Key issues in gynecologic cancer survivorship

( Jaeman Bae ) 대한산부인과학회 2022 서울심포지움 Vol.27 No.-

Dose- and time-related effects of caffeine on the testis in immature male rats

Bae, Jaeman,Choi, Hyeonhae,Choi, Yuri,Roh, Jaesook KINOKUNIYA CO LTD 2017 EXPERIMENTAL ANIMALS Vol.66 No.1

<P>We previously showed that prepubertal chronic caffeine exposure adversely affected the development of the testes in male rats. Here we investigated dose- and time-related effects of caffeine consumption on the testis throughout sexual maturation in prepubertal rats. A total of 80 male SD rats were randomly divided into four groups: controls and rats fed 20, 60, or 120 mg caffeine/kg/day, respectively, via gavage for 10, 20, 30, or 40 days. Preputial separation was monitored daily before the rats were sacrificed. Terminal blood samples were collected for hormone assay, and testes were grossly evaluated and weighed. One testis was processed for histological analysis, and the other was collected to isolate Leydig cells. Caffeine exposure significantly increased the relative weight of the testis in a dose-related manner after 30 days of exposure, whereas the absolute testis weight tended to decrease at the 120 mg dose of caffeine. The mean diameter of the seminiferous tubules and height of the germinal epithelium significantly decreased in the caffeine-fed groups after 40 days of caffeine exposure, which was accompanied by a reduced BrdU incorporation rate in germ cells. In addition, caffeine intake significantly reduced <I>in vivo</I> and <I>ex vivo</I> testosterone production in a dose-related manner. Our results demonstrate that caffeine exposure during sexual maturation alter the testicular microarchitecture and also slow germ cell proliferation even at the 20 mg dose level. Furthermore, caffeine may act directly on Leydig cells and interfere with testosterone production in a dose-related manner, consequently delaying onset of sexual maturation.</P>

Natural history of persistent high-risk human papillomavirus infections in Korean women

Bae, Jaeman,Seo, Sang-Soo,Park, Young-Soo,Dong, Seung-Myung,Kang, Sokbom,Myung, Seung-Kwon,Park, Sang-Yoon Elsevier 2009 Gynecologic oncology Vol.115 No.1

<P><B>Abstract</B></P> <P><B>Objective</B></P> <P>This prospective study was performed to evaluate the clearance of high-risk human papillomavirus (HPV) infection and incidence of cytologic abnormality and cervical intraepithelial neoplasia (CIN) during the follow-up of persistent infection in Korean women.</P> <P><B>Methods</B></P> <P>A total of 4170 women who were screened for cervical cancer, were aged 30 years or older, had no abnormal last Pap smear results for 3 years, had no history of treatment for cervical neoplastic disease, and were not pregnant were analyzed for high-risk HPV prevalence using the Hybrid capture (HC) II assay. The 224 women with normal cytology but positive for high-risk HPV DNA using the HC-II assay were analyzed for their clearance of HPV infection.</P> <P><B>Results</B></P> <P>The median time to clearance in women with initially normal cytology was 7.5 months from initial detection (95% CI, 5.2–9.8 months). There were significant differences in the median time to clearance (4.5 vs. 14.5 months, <I>p</I> <0.001) of high-risk HPV infection between women with the initial relative light unit/cutoff (RLU/CO) ratio values <10.0 and ≥10.0, as determined by the HC-II assay. In Kaplan–Meier analysis, probability of development of cytologic abnormalities, CIN and high-grade CIN was 38.2%, 21.7% and 8.5% respectively at 24 months of persistent high-risk HPV infection.</P> <P><B>Conclusion</B></P> <P>The prevalence and clearance of high-risk infection in Korean women was similar to that in Western countries. Persistent high-risk HPV infection was associated with high viral load.</P>

Extraction of Separated Source and Drain Resistances in Amorphous Indium–Gallium–Zinc Oxide TFTs Through <tex> $C$</tex>– <tex> $V$</tex> Characterization

Hagyoul Bae,Sungchul Kim,Minkyung Bae,Ja Sun Shin,Dongsik Kong,Hyunkwang Jung,Jaeman Jang,Jieun Lee,Dae Hwan Kim,Dong Myong Kim IEEE 2011 IEEE electron device letters Vol.32 No.6

<P>Considering asymmetry caused by layout, process, and device degradation, separate extraction of the source and drain resistances, i.e., <I>RS</I> and <I>RD</I>, respectively, from the total resistance <I>R</I><SUB>TOT</SUB> is very important in the design, modeling, and characterization of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). Due to the insulated gate structure, however, separate extraction is difficult through direct-current <I>I</I>-<I>V</I> characterization. In this letter, we propose a simple and useful technique for separate extraction of <I>RS</I> from <I>RD</I> in a-IGZO TFTs through a two-terminal parallel-mode <I>C</I> -<I>V</I> technique. We experimentally verified the validity of the proposed technique by comparing the result with the source-to-drain resistance from the <I>I</I>-<I>V</I> characteristics.</P>

Modeling and Separate Extraction of Gate-Bias- and Channel-Length-Dependent Intrinsic and Extrinsic Source–Drain Resistances in MOSFETs

Hagyoul Bae,Jaeman Jang,Ja Sun Shin,Daeyoun Yun,Jieun Lee,Tae Wan Kim,Dae Hwan Kim,Dong Myong Kim IEEE 2011 IEEE electron device letters Vol.32 No.6

<P>A new technique for a separate extraction of the current-path-dependent resistance (R<SUB>SD0</SUB>) from the contact-dependent source and drain resistances (R<SUB>Se</SUB> and R<SUB>De</SUB>) is reported for a single MOSFET. We also report a technique for a separation of V<SUB>GS</SUB>-dependent source and drain resistance (R<SUB>SDi</SUB>) from the V<SUB>GS</SUB>- and L<SUB>eff</SUB>-dependent channel resistance (R<SUB>ch</SUB>) with multiple MOSFETs. We confirm the proposed techniques applied to n-channel MOSFETs with various W/L combinations and obtain R<SUB>Se</SUB> = 10.5 - 12.4 Ω , R<SUB>De</SUB> ≅ 12.7 Ω, and R<SUB>SD0</SUB> = 4.7 Ω for W = 10 μm. V<SUB>GS</SUB>-dependent but L-independent R<SUB>SDi</SUB> is extracted to be 2.8 - 4.2 Ω.</P>

Separate Extraction of Source, Drain, and Substrate Resistances in MOSFETs With Parasitic Junction Current Method

Hagyoul Bae,Seok Cheon Baek,Sunyeong Lee,Jaeman Jang,Ja Sun Shin,Daeyoun Yun,Hyojong Kim,Dae Hwan Kim,Dong Myong Kim IEEE 2010 IEEE electron device letters Vol.31 No.11

<P>The separate extraction of asymmetric source (<I>R</I><SUB>S</SUB>) and drain (<I>R</I><SUB>D</SUB>) resistances caused by the variations in the layout, process, and device degradation is important in the practical modeling and characterization of MOSFETs and their integrated circuits. We propose a simple “parasitic junction current method” (PJCM) for the separate extraction of <I>R</I><SUB>S</SUB>, <I>R</I><SUB>D</SUB>, and <I>R</I><SUB>SUB</SUB> (substrate resistance) in MOSFETs. We applied the proposed PJCM to n-channel MOSFETs with different <I>W</I>/<I>L</I> combinations and verified its usefulness in the robust extraction of <I>R</I><SUB>S</SUB>, <I>R</I><SUB>D</SUB>, and <I>R</I><SUB>SUB</SUB>.</P>

Characterization of Density-of-States in Polymer-based Organic Thin Film Transistors and Implementation into TCAD Simulator

Jaehyeong Kim,Jaeman Jang,Minkyung Bae,Jaewook Lee,Woojoon Kim,Inseok Hur,Hyun Kwang Jeong,Dong Myong Kim,Dae Hwan Kim 대한전자공학회 2013 Journal of semiconductor technology and science Vol.13 No.1

In this work, we report extraction of the density-of-states (DOS) in polymer-based organic thin film transistors through the multi-frequency C-V spectroscopy. Extracted DOS is implemented into a TCAD simulator and obtained a consistent output curves with non-linear characteristics considering the contact resistance effect. We employed a Schottky contact model for the source and drain to fully reproduce a strong nonlinearity with proper physical mechanisms in the output characteristics even under a very small drain biases. For experimental verification of the model and extracted DOS, 2 different OTFTs (P3HT and PQT-12) are employed. By controlling the Schottky contact model parameters in the TCAD simulator, we accurately reproduced the nonlinearity in the output characteristics of OTFT.

Laparoscopic Para-aortic Lymphadenectomy (LPAL): Standard Surgical Boundary and Technique

( Joong Sub Choi ),( Jaeman Bae ),( Won Moo Lee ),( Un Suk Jung ),( Jeong Min Eom ),( A Ra Koh ) 대한산부인과학회 2016 대한산부인과학회 학술대회 Vol.102 No.-

목적: Teach a new procedure. 방법: We conducted a retrospective chart review of 324 patients with gynecologic malignancies who had undergone LPAL by a single surgical team between November 2003 and May 2015. 결과: Three hundred seventeen patients underwent LPAL as part of their staging, restaging or debulking surgery. Seven patients with isolated para-aortic lymph node recurrence underwent a repeat LPAL. The median age and BMI were 54 years (range 28-81 years) and 26.0 kg/m2 (range 20.3 -37.2 kg/m2), respectively. The median operating time was 60 minutes (range 24-135 minutes), and the median number of harvested para-aortic lymph nodes was 12 (range 6-49). There were eleven cases of complications: five of major vessel injuries (three IVC, one aorta, and one common iliac vein), two lymphocysts, two cases of chylous ascites, a cisterna chyli rupture, and one case of ureteric injury. There were two conversions to laparotomy: one left common iliac vein laceration that needed to be repaired and removal of an enlarged para-aortic lymph node completely. 결론: It is feasible and efficient to perform LPAL to the left renal vein level for women with gynecologic malignancies by well-trained gynecologic oncology surgeon according to our suggested standard surgical boundary.

Differential Body-Factor Technique for Characterization of Interface Traps in MOSFETs

Daeyoun Yun,Minkyung Bae,Jaeman Jang,Hagyoul Bae,Ja Sun Shin,Euiyeon Hong,Jieun Lee,Dae Hwan Kim,Dong Myong Kim IEEE 2011 IEEE electron device letters Vol.32 No.9

<P>A differential body-factor technique (DBT) is proposed for characterization of interface traps in MOSFETs employing the differential body factor <I>dm</I>/<I>dV</I><SUB>GS</SUB> instead of the subthreshold slope or the body factor itself. The DBT is independent of the threshold voltage variation and advantageous to apply to MOSFETs with strong nonlinearity in the subthreshold slope caused by a nonuniform distribution of traps over the band gap. We applied the DBT to n- and p-MOSFETs with <I>W</I>/<I>L</I> = 5/0.13, 5/0.18, and 2/0.13μm/μm on the same wafer and obtained identical results. Extracted interface trap density ranges <I>D</I><SUB>it</SUB> = 10<SUP>10</SUP>-10<SUP>11</SUP> cm<SUP>-2</SUP>eV<SUP>-1</SUP> with a U-shaped distribution over the band gap.</P>

학술상 : 학술상 (부인종양학)

( Ji Yen Lee ),( Jaeman Bae ),( Sun Joo Lee ),( Ji Yeon Kim ),( Soo Nyung Kim ) 대한산부인과학회 2012 대한산부인과학회 학술대회 Vol.99 No.-

Objective: To identify the risk factors of lymphocele formation in patients with cervical cancer who underwent radical abdominal hysterectomy and pelvic lymph node dissection. Methods: We conducted a retrospective study of 62 patients diagnosed with cervical cancer who underwent radical abdominal hysterectomy, including pelvic lymph node dissection between April 2005 and June 2010. Lymphocele was confirmed by imaging studies such as computed tomography or ultrasonography. Included risk factors were patient`s age, body mass index, surgeon`s experience, tumor histology, stage of cancer, previous surgery, number of retrieved lymph nodes, and radiation therapy. Multiple logistic regression analysis was performed to evaluate the risk factors of lymphocele formation. Results: During median follow-up of 34.5 months (range, 12.9 months), 20 patients (32%) out of 62 had developed lymphocele. Eight patients developed symptomatic lymphocle. Univariate analysis showed the radiation therapy, and the number of retrieved lymph nodes as significant risk factors of lymphocele formation. When applying mutivariate analysis using logistic regression, radiation therapy (odds ratio=5.19, P =0.010) and the number of retrieved lymph node (odds ratio=4.80, P =0.021) were independent risk factors of lymphocele formation. Conclusion: Radiation therapy and the number of retrieved lymph node were significant risk factors of lymphocele formation in patients with cervical cancer who underwent radical abdominal hysterectomy and pelvic lymph node dissection.