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Si 기판에서 원자층 화학 기상 증착법으로 제조된 Al<sub>2</sub>O<sub>3</sub> 및 ZrO<sub>2</sub> 유전 박막의 결정학적 특성 및 계면 구조 평가
김중정,양준모,임관용,조홍재,김원,박주철,이순영,김정선,김근홍,박대규,Kim, Joong-Jung,Yang, Jun-Mo,Lim, Kwan-Yong,Cho, Heung-Jae,Kim, Won,Park, Ju-Chul,Lee, Soun-Young,Kim, Jeong-Sun,Kim, Geun-Hong,Park, Dae-Gyu 한국재료학회 2003 한국재료학회지 Vol.13 No.8
Crystallographic characteristics and interfacial structures of $Al_2$$O_3$and $ZrO_2$dielectric films prepared by atomic layer chemical vapor deposition (ALCVD) were investigated at atomic scale by high-resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS)/electron energy-loss spectroscopy (EELS) coupled with a field-emission transmission electron microscope. The results obtained from cross-sectional and plan-view specimens showed that the $Al_2$$O_3$film was crystallized by annealing at a high temperature and its crystal system might be evaluated as either cubic or tetragonal phase. Whereas the $ZrO_2$film crystallized during deposition at a low temperature of ∼$300^{\circ}C$ was composed of both tetragonal and monoclinic phase. The interfacial thickness in both films was increased with the increased annealing temperature. Further, the interfacial structures of X$ZrO_2$$O_3$and $ZrO_2$films were discussed through analyses of EDS elemental maps and EELS spectra obtained from the annealed films, respectively.
현상훈,김중정,김동준,조문호,박형호 한국세라믹학회 1997 한국세라믹학회지 Vol.34 No.3
극저 유전특성을 갖는 SiO2 에어로겔의 박막화의 층간 절연막으로써의 응용성이 연구되었다. 점도가 10~14cP인 SiO2 폴리머 졸을 이소프로판을 분위기 하에서 1000~7000m으로 p-Si(111) 웨이퍼 상에 스핀코팅한 습윤겔 박막을 25$0^{\circ}C$와 1160 psing 조건에서 초임계건조하여 0.5 g/㎤ 정도의 밀도(78% 기공율) 와 4000~21000$\AA$ 범위의 두께를 갖는 SiO2 에어로겔 박막을 제조하였다. 박막의 두께와 미세구조를 제어할 수 있는 주요 인자는 졸의 농도, 회전속도 및 습윤겔 숙성시간임을 알 수 있었다. SiO2 에어로겔 박막의 유전상수 값은 giga급 이상의 차세대 반도체 소자에 충분히 응용될 수 있을 정도로 낮은 2.0 정도이었다. The thin film processing and the applicability as a IMD material of SiO2 aerogels providing ultralow dielec-tric properties were studied. The SiO2 aerogel films with 0.5g/㎤ density (78% porosity) and 4000~21000$\AA$ thickness could be prepared at 25$0^{\circ}C$ and 1160 psig by supercritical drying of wet-gel films, which were spin-coated at the spin rate of 1000~7000 rpm on p-Si(111) wafer under the isopropanol atmosphere. The optimum viscosity of polymeric SiO2 sols for spin coating was in the range of 10~14 cP. The main fac-tors being able to control the film thickness and microstructures were found to be sol concentration, spin rpm, and aging time of wet-gel films. The dielectric constant of the SiO2 aerogel thin film was around 2.0 low enough to be applied to the next generation semiconductor device beyond the giga level.
이지현,채병규,김중정,이선영,박찬경 대한금속·재료학회 2015 ELECTRONIC MATERIALS LETTERS Vol.11 No.1
Dopant control becomes more difficult and critical as silicon devices becomesmaller. We observed the dopant distribution in a thermally annealed polysilicongate using Transmission Electron Microscopy (TEM) and Atom probe tomography(APT). Phosphorus was doped at the silicon-nitride-diffusion-barrier-layer-coveredpolycrystalline silicon gate. Carbon also incorporated at the gate for the enhancementof operation uniformity. The impurity distribution was observed using atom probetomography. The carbon atoms had segregated at grain boundaries and suppressedsilicon grain growth. Phosphorus atoms, on the other hand, tended to pile-up at theinterface. A 1-nm-thick diffusion barrier effectively blocked P atom out-diffusion.
Si (001) 기판에서 $N_2$처리에 의해 형성된 에피택셜 C49-$TiSi_2$상의 열적 거동과 결정학적 특성에 관한 연구
양준모,이완규,박태수,이태권,김중정,김원,김호정,박주철,이순영,Yang, Jun-Mo,Lee, Wan-Gyu,Park, Tae-Soo,Lee, Tae-Kwon,Kim, Joong-Jung,Kim, Weon,Kim, Ho-Joung,Park, Ju-Chul,Lee, Soun-Young 한국재료학회 2001 한국재료학회지 Vol.11 No.2
$N_2$처리에 의해 Si (001) 기판에 형성된 C49상의 구조를 갖는 에피택셜 $TiSi_2$상의 열적 거동과 결정학적 특성을 X선 회절법 (XRD)과 고분해능 투과전자현미경법 (HRTEM)으로 조사하였다. 에피택결 $C49-TiSi_2$상은 $1000^{\circ}C$ 정도의 고온에서도 안정상인 C54상으로 상변태하지 않고 형태적으로도 고온 특성이 우수하다는 것이 밝혀졌다. HRTEM 결과로부터 에피택결 $TiSi_2$상과 Si 사이의 결정학적 방위관계는 (060) [001]TiSi$_2$//(002) [110]Si임을 알 수 있었고 계면에서의 격자 변형에너지는 misfit 전위의 형성에 의하여 해소되는 것을 확인할 수 있었다. 또한 HRTEM상의 해석과 원자 모델링을 통하여 Si에서 에피택셜 C49-TiSi$_2$상의 형성기구와 C49상의 (020) 면에 존재하는 적층결함을 고찰하였다. The thermal behavior and the crystallographic characteristics of an epitaxial $C49-TiSi_2$ island formed in a Si (001) substrate by $N_2$, treatment were investigated by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). It was found from the analyzed results that the epitaxial $C49-TiSi_2$ was thermally stable even at high temperature of $1000^{\circ}C$ therefore did not transform into the C54-stable phase and did not deform morphologically. HRTEM results clearly showed that the epitaxial $TiSi_2$ phase and Si have the orientation relationship of (060)[001]$TiSi_2$//(002)[110]Si, and the lattice strain energy at the interface was mostly relaxed by the formation of misfit dislocations. Furthermore, the mechanism on the formation of the epitaxial $_C49-TiSi2$ in Si and stacking faults lying on the (020) plane of the C49 Phase were discussed through the analysis of the HRTEM image and the atomic modeling.