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김용빈,박승부,이상철,박영권 한국공업화학회 2023 Journal of Industrial and Engineering Chemistry Vol.120 No.-
In this study, the PM2.5, prediction performances of long short-term memory (LSTM), gated recurrentunit (GRU), and bidirectional LSTM (Bi-LSTM) were compared using data from Seoul, Daejeon, andBusan, which are representative cities in Korea. The data analysis period was from 9:00 on May 16,2014, to 23:00 on December 31, 2021, based on data at 1 h intervals. The causal factors affecting thechange in PM2.5 of three cities in Korea, and five major cities in China were determined. The analysisrevealed that the three models showed similarly high performances in short-term prediction within24 h (R2 0.9). The Bi-LSTM model using both past and future time information showed high predictionaccuracy for long-term prediction (R2 0.6). Using the PM2.5 data of the five major Chinese cities, it wasconfirmed that the accuracy of the PM2.5 prediction model for Seoul, Daejeon, and Busan improved. Thedeep learning model showed a high accuracy even when the Fine Dust Act measures were implemented. This study can facilitate governments to prepare measures against air pollution with a high regional predictionperformance by identifying the causal factors affecting PM2.5, specific to the city, and designingdifferent models for each forecasting period.
방송장비의 디지털화와 위성방송-멀티미디어 확산되면 본격 디지털 시대
김용빈,Kim, Yong-Bin 한국정보통신집흥협회 1996 정보화사회 Vol.104 No.-
위성과 케이블 방송에서 먼저 시행되면서 지상파방송에 사용될 전망으로 예측하고 있었으나 전자 산업의 발전으로 지금 단계에서는 같이 사용될 것으로 전망되고 있다. 멀티미디어 서비스로 확산되면서 본격적인 디지탈 시대를 맞이하게 될 것이다.
김용빈,김순철,이수곤 대한건축학회 1998 大韓建築學會論文集 : 構造系 Vol.14 No.4
철근콘크리트 구조물의 장기 비탄성 거동의 주요 원인으로는 크리이프 (creep), 건조수축(shrinkage) 및 열 팽창(thermal dilatation)등이 있으며, 이러한 원인으로 인하여 구조물에 과다한 변형을 유발하여 구조물이 파괴에 이르게 하기도 한다. 이러한 장 기 변형의 원인을 등가하중으로 치환하여 시간에 따른 부재의 부재력과 기둥의 수축 변화를 알아 보기로 한다. 이러한 변화를 알아 보기위해 사용한 예측 모델식으로는 ACI 모델식, CEB-FIP 모델식(1990), B3 모델식 등 3가지을 이용하였으며, 이들 3가지 예측 모델식 모두 다 건물 완공후 1년이내에서는 부재력과 기둥의 수직 처짐이 급격히 일어남을 알 수 있었으 며, 1년이후에는 변화가 점진적으로 증가함을 알 수 있었다.
Challenges for Nanoscale MOSFETs and Emerging Nanoelectronics
김용빈 한국전기전자재료학회 2010 Transactions on Electrical and Electronic Material Vol.11 No.3
Complementary metal-oxide-semiconductor (CMOS) technology scaling has been a main key for continuous progress in silicon-based semiconductor industry over the past three decades. However, as the technology scaling enters nanometer regime, CMOS devices are facing many serious problems such as increased leakage currents, difficulty on increase of on-current, large parameter variations, low reliability and yield, increase in manufacturing cost, and etc. To sustain the historical improvements, various innovations in CMOS materials and device structures have been researched and introduced. In parallel with those researches, various new nanoelectronic devices, so called “Beyond CMOS Devices,” are actively being investigated and researched to supplement or possibly replace ultimately scaled conventional CMOS devices. While those nanoelectronic devices offer ultra-high density system integration, they are still in a premature stage having many critical issues such as high variations and deteriorated reliability. The practical realization of those promising technologies requires extensive researches from device to system architecture level. In this paper, the current researches and challenges on nanoelectronics are reviewed and critical tasks are summarized from device level to circuit design/CAD domain to better prepare for the forthcoming technologies.