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김성진,이상훈,최복길,성만영,Kim, Seong-Jeen,Lee, Sang-Hoon,Choi, Bok-Gil,Sung, Man-Young 한국전기전자재료학회 2004 전기전자재료학회논문지 Vol.17 No.6
Porous silicon(PS) has received much attention as a sensitive material of chemical sensors because of its large internal surface area. In this work, we fabricated gas-sensing devices based on the porous silicon layer which could be applicable to the measurement of blood alcohol content(BAC), and estimated their electrical properties. The structure of the sensor is similar to an MIS (metal-insulator-semiconductor) diode and consists of thin Au/oxidized PS/PS/p-Si/Al, where the p-Si substrate is etched anisotropically to reduce the thickness. We measured C-V curves from two types of the samples with the PS layer treated by the different anodization current density of 60 or 100 mA/cm$^2$, in order to compare the sensitivity. As a result, the magnitude and variation of capacitances from the devices with the PS formed under the current density of 100 mA/cm$^2$ were found to be more detectable due to the larger internal surface.
김성진,조규환,김성엽,전재옥,이상훈,최복길,Kim, Seong-Jeen,Cho, Kyu-Hwan,Kim, Seong-Yeob,Jeon, Jae-Ok,Lee, Sang-Hoon,Choi, Bok-Gil 한국전기전자재료학회 2005 전기전자재료학회논문지 Vol.18 No.5
Carbon nanotubes (CNTs) have been well known as electron emitters for field emission applications like FEDs. In this work, we propose as new application a vacuum sensor using CNTs and discuss its current-voltage characteristics as a function of vacuum pressure. The proposed sensor, based on electrical discharge theories in air gap well-known as Townsend theory and as Paschen's law, works by figuring out the variation of the dark current and the initial breakdown voltage depending on the vacuum pressure of air which can ionize through collisions with the electrons accelerated by high electric field.
155 Mb/s BiCMOS 멀티플렉서-디멀티플렉서 소자
이상훈,김성진,Lee, Sang-Hoon,Kim, Seong-Jeen 한국통신학회 2003 韓國通信學會論文誌 Vol.28 No.1A
본 논문에서는 155 Mb/s급 멀티플렉서-디멀티플렉서를 단일소자로 설계하였다. 이 소자는 초고속 전송망의 전송노드 역할을 하는 2.5 Gb/s SDH 전송시스템에 적용되어 51 Mb/s의 병렬 데이터들을 155 Mb/s의 직렬 데이터로 다중화 하거나 155 Mb/s 직렬 데이터들을 51 Mb/s의 병렬 데이터로 역 다중화 하는 기능을 수행한다 소자의 저속부는 TTL로 접속되고 고속부는 100K ECL로 접속되며 0.7${\mu}m$BiCMOS gate array로 제작되었다 설계 제작된 소자는 180˚의 155 Mb/s 데이터 입력 phase margin을 가지며 출력 데이터 skew는 470ps, 소비전력은 2.0W 이하의 특성을 보인다. This paper describes the design of a 155 Mb/s multiplexer-demultiplexer chip. This device for a 2.5 Gb/s SDH based transmission system is to interleave the parallel data of 51 Mb/s into 155 Mb/s serial data output, and is to deinterleave a serial input bit stream of 155 Mb/s into the parallel output of 51 Mb/s The input and output of the device are TTL compatible at the low-speed end, but 100K ECL compatible at the high-speed end The device has been fabricated with a 0.7${\mu}m$ BiCMOS gate array The fabricated chip shows the typical phase margin of 180 degrees and output data skew less than 470 ps at the high-speed end. And power dissipation is evaluated under 2.0W.