http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
금민종,김영철,서화일,김경환,Keum Min-Jong,Kim Yeong-Cheol,Seo Hwa-Il,Kim Kyung-Hwan 한국반도체디스플레이기술학회 2006 반도체디스플레이기술학회지 Vol.5 No.1
AIN thin films were prepared on amorphous glass and $SiO_2(1{\mu}m)/Si(100)$ substrate by the facing targets sputtering (FTS) apparatus, which can provide high density plasma, a high deposition rate at a low working gas pressure. The AIN thin films were deposited at a different nitrogen gas flow rate ($1.0{\sim}0.3$) and other sputtering parameters were fixed such as sputtering power of 200w, working pressures of 1mTorr and AIN thin film thickness of 800 nm, respectively. The thickness and crystallographic characteristics of AIN thin films as a function of $N_2$ gas flow rate $[N_2/(N_2+Ar)]$ were measured by $\alpha$-step and an X-ray diffraction (XRD) instrument. And the c-axis preferred orientations were evaluated by rocking curve. In the results, we could prepared the AIN thin film with c-axis preferred orientation of about $5^{\circ}$ on substrate temperature R.T. at nitrogen gas flow rate 0.7.
대향타겟식 스퍼터링법을 이용한 TOLED용 ITO 박막의 산소 가스 의존성
금민종,김경환,Keum Min-Jong,Kim Kyung-Hwan 한국전기전자재료학회 2006 전기전자재료학회논문지 Vol.19 No.1
In case of preparation of ITO thin film for using top electrode of Top-emitting Organic Light Emitting Diodes(TOLEDs), the ITO thin film should be prepared at room temperature and low oxygen gas flow condition in order to reduced the damage of organic layer due to the bombardment of highly energetic particles such as negative oxygen ions which accrued from the plasma. In this study, the ITO thin film with high optical transmittance and low resistivity prepared as a function of oxygen gas (0 ${\~}$ 0.8 sccm) and Ar gas was fixed at 20 sccm by the Facing Targets Sputtering (FTS) method. The electrical and optical properties of ITO thin films were measured by Hall effect measurement, UV/VIS spectrometer, respectively In the results, we obtained the ITO thin film with lowest resistivity($3{\times}10^{-4} {\Omega}{\cdot} cm$) at oxygen gas flow 0.2 sccm and optical transmittance over $80\%$ at oxygen gas flow over 0.2 sccm.
금민종,김경환,Keum, Min-Jong,Kim, Kyung-Hwan 한국전기전자재료학회 2005 전기전자재료학회논문지 Vol.18 No.8
Al electrode for OLED was deposited by FTS (Facing Targets Sputtering) system which can deposit thin films with low substrate damage. The Al thin films were deposited on the cell (LiF/EML/HTL/Bottom electrode) as a function of working gas such as Ar or Ar+kr mixed gas. Also Al thin films were prepared with working gas pressure (1, 6 mTorr). The film thickness and I-V curve of Al/cell were measured and evaluated. In the results, when Al thin films were deposited using pure Ar gas, the turn-on voltage of Al/cell was about 11 V. And using the Ar:Kr($75\%:25\%$) mixed gas, the turn-on voltage of Al/cell decreased to about 7 V.
김건희,금민종,김한기,손인환,장경욱,이원재,최형욱,박용서,김경환,Kim, Geon-Hi,Keum, Min-Jong,Kim, Han-Ki,Son, In-Hwan,Jang, Kyung-Wook,Lee, Won-Jae,Choi, Hyung-Wook,Park, Yong-Seo,Kim, Kyung-Hwan 한국전기전자재료학회 2004 전기전자재료학회논문지 Vol.17 No.11
The ITO thin films were prepared by the FTS(Facing Targets Sputtering) system. The ITO thin films are deposited by changing the input current and working gas pressure. Then, electric characteristics, transmittance and surface roughness of ITO thin films were measured by Hall effect measurement, UV-VIS spectrometer and AFM. As a result, the ITO thin film was fabricated with resistivity 6xl0$^{-4}$ Ωㆍcm, carrier mobility 52.11 $\textrm{cm}^2$/Vㆍsec, carrier concentration 1.72 x $10^{20}$ $cm^{-3}$ transmittance over 85 % of ITO film at working gas pressure 1 mTorr and input current 0.6 A.
성하윤,양진석,금민종,손인환,김경환,Seong, Ha-Yoon,Yang, Jin-Seok,Keum, Min-Jong,Son, In-Hwan,Kim, Kyung-Hwan 대한전기학회 2001 전기학회논문지C Vol.49 No.5
Piezoelectric ZnO thin films by Facing Targets Sputtering(FTS) method were deposited on slide glass. The Facing Targets Sputtering system can deposit thin film at plasma-free condition and change the deposition condition in wide range. The characteristics of ZnO thin films changed with power, working pressure and substrate temperature were investigated by XRD(x-ray diffractometer), alpha-step(Tencor) and SEM(Scanning Electron Microscopy) analyses. In the results, we suggest that FTS system is very suitable for the preparation of high quality ZnO thin films with good c-axis orientation.
산소 가스 유량비에 따라 제작한 AI이 도핑된 ZnO 박막
조범진(Bum-Jin Cho),금민종(Min-Jong Keum),김경환(Kyung-Hwan Kim) 대한전기학회 2006 대한전기학회 학술대회 논문집 Vol.2006 No.10
We prepared the AZO thin film with different O₂ gas flow rate. the AZO thin films were deposited on glass substrate at room temperature, working gas pressure of 1m Torr. the electrical, structural and optical properties of AZO thin films were investigated by using Hall Effect measurement system, X-ray Diffractometer (XRD) and UV-VIS spectrometer. From the results, we could obtain that AZO thin film with low resistivity of 8.5×10?⁴Ω㎝ was exhibited in specific O₂ gas flow rate. Also, the transmittance of over 80% in visible range was observed in specific O₂ gas flow rate. In all of the AZO thin film with the transmittance of over 80%, diffraction peak of (002) direction was observed, while amorphous peak was observed in the AZO thin film with the low transmittance.
조범진(Bumjin Cho),금민종(Min-jong Keum),김경환(Kyung-hwan Kim) 대한전기학회 2006 대한전기학회 학술대회 논문집 Vol.2006 No.7
Because AZO thin film has the potential applications, Preparing AZO thin films on the polymer substrate has been widely studied. In this study, we prepared AZO thin films on polyethersulfon (PES) at room temperature. The AZO thin films were prepared at O₂ gas flow rate of 0.05 and sputtering power of l00W with different film thickness by facing targets sputtering method. The electrical, optical and crystallographic properties of AZO thin films were measured by Hall effect measurement system, UV/VIS spectrometer, SEM and XRD. From the results, we obtained AZO thin films with a low resistivity, a transmittance of over 80% and c-axis preferred orientation.