal sensors. Resistivity of Ni thin films decreased after annealing treatment at 30$0^{\circ}C$ and 40$0^{\circ}C$ for five hours due to crystallization of Ni thin films but the value increased over 45$0^{\circ}C$ because of Ni thin film's oxidation. Resistivity values of Ni thin films were in the range of 10.5 $\mu$Ωcm/$^{\circ}C$ to 2.84${\times}$10$^4$$\mu$Ωcm/$^{\circ}C$ according to the degree of Ni oxidation. Also temperature coefficient of resistance(TCR) values of Ni oxide thin films depended on the degree of Ni oxidation such as 2,188 ppm/$^{\circ}C$ to 5,630 ppm/$^{\circ}C$ in the temperature range of 0 $^{\circ}C$∼150 $^{\circ}C$. The results demonstrate that Ni oxide thin films of annealing treatment at 40$0^{\circ}C$ for 5hours could be more advantageous than pure Ni thin films and Pt thin films from a point of output properties and TCR, applied to thermal sensors.
서정환,노상수,이응안,김광호,Seo, Jeong-Hwan,Noh, Sang-Soo,Lee, Eung-Ahn,Kim, Kwang-ho 한국전기전자재료학회 2005 전기전자재료학회논문지 Vol.18 No.3
This paper presents characteristics of CrOx thin-film, which were deposited on $Al_2$O$_3$ wafer by DC reactive magnetron sputtering in an argon-oxide atmosphere for high temperature applications. The present paper deals with a study of the technological characteristics of thin film resistors to provide a control in obtaining temperature coefficients of resistance of given value. The optimized condition of CrOx thin-film were thickness range of 2500 $\AA$ and annealing condition(350 $^{\circ}C$, 1 hr) in oxide partial pressure(3.5${\times}$10$^{-4}$ torr). Under optimum conditions, the CrOx thin-films is obtained a high resistivity, p=340 $\mu$Ωcm, a low temperature coefficient of resistance, TCR=-55 ppm/$^{\circ}C$. The CrOx thin films resistors which were fabricated in this paper had excellent characteristics as high precision resistors.
Formation of nickel oxide thin film and analysis of its electrical properties
노상수,서정환,이응안,이선길,박용준 한국센서학회 2005 센서학회지 Vol.14 No.2
Ni oxide thin films with thermal sensitivity superior to Pt and Ni thin films were formed through annealing treatment after Ni thin films were deposited by a r.f. magnetron sputtering method. Resistivity values of Ni oxide thin films were in the range of 10.5 μΩcm to 2.84 × 104 μΩcm according to the degree of Ni oxidation. Also temperature coefficient of resistance(TCR) values of Ni oxide thin films depended on the degree of Ni oxidation from 2,188 ppm/oC to 5,630 ppm/oC in the temperature range of 0~150 oC. Because of the high linear TCR and resistivity characteristics, Ni oxide thin films exhibit much higher sensitivity to flow and temperature changes than pure Ni thin films and Pt thin films.
노상수,서정환,이응안 한국전기전자재료학회 2009 Transactions on Electrical and Electronic Material Vol.10 No.4
The electrical properties and the microstructure of nitrogen-doped poly 3C-SiC films used for micro thermal sensors were studied according to different thicknesses. Poly 3C-SiC films were deposited by LPCVD (low pressure chemical vapor deposition) at 900oC with a pressure of 4 torr using SiH2Cl2 (100%, 35 sccm) and C2H2 (5% in H2, 180 sccm) as the Si and C precursors, and NH3 (5% in H2, 64 sccm) as the dopant source gas. The resistivity of the poly SiC films with a 1,530 Å thickness was 32.7 Ω-cm and decreased to 0.0129 Ω-cm at 16,963 Å. The measurement of the resistance variations at different thicknesses were carried out within the 25oC to 350oC temperature range. While the size of the resistance variation decreased when the films thickness increased, the linearity of the resistance variation improved. Micro heaters and RTD sensors were fabricated on a Si3N4 membrane by using poly 3C-SiC with a 1um thickness using a surface MEMS process. The heating temperature of the SiC micro heater, fabricated on 250 ㎛ⅹ250 ㎛ Si3N4 membrane was 410oC at an 80 mW input power. These 3C-SiC heaters and RTD sensors, fabricated by surface MEMS, have a low power consumption and deliver a good long term stability for the various thermal sensors requiring thermal stability.
서정환,노상수,이응안,정귀상,김광호 한국센서학회 2005 센서학회지 Vol.14 No.2
This paper present characteristics of chromium oxide thin-film as piezoresistive sensors, which were deposited on Si substrates by DC reactive magnetron sputtering in an argon-Oxide atmosphere for high temperature applications. The chemical composition, physical and electrical properties and thermal stability ranges of the CrOx sensing elements have studied. CrOx thin films with a linear gauge factor(GF≒15), high electrical resistivity(ρ=340μΩ㎝) and TCR〈-55ppm/℃ have been obtained. These CrOx thin films may allow high temperature pressure sensor miniaturization to be achieved.
노상수 ( Sang Soo Noh ),서정환 ( Jeong Hwan Seo ),이응안 ( Eung Ahn Lee ),이선길 ( Seon Gil Lee ),박용준 ( Yong Joon Park ) 한국센서학회 2005 센서학회지 Vol.14 No.1
N/A Ni oxide thin films with thermal sensitivity superior to Pt and Ni thin films were formed through annealing treatment after Ni thin films were deposited by a r.f. magnetron sputtering method. Resistivity values of Ni oxide thin films were in the range of 10.5 μQcm to 2.84 x 10⁴ μi2cm according to the degree of Ni oxidation. Also temperature coefficient of resistance(TCR) values of Ni oxide thin films depended on the degree of Ni oxidation from 2,188 ppm/℃ to 5,630 ppm/℃ in the temperature range of 0~150℃. Because of the high linear TCR and resistivity characteristics, Ni oxide thin films exhibit much higher sensitivity to flow and temperature changes than pure Ni thin films and Pt thin films.
서정환 ( Jeong Hwan Seo ),노상수 ( Sang Soo Noh ),이응안 ( Eung Ahn Lee ),정귀상 ( Gwiy Sang Chung ),김광호 ( Kwang Ho Kim ) 한국센서학회 2005 센서학회지 Vol.14 No.1
N/A This paper present characteristics of chromium oxide thin-film as piezoresistive sensors, which were deposited on Si substrates by DC reactive magnetron sputtering in an argon-Oxide atmosphere for high temperature applications. The chemical composition, physical and electrical properties and thermal stability ranges of the CrO, sensing elements have studied. CrO_(x) thin films with a linear gauge factor(GF≒15), high electrical resistivity (p = 340μΩcm) and TCR<-55 ppml °C have been obtained. These CrO_(x) thin films may allow high temperature pressure sensor miniaturization to be achieved.