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다층 InAs 양자점을 이용한 장파장 적외선 수광소자에 관한 연구
김종욱,오재응,홍성철,Kim, Jong-Wook,Oh, Jae-Eung,Hong, Seong-Chul 대한전자공학회 2000 電子工學會論文誌-SD (Semiconductor and devices) Vol.37 No.8
Long-wavelength infrared (LWIR) detectors made of self-assembled quantum dots embedded in the channel region of high electron mobility transistor (HEMT) is demonstrated. Above 180 K, the detector shows low dark currents due to strong confinement effect of electrons in InAs quantum dots and exhibits the broad spectral response ranging from 7 mm to 11 mm. The peak detectivity ($D^*$) of $1.93{\times}10^{10}cmHz^{1/2}/W$ is obtained at 9.4 mm. The photocurrent characteristics as a function of applied bias are similar to that of normal FETs, while the photocurrent decreases as the applied electric field exceeds $2{\times}10^3V/cm$ because of the increased dark current. 분자선결정성장법을 이용하여 자기구성 양자점들을 high electron mobility transistor (HEMT)의 체널 영역에 삽입하여, 양자점내의 inter-subband transition을 이용한 전파장 적외선 수광소자를 제작하였다. 제작된 소자는 180 K 이상의 온도에서 InAs 양자점의 전자에 대한 강한 구속력으로 인해 낮은 암전류 특성을 보이며 7${\mu}m$에서 11${\mu}m$까지의 넓은 수광영역을 나타내었다. 9.4${\mu}m$에서 peak 광전류가 검출되었으며 이때의 검출율은 $1.93{\times}10^{10}cmHz^{1/2}/W$ 였다. 장파장 적외선 검출에 따른 광전류는 가해진 전압에 대하여 전계효과트랜지스터와 같은 전류-전압 특성을 가지며, 인가된 전압이 증가함에 따라 증가된 암전류에 의하여 광전류가 감소하는 특성을 보여주고 있다.
BTMSM/O<sub>2</sub> 유량변화에 따른 SiOCH 박막의 유전상수 특성
김종욱,황창수,김홍배,Kim, Jong-Wook,Hwang, Chang-Su,Kim, Hong-Bae 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.4
We have Manufactured the low-k dielectric interlayer fabricated by plasma enhanced chemical vapor deposition (PECVD), The thin film of SiOCH is studied correlation between components and Dielectric constant. The precursor was evaporated and introduced with the flow rates from 16 sccm to 25 sccm by 1sccm step in the constant flow rate of 60 sccm $O_2$ in process chamber. The chemical characteristics of SiOCH were analyzed by measuring FT/IR absorption lines and obtained each dielectric constant measuring C-V. Then compare respectively. ILD of BTMSM/$O_2$ could have low dielectric constant about $k\sim2$, and react sensitively. Also dielectric constant could be decreased by the effects of decreasing $CH_3$ and growing Si-O-Si(C) after annealing process.
BTMSM/O<sub>2</sub> 유량변화에 따른 SiOCH 박막 결합모드의 2차원 상관관계 특성
김종욱,황창수,김홍배,Kim, Jong-Wook,Hwang, Chang-Su,Kim, Hong-Bae 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.4
The dielectric characteristics of low-k interlayer dielectric materials was fabricated by plasma enhanced chemical vapor deposition (PECVD). BTMSM precursor was evaporated and introduced with the flow rates from 16 sccm to 25 sccm by 1sccm step in the constant flow rate of 60 sccm $O_2$ in process chamber. Manufactured samples are analyzed components by measuring FT/IR absorption lines. Decomposition each Microscopic structures through two-dimensional correlation analysis about mechanisms for the formation of SiOCH in $SiOCH_3$, Si-O-Si and Si-$CH_3$ bonding group and analyzed correlation between the micro-structure of each group. It is a tendency that seems to be growing of Si-O-Ci(C) bonding group and narrowing of Si-O-$CH_3$ bonding group relative to the increasing flow-rate BTMSM. The order of changing sensitivity about changes of flow-rate in Si-O-Si(C) bonding group is cross link mode$(1050cm^{-1})$ $\rightarrow$ open link mode$(1100cm^{-1})\rightarrow$ cage link mode $(1140cm^{-1})$.
RF magnetron sputtering법으로 제조한 Al doped ZnO 박막의 산소함량과 압력변화에 따른 전기적 특성 변화
김종욱,김홍배,Kim, Jong-Wook,Kim, Hong-Bae 한국반도체디스플레이기술학회 2010 반도체디스플레이기술학회지 Vol.9 No.4
The AZO thin films were deposited on the corning 1737 glass plate by the RF magnetron sputtering and effects of working pressure and oxygen contents on the electrical properties were investigated. XRD spectra showed a preferred orientation along the c-axis and a minimum FWHM for the 70mTorr. From the surface analysis (AFM), the number of crystal grain of AZO thin film increased as working pressure increased. The film deposited with 70mTorr of working pressure showed n-type semiconductor characteristic having suitable resistivity $-1.59{\times}10^{-2}{\Omega}cm$, carrier concentration $-10.1{\times}10^{19}cm^{-3}$, and mobility $-4.35cm^2V^{-1}s^{-1}$ while other films by 7 mTorr, 20 mTorr of working pressure closed to metallic films. The films including the oxygen represent stoichiometric composition similar to the oxide. The transmittance of the film was over 85% in the visible light range regardless of the changes in working pressure and oxygen contents.
김종욱,조성구 ( Jong Wook Kim,Seong Koo Cho ) 한국축산학회 1981 한국축산학회지 Vol.23 No.6
In order to study the keeping quality of the market milk sold in Cheongju area, 8 samples from different plants were investigated into their biological and physiochemical properties during a period of 6 days in refrigeration. The results obtained are as follows: 1. The number of live bacteria per milliliter of the market milk until the 5th day of refrigeration were below the regulation number, 40,000. 2. The number of coliform group bacteria per milliliter until the 4th day of refrigeration were below the regulation number, 10. 3. The number of psychrophilic bacteria per milliliter were increased in accordance with the lapse of time in 5 samples, but there was no definite tendency in 3 samples. 4. Until the 4th day of refrigeration, 6 samples showed negative results in the alcohol test, but 2 samples showed no definite tendency. 5. Until the 2nd day of refrigeration, all samples showed negative results in the boiling test, but a small number of samples showed negative results after the 3rd day. 6. The titratable acidity of 7 samples were above the regulation value, 0.18% but only one sample showed below the regulation value. 7. The specific gravity were 1.028 - 1.033, within the regulation value. Although the bacteriological quality of the market milk examined were suitable for consumption until the 4th day of refrigeration, the low quality of physico-chemical properties suggests the necessity of quality improvement.
김종욱,황창수,박용헌,김홍배,Kim, Jong-Wook,Hwang, Chang-Su,Park, Yong-Heon,Kim, Hong-Bae 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.1
We studied the electrical characteristics of low-k SiOCH interlayer dielectric(ILD) films fabricated by plasma enhanced chemical vapor deposition (PECVD). BTMSM precursor was evaporated and introduced with the flow rates from 16 sccm to 25 sccm by 1 sccm step with the constant flow rate of 60 sccm $O_2$ in process chamber. The vibrational groups of SiOCH thin films were analyzed by FT!IR absorption lines, and the dielectric constant of the low-k SiOCH thin films were obtained by measuring C-V characteristic curves. The heat treatment on SiOCH thin films reduced the FTIR absorption intensity of the Si-O-$CH_3$ bonding group and Si-$CH_3$ bonding group but increased the intensity of Si-O-Si(C) bonding group. The SiOCH ILD films could have low dielectric constant $k\;{\simeq}\;2$ and also be reduced further by decreasing the $CH_3$ group density and increasing Si-O-Si(C) group density through annealing process.
고전압과 고전력 응용을 위한 $Al_{0.3}Ga_0.7N/GaN$ 이종접합 전계효과 트랜지스터의 제작 및 특성에 관한 연구
김종욱,이재승,김창석,정두찬,이재학,신진호,Kim, Jong-Wook,Lee, Jae-Seung,Kim, Chang-Suk,Jeong, Doo-Chan,Lee, Jae-Hak,Shin, Jin-Ho 대한전자공학회 2001 電子工學會論文誌-SD (Semiconductor and devices) Vol.38 No.8
분자선 결정 성장법을 이용하여 성장된 서로 다른 장벽층의 두께를 갖는 $Al_{0.3}Ga_{0.7}N$ heterojunction field effect transistors (HFETs) 를 제작하여 그 특성을 비교, 관찰하였다. $Al_{0.3}Ga_{0.7}N$층의 두께에 따른 특성의 비교로부터 최적의 2 차원 전자개스 (2 dimensional electron gas) 를 가질 수 있는 $Al_{0.3}Ga_{0.7}N$/GaN HFET 소자 구조를 얻을 수 있었다. $L_g=0.6$ ${\mu}m$ 와 $W_g=34\;{\mu}m$ $Al_{0.3}Ga_{0.7}N$/GaN (20 nm/2 mm) HFET에서 Imax ($V_{gs}=1\;V$) 와 $G_{m,maX}$는 각각 1.155 A/mm 및 250ms/${\mu}m$ 이었으며 $F_t=13$ GHz 와 $F_{max}=48$ GHz의 우수한 고주파 특성을 얻을 수 있었고 2 inch 기판상에서 제작된 소자들은 5% 이하의 매우 균일한 DC 특성을 나타내었다. 이와 더불어 게이트-드레인 간의 간격에 따른 소자의 특성을 관찰함으로서 소자의 항복전압과 고주파 특성과의 상관관계를 고찰하였다. We report on the fabrication and characterization of $Al_{0.3}Ga_{0.7}N$ HFETs with different barrier layer thickness which were grown using plasma-assisted molecular beam epitaxy (PAMBE). The barrier thickness of $Al_{0.3}Ga_{0.7}N$/GaN HFETs could be optimized in order to maximize 2 dimensional electron gas induced by piezoelectric effect without the relaxation of $Al_{0.3}Ga_{0.7}N$ layer. $Al_{0.3}Ga_{0.7}N$/GaN (20 nm/2 mm) HFET with 0.6 ${\mu}m$-long and 34 ${\mu}m$-wide gate shows saturated current density ($V_{gs}=1\;V$) of 1.155 A/mm and transconductance of 250 ms/mm, respectively. From high frequency measurement, the fabricated $Al_{0.3}Ga_{0.7}N$/GaN HFETs showed $F_t=13$ GHz and $F_{max}=48$ GHz, respectively. The uniformity of less than 5% could be obtained over the 2 inch wafer. In addition to the optimization of epi-layer structure, the relation between breakdown voltage and high frequency characteristics has been examined.